Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

Claims

10 · 1 independent · depth 2

10 granted claims

›1.independentA method of manufacturing a semiconductor device comprising:nirradiating a semiconductor film formed on an insulating surface with a laser light while…+9

›2.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser light is outputted from a laser oscillator and is processed …d2

›3.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser light irradiation position where the certain region and the …d2

›4.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser oscillator is a continuous wave solid-state laser.d2

›5.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser oscillator is one or plural kinds selected from the group co…d2

›6.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser oscillator is one or plural kinds selected from the group co…d2

›7.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the laser light is second harmonic.d2

›8.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the speed of moving the center of the rotation is kept constant.d2

›9.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein the angular velocity of the rotation is increased as the distance betw…d2

›10.↳ 1A method of manufacturing a semiconductor device as claimed in claim 1,nwherein an incident angle Î¦ of the laser light with respect to a plane formed…d2

Classifications

5 codes

IPC · International Patent Classification

Section H — Electricity

H01L21/26

USPC · US Patent Classification

438/795438/487438/973257/E21.328

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Pendency

4.8 y

1,765 days filing → grant

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4 RCE

Examiner

Stanetta Isaac

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Citations: 28 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20030089690 A1	15 May 2003

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