Inventor
Masaru Kito
Inventor
Yokohama, JP
Overview
Patents· 191 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices37%
H10DInorganic electric semiconductor devices28%
G11CStatic stores13%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10NElectric solid-state devices not otherwise provided for1%
A47KSanitary equipment0%
E03CDomestic plumbing installations for fresh water or waste water0%
G07GRegistering the receipt of cash, valuables, or tokens0%
PatentTitleYear
RE048191Nonvolatile semiconductor memory device and method for driving same202010,658,383Nonvolatile semiconductor memory device and method for manufacturing same202010,622,303Semiconductor device having a stacked body including a first stacked portion and a second stacked portion2020RE047815Nonvolatile semiconductor memory device202010,438,970Semiconductor memory device201910,418,378Nonvolatile semiconductor memory device and method for manufacturing same201910,347,648Nonvolatile semiconductor storage device201910,304,849Semiconductor memory device201910,211,219Nonvolatile semiconductor memory device and manufacturing method thereof201910,163,931Non-volatile semiconductor storage device and method of manufacturing the same201810,141,327Semiconductor memory device201810,121,796Semiconductor memory device2018RE046957Nonvolatile semiconductor memory device201810,020,320Semiconductor device and method for manufacturing same201810,008,510Semiconductor memory device20189,991,276Semiconductor device20189,985,050Non-volatile semiconductor storage device and method of manufacturing the same2018RE046809Nonvolatile semiconductor memory device20189,941,296Nonvolatile semiconductor memory device and method for manufacturing same2018RE046785Nonvolatile semiconductor memory device and method for driving same20189,935,121Three dimensional vertical channel semiconductor memory device20189,929,176'Non-volatile storage device and method of manufacturing the same'20189,917,095'Nonvolatile semiconductor storage device'20189,893,079'Semiconductor memory device'20189,748,260'Nonvolatile semiconductor memory device and manufacturing method thereof'20179,741,738'Non-volatile semiconductor storage device and method of manufacturing the same'20179,711,526'Semiconductor memory device'20179,711,515'Method of manufacturing semiconductor memory device'20179,704,801'Semiconductor memory device'20179,666,595'Semiconductor memory device and method of manufacturing the same'20179,613,976'Three-dimensional semiconductor memory device'20179,601,503'Nonvolatile semiconductor memory device and method for manufacturing same'20179,583,504'Non-volatile storage device and method of manufacturing the same'20179,496,278'Nonvolatile semiconductor storage device'20169,437,307'Nonvolatile semiconductor memory device'20169,373,634'Method for manufacturing semiconductor device and semiconductor device'20169,356,042'Non-volatile semiconductor storage device and method of manufacturing the same'20169,318,503'Nonvolatile semiconductor memory device and method for manufacturing same'2016RE045972'Nonvolatile semiconductor memory device'20169,312,134'Nonvolatile semiconductor memory device and method for manufacturing same'2016RE045840'Nonvolatile semiconductor memory device and method for driving same'20169,224,875'Nonvolatile semiconductor storage device'20159,190,499'Nonvolatile semiconductor memory device, capacitance element, and method for manufacturing nonvolatile semiconductor memory device'20159,147,575'Nonvolatile semiconductor memory device and method for manufacturing same'20159,111,964'Nonvolatile semiconductor memory device and method for manufacturing same'20159,064,735'Nonvolatile semiconductor memory device and manufacturing method thereof'20159,064,975'Shift register memory and method of manufacturing the same'20159,064,969'Nonvolatile semiconductor memory device and method of fabricating the same'20159,054,132'Method for manufacturing semiconductor device and semiconductor device'20159,041,093'Semiconductor memory device and manufacturing method thereof'20159,035,374'Non-volatile semiconductor storage device and method of manufacturing the same'20159,029,934'Nonvolatile semiconductor memory device including floating gate electrodes formed between control gate electrodes and vertically formed along a semiconductor pillar'20159,025,377'Method of operating semiconductor memory device'20158,969,945'Nonvolatile semiconductor memory device'20158,963,230'Semiconductor storage device and manufacturing method of semiconductor storage device'20158,963,232'Nonvolatile semiconductor storage device'20158,916,921'Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner'20148,884,355'Nonvolatile semiconductor memory device and method for manufacturing same'20148,873,296'Nonvolatile semiconductor memory device'20148,848,440'Nonvolatile semiconductor memory device'20148,847,303'Semiconductor device and method for manufacturing the same'20148,830,757'Method for operating nonvolatile semiconductor memory device'20148,791,464'Nonvolatile semiconductor memory device and method for manufacturing same'20148,786,008'Nonvolatile semiconductor memory device and method for manufacturing the same'20148,767,452'Semiconductor memory device'20148,766,351'Semiconductor storage device and manufacturing method of semiconductor storage device'20148,759,897'Nonvolatile semiconductor memory device'20148,760,924'Nonvolatile semiconductor memory device and method of data write therein'20148,754,459'Semiconductor memory device'20148,748,971'Three dimensional nonvolatile semiconductor memory having pillars provided inside an oblate through hole'20148,728,919'Non-volatile semiconductor storage device and method of manufacturing the same'20148,729,624'Non-volatile semiconductor storage device and method of manufacturing the same'20148,692,312'Semiconductor memory device and method of manufacturing the same'20148,674,430'Nonvolatile semiconductor storage device'20148,669,608'Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device'20148,659,070'Semiconductor memory device and manufacturing method thereof'20148,653,582'Nonvolatile semiconductor memory device and method for manufacturing same'20148,653,577'Nonvolatile semiconductor memory device'20148,654,586'Nonvolatile semiconductor memory device'20148,605,508'Non-volatile semiconductor storage device having control circuit to control voltages to select transistor for erase operation'20138,598,643'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,575,681'Semiconductor memory device and method for manufacturing same'20138,569,133'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,559,221'Nonvolatile semiconductor memory device and method for driving same'20138,551,838'Nonvolatile semicondutor memory device and manufacturing method thereof'20138,541,866'Nonvolatile semiconductor memory device and method for manufacturing same'20138,514,627'Nonvolatile semiconductor memory device'20138,507,972'Nonvolatile semiconductor memory device'20138,476,708'Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration'20138,440,528'Method for manufacturing a vertical nonvolatile semiconductor memory device including forming floating gates within the recesses created on the interlayer insulating films'20138,436,414'Non-volatile semiconductor stacked memory device having two semiconductor pillars in a through hole and method for manufacturing same'20138,436,415'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,426,276'Non-volatile semiconductor storage device and method of manufacturing the same'20138,426,976'Non-volatile semiconductor storage device and method of manufacturing the same'20138,410,538'Semiconductor memory device and method for manufacturing same'20138,400,842'Nonvolatile semiconductor memory device and method for driving the same'20138,378,406'Multilayer stacked type nonvolatile semiconductor memory device'20138,374,033'Nonvolatile semiconductor memory device'20138,372,720'Non-volatile semiconductor storage device and method of manufacturing the same'20138,363,481'Non-volatile semiconductor memory device and method of making the same'20138,361,862'Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device'20138,350,314'Semiconductor memory device and method for fabricating semiconductor memory device'20138,350,326'Nonvolatile semiconductor memory device'20138,351,277'Method for operating semiconductor memory device'20138,338,882'Semiconductor memory device and method for manufacturing same'20128,338,876'Non-volatile semiconductor storage device and method of manufacturing the same'20128,334,561'Nonvolatile semiconductor memory device and method of manufacturing the same'20128,334,551'Non-volatile semiconductor storage device'20128,330,216'Non-volatile semiconductor memory device and method of manufacturing the same'20128,320,182'Nonvolatile semiconductor memory device'20128,318,602'Nonvolatile semiconductor storage apparatus and method for manufacturing the same'20128,294,191'Multi-layer memory device including vertical and U-shape charge storage regions'20128,293,601'Method of manufacturing a non-volatile semiconductor storage device'20128,289,766'Nonvolatile semiconductor memory device and method for driving same'20128,278,695'Nonvolatile semiconductor memory device and manufacturing method thereof'20128,274,108'Nonvolatile semiconductor memory device and method for manufacturing the same'20128,264,031'Nonvolatile semiconductor memory device and method for manufacturing same'20128,253,187'Non-volatile semiconductor storage device and method of manufacturing the same'20128,247,863'Nonvolatile semiconductor memory device and method of manufacturing the same'20128,237,211'Non-volatile semiconductor storage device and method of manufacturing the same'20128,217,446'Nonvolatile semiconductor memory device and method of manufacturing the same'20128,218,358'Nonvolatile semiconductor memory device and method for driving same'20128,203,884'Nonvolatile semiconductor memory device'20128,198,667'Semiconductor memory device and method for manufacturing same'20128,199,573'Nonvolatile semiconductor memory device'20128,194,467'Nonvolatile semiconductor memory device'20128,193,571'Stacked type nonvolatile semiconductor memory device and method of manufacturing same'20128,189,391'Non-volatile semiconductor storage device including a control circuit'20128,189,371'Nonvolatile semiconductor memory device and method for driving same'20128,188,530'Nonvolatile semiconductor memory device and method for manufacturing same'20128,178,919'Nonvolatile semiconductor memory device and method for manufacturing same'20128,178,917'Non-volatile semiconductor storage device having memory cells disposed three-dimensionally, and method of manufacturing the same'20128,169,826'Nonvolatile semiconductor memory device'20128,154,068'Non-volatile semiconductor storage device and method of manufacturing the same'20128,154,103'Semiconductor device'20128,148,769'Nonvolatile semiconductor memory device and method of manufacturing the same'20128,148,789'Non-volatile semiconductor storage device and method of manufacturing the same'20128,138,489'Non-volatile semiconductor storage device and method of manufacturing the same'20128,120,961'Nonvolatile semiconductor memory device'20128,089,120'Semiconductor memory device'20128,089,121'Nonvolatile semiconductor memory device and method of manufacturing the same'20128,084,807'Nonvolatile semiconductor memory device and method for manufacturing same'20118,048,798'Method for manufacturing a nonvolatile semiconductor storage device where memory cells are arranged three dimensionally'20118,017,993'Nonvolatile semiconductor memory device and method for manufacturing same'20118,013,383'Nonvolatile semiconductor storage device including a plurality of memory strings'20118,008,710'Non-volatile semiconductor storage device'20117,982,261'Nonvolatile semiconductor memory device and method for manufacturing same'20117,977,748'Semiconductor device and manufacturing method thereof'20117,969,789'Method for driving nonvolatile semiconductor memory device'20117,952,136'Nonvolatile semiconductor storage apparatus and method for manufacturing the same'20117,936,004'Nonvolatile semiconductor memory device and manufacturing method thereof'20117,927,926'Non-volatile semiconductor storage device and method of manufacturing the same'20117,910,432'Non-volatile semiconductor storage device and method of manufacturing the same'20117,910,914'Semiconductor memory and method for manufacturing the same'20117,902,591'Non-volatile semiconductor storage device'20117,868,315'Semiconductor memory device and method of manufacturing the same'20117,868,416'Semiconductor device'20117,859,066'Nonvolatile semiconductor memory device and method of manufacturing the same'20107,847,342'Non-volatile semiconductor storage device and method of manufacturing the same'20107,847,334'Non-volatile semiconductor storage device and method of manufacturing the same'20107,838,996'Semiconductor device'20107,821,058'Nonvolatile semiconductor memory and method for manufacturing the same'20107,812,396'Semiconductor device with channel layer comprising different types of impurities'20107,813,203'Semiconductor memory device and method of manufacturing of the same'20107,795,092'Semiconductor device and manufacturing method thereof'20107,768,063'Semiconductor device and method of manufacturing the same'20107,755,134'Nonvolatile semiconductor memory device'20107,749,851'Semiconductor device and method for fabricating semiconductor device'20107,737,041'Semiconductor device and method of manufacturing the same'20107,732,891'Semiconductor device'20107,558,141'Memory system, semiconductor memory device and method of driving same'20097,539,056'Nonvolatile semiconductor memory'20097,459,741'Semiconductor memory device'20087,391,068'Semiconductor device'20087,276,750'Semiconductor device having trench capacitor and fabrication method for the same'20077,151,290'Semiconductor memory device and method of manufacturing the same'20067,145,197'Semiconductor device and method of manufacturing the same'20067,135,368'Semiconductor memory device with surface strap and method of fabricating the same'20067,122,429'Semiconductor memory and method of manufacturing the same'20067,122,855'Semiconductor memory device and method of manufacturing the same'20067,118,956'Trench capacitor and a method for manufacturing the same'20067,091,546'Semiconductor memory with trench capacitor and method of fabricating the same'20067,084,450'Semiconductor memory device and method of manufacturing the same'20066,930,342'Semiconductor memory and method of manufacturing the same'20056,917,064'Trench capacitor and a method for manufacturing the same'20056,867,450'Semiconductor memory device with surface strap and method of fabricating the same'20056,557,765'Data processing terminal'20036,237,850'Bar code reader and method of reading bar code'20015,901,329'Data processing terminal which determines a type of an external device'19995,705,910'Electric charge/discharge control device and electric charge/discharge control method in a system using the same device'19985,414,234'Stud welding method'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2003Based in Kawasaki, JP· patent location history
2005–2019Patents assigned to TOSHIBA KK (161)· patent assignee history
2005–2020Based in Yokohama, JP· patent location history
2005–2020Based in Kanagawa, JP· patent location history
2011–2015Patents assigned to KITO MASARU (83)· patent assignee history
2011–2015Patents assigned to AOCHI HIDEAKI (67)· patent assignee history
2011–2015Patents assigned to KATSUMATA RYOTA (61)· patent assignee history
2011–2015Patents assigned to FUKUZUMI YOSHIAKI (58)· patent assignee history
2013–2020Based in Kuwana, JP· patent location history
2013–2017Based in Mie, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 161 | 2005–2019 |
| KITO MASARUself | 83 | 2011–2015 |
| AOCHI HIDEAKI | 67 | 2011–2015 |
| KATSUMATA RYOTA | 61 | 2011–2015 |
| FUKUZUMI YOSHIAKI | 58 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 79 | 2005–2020 |
| Kanagawa, JP | 61 | 2005–2020 |
| Kuwana, JP | 31 | 2013–2020 |
| Mie, JP | 13 | 2013–2017 |
| Kawasaki, JP | 4 | 1998–2003 |