Inventor
Tadahiro Imada
Inventor
Kawasaki, JP
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01LSemiconductor devices13%
F01NGas-flow silencers or exhaust apparatus for machines or engines in general7%
Y02TClimate change mitigation technologies related to transportation5%
B01DSeparation4%
C09DCoating compositions, e.g. paints, varnishes or lacquers3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
H03FAmplifiers3%
PatentTitleYear
10,876,458Microwave irradiation device, exhaust purification apparatus, automobile and management system202010,850,221Fine particle detector and exhaust gas purification apparatus202010,626,777Exhaust purification device and vehicle202010,603,617Microwave irradiation apparatus and exhaust gas purification apparatus202010,577,992Microwave heating apparatus and exhaust gas purification apparatus202010,576,406Exhaust purification device, internal combustion device, and power generation device202010,526,943Microwave heating apparatus and exhaust gas purification apparatus202010,526,944Filter regeneration device, filter plugging detection device, exhaust gas treatment apparatus, and filter plugging determination method202010,453,948Semiconductor device which comprises transistor and diode201910,301,989Microwave applicator, exhaust gas purifier, heater, and chemical reactor201910,270,406Power amplifier, semiconductor integrated circuit, and method of controlling the power amplifier201910,221,739Particulate filter and exhaust gas purifier201910,108,263Input apparatus including input cancelling circuit20189,647,527'Power supply circuit and power factor correction circuit'20179,608,083'Semiconductor device'20179,564,527'Semiconductor device and manufacturing method of semiconductor device'20179,547,320'Power supply circuit and power supply apparatus'20179,515,063'Compound semiconductor device and manufacturing method of the same'20169,337,326'Compound semiconductor device and method for fabricating the same'20169,312,373'Compound semiconductor device and manufacturing method of the same'20169,240,472'Semiconductor device, PFC circuit, power supply device, and amplifier'20169,190,507'Semiconductor device'20159,166,030'Compound semiconductor device and method for fabricating'20159,099,351'Compound semiconductor device and method of manufacturing the same'20159,082,756'Semiconductor device and power source device'20159,077,336'Transistor control circuit and power supply device'20158,941,093'Compound semiconductor device and manufacturing method thereof'20158,941,116'Semiconductor device and method of manufacturing the same'20158,872,232'Compound semiconductor device and method for manufacturing the same'20148,765,554'Compound semiconductor device and method for manufacturing the same'20148,735,942'Compound semiconductor device and manufacturing method of the same'20148,728,867'Semiconductor device, manufacturing method of semiconductor device, and power source device'20148,716,209'Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device'20148,716,748'Semiconductor device and method of manufacturing the same, and power supply apparatus'20148,618,577'Compound semiconductor device and manufacturing method thereof'20138,492,784'Semiconductor device and method for producing the same, and power supply'20138,449,787'Method for wet etching while forming interconnect trench in insulating film'20138,431,464'Process for producing silicic coating, silicic coating and semiconductor device'20138,404,584'Method of manufacturing semiconductor device'20138,390,099'Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween'20138,198,653'Compound semiconductor device and manufacturing method of the same'20128,164,166'Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device'20128,143,649'Compound semiconductor device and manufacturing method of the same'20128,089,138'Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device'20127,928,536'Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device'20117,830,013'Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof'20107,470,975'Composition for forming insulation film, insulation film for semiconductor device, and fabrication method and semiconductor device thereof'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2020Patents assigned to FUJITSU LTD (44)· patent assignee history
2008–2020Based in Kawasaki, JP· patent location history
2012–2015Patents assigned to IMADA TADAHIRO (17)· patent assignee history
2012–2014Patents assigned to NAKATA YOSHIHIRO (6)· patent assignee history
2012–2014Patents assigned to YOSHIKAWA KOUTA (4)· patent assignee history
2013–2014Patents assigned to KOBAYASHI YASUSHI (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU LTD | 44 | 2008–2020 |
| IMADA TADAHIROself | 17 | 2012–2015 |
| NAKATA YOSHIHIRO | 6 | 2012–2014 |
| YOSHIKAWA KOUTA | 4 | 2012–2014 |
| KOBAYASHI YASUSHI | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 47 | 2008–2020 |