Inventor
Rempei Nakata
Inventor
Kamakura, JP
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
C23CCoating metallic material6%
B05BSpraying apparatus5%
B05CApparatus for applying fluent materials to surfaces, in general5%
B24BMachines, devices, or processes for grinding or polishing5%
C01BNon-metallic elements5%
H10DInorganic electric semiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C09DCoating compositions, e.g. paints, varnishes or lacquers2%
PatentTitleYear
9,698,034'Substrate storage container and substrate storage container mounting table'20179,659,800'Substrate storage container and substrate storage container mounting table'20178,071,157'Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus'20117,799,368'Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus'20107,785,984'Manufacturing method for semiconductor device'20107,604,832'Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus'20097,534,717'Method of manufacturing semiconductor device'20097,446,061'Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program'20087,312,018'Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus'20077,094,681'Semiconductor device fabrication method'20067,052,971'Method for manufacturing semiconductor device'20066,962,870'Method of manufacturing semiconductor device and semiconductor device'20056,938,638'Gas circulating-processing apparatus'20056,828,684'Semiconductor device and method of manufacturing the same'20046,800,569'Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus'20046,784,092'Method of forming insulating film and method of manufacturing semiconductor device'20046,746,969'Method of manufacturing semiconductor device'20046,703,302'Method of making a low dielectric insulation layer'20046,645,881'Method of forming coating film, method of manufacturing semiconductor device and coating solution'20036,566,261'Semiconductor device and method of manufacturing the same'20036,558,747'Method of forming insulating film and process for producing semiconductor device'20036,534,870'Apparatus and method for manufacturing a semiconductor device'20036,458,713'Method for manufacturing semiconductor device'20026,436,849'Method for manufacturing semiconductor device having low dielectric constant insulating film, wafer processing equipment and wafer storing box used in this method'20026,419,557'Polishing method and polisher used in the method'20026,224,464'Polishing method and polisher used in the method'20016,096,631'Method of manufacturing semiconductor device'20006,059,920'Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method'20005,792,326'Method and apparatus for generating ozone and methods of its use'19985,794,114'Ozonizer'19985,775,980'Polishing method and polishing apparatus'19985,702,673'Ozone generating apparatus'19975,664,989'Polishing pad, polishing apparatus and polishing method'19975,641,581'Semiconductor device'19975,632,868'Method and apparatus for generating ozone and methods of its use'19975,620,925'Method of manufacturing semiconductor device using a hagolen plasma treatment step'19975,607,718'Polishing method and polishing apparatus'19975,429,995'Method of manufacturing silicon oxide film containing fluorine'19955,119,761'Substrate heating apparatus for forming thin films on substrate surface'19925,071,789'Method for forming a metal electrical connector to a surface of a semiconductor device adjacent a sidewall of insulation material with metal creep-up extending up that sidewall, and related device'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2017Patents assigned to TOSHIBA KK (35)· patent assignee history
1991–1997Based in Tokyo, JP· patent location history
1995–1998Based in Kawasaki, JP· patent location history
1997–2000Patents assigned to EBARA CORP (4)· patent assignee history
1997–2011Based in Kamakura, JP· patent location history
1997–2017Based in Kanagawa, JP· patent location history
2003Patents assigned to JSR CORP (2)· patent assignee history
2003Based in Iwase-gun, JP· patent location history
2011Patents assigned to EMA TATSUHIKO (1)· patent assignee history
2011Patents assigned to HAYASAKI KEI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 35 | 1991–2017 |
| EBARA CORP | 4 | 1997–2000 |
| JSR CORP | 2 | 2003 |
| EMA TATSUHIKO | 1 | 2011 |
| HAYASAKI KEI | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kamakura, JP | 25 | 1997–2011 |
| Kanagawa, JP | 7 | 1997–2017 |
| Kawasaki, JP | 4 | 1995–1998 |
| Tokyo, JP | 3 | 1991–1997 |
| Iwase-gun, JP | 1 | 2003 |