LexDanaLexDanabeta
Inventor

Aiko Shiga

Inventor
Atsugi, JP

Overview

40→
Patents
2004–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 40 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10DInorganic electric semiconductor devices26%
B23KSoldering or unsoldering13%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10KOrganic electric solid-state devices3%
H01LSemiconductor devices2%
PatentTitleYear
10,910,219Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device202110,366,885Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device20199,748,099'Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device'20178,696,808'Laser irradiation apparatus'20148,686,315'Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device'20148,198,173'Method for manufacturing SOI substrate'20128,093,593'Semiconductor device having multichannel transistor'20128,044,372'Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment'20117,943,885'Laser irradiation method and method of manufacturing semiconductor device'20117,892,952'Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment'20117,829,432'Method for manufacturing SOI substrate'20107,736,917'Laser beam irradiation method and method of manufacturing a thin firm transistor'20107,670,935'Manufacturing method of semiconductor device'20107,635,883'Method for manufacturing semiconductor device'20097,589,032'Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment'20097,510,920'Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film'20097,439,115'Semiconductor fabricating apparatus'20087,319,055'Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam'20087,279,372'Manufacturing method of semiconductor device'20077,241,708'Laser irradiation method that includes moving a center of rotation along a straight line in order to enhance the crystallinity of the semiconductor film'20077,217,952'Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus'20077,176,042'Laser beam irradiation method that includes determining a thickness of semiconductor prior to crystallizing'20077,138,306'Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device'20067,135,389'Irradiation method of laser beam'20067,129,121'Method for manufacturing semiconductor device'20067,109,069'Semiconductor device and method of manufacturing the same'20067,105,048'Laser irradiation apparatus'20067,087,504'Method of manufacturing a semiconductor device by irradiating with a laser beam'20067,050,878'Semiconductror fabricating apparatus'20067,037,809'Method of manufacturing semiconductor device using a laser irradiation process'20067,015,079'Semiconductor film, semiconductor device, and method of manufacturing the same including adding metallic element to the amorphous semiconductor film and introducing oxygen after crystallization'20066,979,605'Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light'20056,962,860'Method of manufacturing a semiconductor device'20056,911,358'Method for manufacturing semiconductor device'20056,844,523'Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment'20056,797,550'Semiconductor device and manufacturing method therefor'20046,777,713'Irregular semiconductor film, having ridges of convex portion'20046,767,799'Laser beam irradiation method'20046,764,886'Manufacturing method of semiconductor device'20046,700,096'LASER APPARATUS, LASER IRRADIATION METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION SYSTEM FOR SEMICONDUCTOR DEVICE USING THE LASER APPARATUS, AND ELECTRONIC EQUIPMENT'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (36)· patent assignee history
2004–2007Patents assigned to SHARP KK (4)· patent assignee history
2004–2021Based in Atsugi, JP· patent location history
2004–2014Based in Kanagawa, JP· patent location history
2007–2010Based in Shibuya, JP· patent location history
2012–2014Patents assigned to SHIGA AIKO (4)· patent assignee history
2012–2014Patents assigned to TANAKA KOICHIRO (3)· patent assignee history
2012–2014Patents assigned to MIYAIRI HIDEKAZU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR ENERGY LAB362004–2021
SHARP KK42004–2007
SHIGA AIKOself42012–2014
TANAKA KOICHIRO32012–2014
MIYAIRI HIDEKAZU22012–2014
Locations
LocationPatentsSpan
Atsugi, JP202004–2021
Kanagawa, JP182004–2014
Shibuya, JP22007–2010