Inventor
Takayuki Yano
Inventor
Tokyo, JP
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
F02Dprimary
F02DControlling combustion engines11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G01RMeasuring electric variables9%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%
Y02TClimate change mitigation technologies related to transportation6%
A61LMethods or apparatus for sterilising materials or objects in general3%
A61MDevices for introducing media into, or onto, the body3%
B01DSeparation3%
PatentTitleYear
10,066,316Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot20188,704,543'Test head moving apparatus and electronic component testing apparatus'20148,691,146'Electron beam sterilization method'20148,648,617'Semiconductor device and method of testing semiconductor device'20148,412,444'Engine control apparatus'20138,018,702'Power supply abnormality detection circuit for on-vehicle electronic control device'20117,640,093'Electronic throttle control apparatus'20096,877,471'Engine control device'20056,682,848'Alkaline storage battery and process for the production thereof'20046,617,034'SOI substrate and method for production thereof'20036,224,510'Device for controlling the vehicle to travel at a constant speed'20016,223,719'Device for controlling the amount of the air taken in by an engine'20016,203,945'Nickel hydroxide active material for use in alkaline storage cell and manufacturing method of the same'20016,171,728'Nickel electrode for akaline storage cell and manufacturing method of the same'2001D0420927'IC test-head stand'20005,918,151'Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same'19995,534,446'Process for producing buried insulator layer in semiconductor substrate'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to NIPPON STEEL CORP (3)· patent assignee history
2000–2014Patents assigned to ADVANTEST CORP (2)· patent assignee history
2000–2018Based in Tokyo, JP· patent location history
2001–2013Patents assigned to MITSUBISHI ELECTRIC CORP (6)· patent assignee history
2001–2004Patents assigned to SANYO ELECTRIC CO (3)· patent assignee history
2001–2005Based in Hyogo, JP· patent location history
2001–2004Based in Itano-gun, JP· patent location history
2009–2013Based in Kobe, JP· patent location history
2013–2014Patents assigned to YANO TAKAYUKI (4)· patent assignee history
2014Based in Saitama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 6 | 2001–2013 |
| YANO TAKAYUKIself | 4 | 2013–2014 |
| NIPPON STEEL CORP | 3 | 1996–2003 |
| SANYO ELECTRIC CO | 3 | 2001–2004 |
| ADVANTEST CORP | 2 | 2000–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 3 | 2000–2018 |
| Kobe, JP | 3 | 2009–2013 |
| Hyogo, JP | 3 | 2001–2005 |
| Itano-gun, JP | 3 | 2001–2004 |
| Saitama, JP | 1 | 2014 |