Inventor
Robert B. Davies
Inventor
Tempe, AZ, US
Overview
Patents· 121 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
F41AFunctional features or details common to both smallarms and ordnance, e.g. cannons8%
F41CSmallarms, e.g. pistols, rifles7%
H03KPulse technique6%
H03FAmplifiers4%
G05FSystems for regulating electric or magnetic variables3%
G11CStatic stores3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,436,549Rifle handguard system20199,865,590'Power semiconductor device and method therefor'20189,799,627'Semiconductor package structure and method'20179,322,609'Rifle'20169,177,866'Power semiconductor device and method therefor'20159,093,300'Transistor structure having a trench drain'20159,029,946'Power semiconductor device and method therefor'2015RE045185'Rifle handguard system with integrated barrel nut'20148,707,850'Rifle'20148,697,556'Transistor structure having a trench drain'20148,530,963'Power semiconductor device and method therefor'20138,471,378'Power semiconductor device and method therefor'20138,297,175'Rifle handguard'20128,230,634'Two piece upper receiver for firearms'20128,216,925'Transistor structure having a trench drain'20128,076,724'Transistor structure having an active region and a dielectric platform region'20118,037,806'Rifle'20118,022,485'Transistor structure having reduced input capacitance'20118,008,719'Transistor structure having dual shield layers'20118,008,720'Transistor structure having a conductive layer formed contiguous in a single deposition'20117,999,250'Silicon-germanium-carbon semiconductor structure'20117,963,203'Rifle'20117,905,041'Stabilized rifle barrel and rifle'20117,898,057'Radio frequency power semiconductor device package comprising dielectric platform and shielding plate'20117,847,350'Transistor structure having a trench drain'20107,847,369'Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure'20107,832,323'Firearm suppressor'20107,827,722'Rifle'20107,821,063'Semiconductor device having enhanced performance and method'2010RE041581'Monolithic low dielectric constant platform for passive components and method'20107,656,003'Electrical stress protection apparatus and method of manufacture'20107,598,588'Semiconductor structure and method of manufacture'20097,584,567'Hand guard assembly for firearms'20097,464,496'Heat exchanger barrel nut'20087,452,796'Semi-conductor device with inductive component and method of making'20087,397,084'Semiconductor device having enhanced performance and method'20087,363,741'Hand guard assembly for firearms'20087,213,498'Rifle'20077,202,152'Semiconductor device with inductive component and method of making'20077,148,553'Semiconductor device with inductive component and method of making'20067,078,784'Semiconductor device with inductive component and method of making'20066,939,788'Semiconductor device with inductive component and method of making'20056,848,351'Rifle'20056,759,746'Die attachment and method'20046,722,254'Muzzle brake'20046,694,660'Rifle handguard system with integrated barrel nut'20046,617,686'Semiconductor device and method of isolating circuit regions'20036,617,252'Monolithic low dielectric constant platform for passive components and method'20036,512,283'Monolithic low dielectric constant platform for passive components and method'20036,308,609'Suppressor'20016,307,247'Monolithic low dielectric constant platform for passive components and method'20016,257,147'Frangible shotshell'20016,197,640'Semiconductor component and method of manufacture'20016,153,905'Semiconductor component including MOSFET with asymmetric gate electrode where the drain electrode over portions of the lightly doped diffusion region without a gate dielectric'20006,118,171'Semiconductor device having a pedestal structure and method of making'20006,084,269'Semiconductor device and method of making'20006,051,456'Semiconductor component and method of manufacture'20006,033,231'Semiconductor device having a pedestal and method of forming'20005,927,993'Backside processing method'19995,920,102'Semiconductor device having a decoupling capacitor and method of making'19995,920,095'Short channel field effect semiconductor device and method of making'19995,886,921'Static random access memory cell having graded channel metal oxide semiconductor transistors and method of operation'19995,879,999'Method of manufacturing an insulated gate semiconductor device having a spacer extension'19995,818,098'Semiconductor device having a pedestal'19985,811,341'Differential amplifier having unilateral field effect transistors and process of fabricating'19985,808,362'Interconnect structure and method of forming'19985,716,866'Method of forming a semiconductor device'19985,714,393'Diode-connected semiconductor device and method of manufacture'19985,712,501'Graded-channel semiconductor device'19985,661,048'Method of making an insulated gate semiconductor device'19975,612,244'Insulated gate semiconductor device having a cavity under a portion of a gate structure and method of manufacture'19975,563,437'Semiconductor device having a large sense voltage'19965,541,132'Insulated gate semiconductor device and method of manufacture'19965,510,648'Insulated gate semiconductor device and method of fabricating'19965,451,806'Method and device for sensing a surface temperature of an insulated gate semiconductor device'19955,449,628'Method of making semiconductor device having a short gate length'19955,424,897'Three leaded protected power device having voltage input'19955,418,674'Multi-lead protected power device having current and boot-strap inputs'19955,384,273'Method of making a semiconductor device having a short gate length'19955,372,960'Method of fabricating an insulated gate semiconductor device'19945,289,028'High power semiconductor device with integral on-state voltage detection structure'19945,285,346'Current driven control circuit for a power device'19945,281,839'Semiconductor device having a short gate length'19945,254,491'Method of making a semiconductor device having improved frequency response'19935,252,848'Low on resistance field effect transistor'19935,235,215'Memory device for use in power control circuits'19935,198,701'Current source with adjustable temperature variation'19935,178,370'Conductivity modulated insulated gate semiconductor device'19935,170,312'Protection circuit on a lead of a power device'19925,155,052'Vertical field effect transistor with improved control of low resistivity region geometry'19925,155,563'Semiconductor device having low source inductance'19925,103,148'Low voltage circuit to control high voltage transistor'19925,077,594'Integrated high voltage transistors having minimum transistor to transistor crosstalk'19915,075,739'High voltage planar edge termination using a punch-through retarding implant and floating field plates'19915,032,878'High voltage planar edge termination using a punch-through retarding implant'19915,029,295'Bandgap voltage reference using a power supply independent current source'19915,008,736'Thermal protection method for a power device'19915,006,736'Control circuit for rapid gate discharge'19914,967,336'High voltage bridge interface'19904,960,723'Process for making a self aligned vertical field effect transistor having an improved source contact'19904,871,686'Integrated Schottky diode and transistor'19894,554,464'Propagation delay generator'19854,533,844'Peak storage amplifier'19854,521,799'Crossunder within an active device'19854,514,648'Current sense circuit for a bubble memory voltage booster'19854,513,306'Current ratioing device structure'19854,504,928'Current ramp generator'19854,485,352'Current amplifier'19844,485,319'Bubble memory sense amplifier'19844,476,429'High voltage bubble memory pulse generator output stage'19844,461,989'Voltage sense circuit for a bubble memory voltage booster'19844,441,070'Voltage regulator circuit with supply voltage ripple rejection to transient spikes'19844,435,678'Low voltage precision current source'19844,433,302'Amplifier with independent quiescent output voltage control'19844,429,270'Switched current source for sourcing current to and sinking current from an output node'19844,413,226'Voltage regulator circuit'19834,306,246'Method for trimming active semiconductor devices'19814,274,018'Saturation limited bias circuit for complementary transistors'19814,245,231'Combination capacitor and transistor structure for use in monolithic circuits'19814,227,157'Frequency compensated high frequency amplifiers'19804,021,701'Transistor protection circuit'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–2000Patents assigned to MOTOROLA INC (66)· patent assignee history
1977–2018Based in Tempe, AZ, US· patent location history
1992–2011Patents assigned to DAVIES ROBERT B (15)· patent assignee history
2009–2012Patents assigned to HVVI SEMICONDUCTORS INC (11)· patent assignee history
2010–2014Patents assigned to DAVIES ROBERT BRUCE (10)· patent assignee history
2013–2015Patents assigned to ESTIVATION PROPERTIES LLC (6)· patent assignee history
2016Based in Galveston, TX, US· patent location history
2019Based in San Diego, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 66 | 1977–2000 |
| DAVIES ROBERT Bself | 15 | 1992–2011 |
| HVVI SEMICONDUCTORS INC | 11 | 2009–2012 |
| DAVIES ROBERT BRUCEself | 10 | 2010–2014 |
| ESTIVATION PROPERTIES LLC | 6 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tempe, AZ, US | 119 | 1977–2018 |
| San Diego, California, US | 1 | 2019 |
| Galveston, Texas, US | 1 | 2016 |