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Inventor

Rajat Sharma

Inventor
Goleta, CA, US

Overview

44→
Patents
2009–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers21%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
B82YSpecific uses or applications of nanostructures11%
H01LSemiconductor devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10DInorganic electric semiconductor devices7%
C30BSingle-crystal growth6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
LOC135%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,816,832Optical phase shifter using fine lithography defined volumetric junctions202010,529,892Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices202010,471,517Cutting tool and cutting tool body with a holding member for holding a coupling screw201910,241,680Methods for estimating cost savings using deduplication and compression in a storage system2019RE047241Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors201910,043,946Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening201810,027,984Methods and systems for efficiently reading a data block from a data seglet with compressed data blocks2018D0803171'Array of triangular semiconductor dies'20179,793,435'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20179,733,854'Dynamic adaptive compression in network storage device'20179,722,398'Optical device structure using GaN substrates for laser applications'20179,531,164'Optical device structure using GaN substrates for laser applications'20169,491,698'Faster cell selection'20169,450,143'Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices'2016D0763806'Triangular semiconductor die'20169,406,843'Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening'2016D0751999'Array of triangular semiconductor dice'20169,231,376'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'2016D0743356'Diamond-shaped semiconductor die'2015D0739363'Array of triangular semiconductor dies'20159,105,806'Polarization direction of optical devices using selected spatial configurations'20159,071,039'Optical device structure using GaN substrates for laser applications'20159,000,466'Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening'2015D0720310'Triangular semiconductor die'20148,791,499'GaN containing optical devices and method with ESD stability'20148,686,466'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20148,643,036'Semiconductor light-emitting device'20148,634,442'Optical device structure using GaN substrates for laser applications'20148,618,560'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20138,494,017'Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods'20138,455,894'Photonic-crystal light emitting diode and method of manufacture'20138,354,679'Microcavity light emitting diode method of manufacture'20138,314,429'Multi color active regions for white light emitting diode'20128,313,964'Singulation method and resulting device of thick gallium and nitrogen containing substrates'20128,299,473'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20128,293,551'Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices'20128,284,810'Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods'20128,252,662'Method and structure for manufacture of light emitting diode devices using bulk GaN'20128,247,886'Polarization direction of optical devices using selected spatial configurations'20128,227,820'Semiconductor light-emitting device'20128,203,159'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20127,858,996'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20107,846,757'Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices'20107,550,395'Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2020Patents assigned to UNIV CALIFORNIA (10)· patent assignee history
2009–2019Based in Goleta, CA, US· patent location history
2012–2019Patents assigned to SORAA INC (24)· patent assignee history
2012–2016Patents assigned to SHARMA RAJAT (19)· patent assignee history
2012–2015Patents assigned to HALL ERIC M (7)· patent assignee history
2012–2013Patents assigned to D EVELYN MARK P (5)· patent assignee history
2014–2018Based in Fremont, CA, US· patent location history
2016–2020Based in Singapore, SG· patent location history
2016–2020Based in San Diego, CA, US· patent location history
2017–2019Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SORAA INC242012–2019
SHARMA RAJATself192012–2016
UNIV CALIFORNIA102009–2020
HALL ERIC M72012–2015
D EVELYN MARK P52012–2013
Locations
LocationPatentsSpan
Goleta, California, US242009–2019
Fremont, California, US112014–2018
Singapore, SG32016–2020
San Jose, California, US32017–2019
San Diego, California, US22016–2020