Compound semiconductor device and manufacturing method of the same

A compound semiconductor device, comprising:nan electron transit layer;a compound semiconductor layer formed over the electron transit layer;a source electrode and a drain electrode formed over the compound semiconductor layer,an insulating film formed between the source electrode and the drain electrode and over the compound semiconductor layer;a gate electrode formed over the insulating film; anda schottky electrode,wherein a recess portion is formed inside an area between the source electrode and the drain electrode of the compound semiconductor layer and the insulating film, and at a portion separating from the gate electrode, andwherein the schottky electrode is formed in the recess portion.

A manufacturing method of a compound semiconductor device, comprising:nforming a compound semiconductor layer over an electron transit layer;forming a source electrode and a drain electrode over the compound semiconductor layer;forming an insulating film between the source electrode and the drain electrode and over the compound semiconductor layer;forming a gate electrode over the insulating film;forming a recess portion inside an area between the source electrode and the drain electrode of the compound semiconductor layer and the insulating film, and at a portion separating from the gate electrode; andforming a schottky electrode in the recess portion.