Inventor

Jae-Geun Oh

Inventor
Icheon-si, KR

Overview

29→
Patents
2001–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices24%
H10BElectronic memory devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices10%
H10NElectric solid-state devices not otherwise provided for8%
G11CStatic stores6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G06FElectric digital data processing2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H01GCapacitors1%
PatentTitleYear
9,972,384Electronic device and method for fabricating the same20189,799,704'Electronic device and method for fabricating the same'20179,627,616'Electronic device and method for fabricating the same'20179,418,838'Electronic device and method for fabricating the same'20169,406,871'Magnetoresistive element and method of manufacturing the same'20169,385,304'Magnetic memory and method of manufacturing the same'20169,123,879'Magnetoresistive element and method of manufacturing the same'20159,054,128'Plasma doping method and method for fabricating semiconductor device using the same'20158,354,342'Semiconductor device with side-junction and method for fabricating the same'20138,063,453'Gate in semiconductor device and method of fabricating the same'20117,968,955'Gate in semiconductor device and method of fabricating the same'20117,919,373'Method for doping polysilicon and method for fabricating a dual poly gate using the same'20117,888,245'Plasma doping method and method for fabricating semiconductor device using the same'20117,687,361'Method of fabricating a transistor having a triple channel in a memory device'20107,601,583'Transistor structure of memory device and method for fabricating the same'20097,332,755'Transistor structure of memory device and method for fabricating the same'20087,279,388'Method for manufacturing transistor in semiconductor device'20077,265,039'Method for fabricating semiconductor device with improved refresh time'20077,145,207'Gate structure of semiconductor memory device'20067,112,486'Method for fabricating semiconductor device by using radical oxidation'20067,067,408'Method for releasing stress during semiconductor device fabrication'20067,029,999'Method for fabricating transistor with polymetal gate electrode'20066,939,769'Method for manufacturing a semiconductor device with using double implanting boron and boron difluoride'20056,936,529'Method for fabricating gate-electrode of semiconductor device with use of hard mask'20056,806,133'Method for fabricating semiconductor device with triple well structure'20046,762,086'Method for fabricating semiconductor device with triple well structure'20046,730,583'Method for fabricating semiconductor device'20046,621,390'Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch'20036,300,209'Method of fabricating triple well of semiconductor device using SEG'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2010Based in Kyungki-do, KR· patent location history
2003Based in Seongnam, KR· patent location history
2004–2013Patents assigned to HYNIX SEMICONDUCTOR INC (18)· patent assignee history
2004–2011Based in Ichon-shi, KR· patent location history
2008–2018Based in Icheon-si, KR· patent location history
2013–2015Based in Gyeonggi-do, KR· patent location history
2015–2018Patents assigned to SK HYNIX INC (7)· patent assignee history
2015–2016Patents assigned to KAI TADASHI (3)· patent assignee history
2015–2016Patents assigned to LEE HYUNG SUK (3)· patent assignee history
2015–2016Patents assigned to NAKAYAMA MASAHIKO (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HYNIX SEMICONDUCTOR INC182004–2013
SK HYNIX INC72015–2018
KAI TADASHI32015–2016
LEE HYUNG SUK32015–2016
NAKAYAMA MASAHIKO32015–2016
Locations
LocationPatentsSpan
Icheon-si, KR112008–2018
Ichon-shi, KR82004–2011
Kyungki-do, KR72001–2010
Gyeonggi-do, KR22013–2015
Seongnam, KR12003