LexDanaLexDanabeta
Inventor

Ichiro Mizushima

Inventor
Yokohama, JP

Overview

104→
Patents
1995–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 104 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10BElectronic memory devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H01LSemiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
C23CCoating metallic material2%
H10NElectric solid-state devices not otherwise provided for2%
B82YSpecific uses or applications of nanostructures2%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
10,784,165Semiconductor device and dicing method202010,741,443Method for manufacturing a semiconductor device202010,325,805Method for manufacturing a semiconductor device20199,437,476'Method of manufacturing semiconductor device including air gap between patterns'20169,412,937'Memory device'20169,257,552'Semiconductor device and method of manufacturing same'20169,202,845'Memory device having a stacked variable resistance layer'20159,093,274'Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases'20158,963,124'Semiconductor device including a plurality of different functional elements and method of manufacturing the same'20158,772,153'Semiconductor device with air gap therein and manufacturing method thereof'20148,742,592'Semiconductor device including a plug and method for manufacturing the same'20148,742,391'Non-volatile semiconductor memory'20148,673,786'Method for manufacturing microstructure using self-assembly of amphiphilic polymer'20148,648,464'Semiconductor device and manufacturing method thereof'20148,637,915'Nonvolatile semiconductor memory'20148,624,316'Nonvolatile semiconductor memory device and method of fabricating the same'20148,558,354'Semiconductor device and method for manufacturing the same'20138,551,871'Method of fabricating semiconductor device'20138,536,699'Semiconductor device manufacturing method and semiconductor device manufacturing apparatus'20138,530,957'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,476,708'Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration'20138,455,346'Method for manufacturing nonvolatile memory device'20138,415,242'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,324,679'Nonvolatile semiconductor memory'20128,269,267'Nonvolatile semiconductor memory'20128,114,755'Method of manufacturing semiconductor device'20128,071,483'Semiconductor device manufacturing method and semiconductor device manufacturing apparatus'20118,043,945'Method of fabricating semiconductor device'20118,017,989'Nonvolatile semiconductor memory device and method of manufacturing the same'20118,012,858'Method of fabricating semiconductor device'20117,989,856'Fin transistor'20117,986,013'Semiconductor device having SiGe semiconductor regions'20117,982,259'Nonvolatile semiconductor memory'20117,888,730'Nonvolatile semiconductor memory'20117,879,658'Semiconductor device and method for manufacturing the same'20117,863,166'Method of manufacturing semiconductor storage device'20117,842,564'Semiconductor memory device manufacturing method and semiconductor memory device'20107,829,948'Nonvolatile semiconductor memory'20107,772,671'Semiconductor device having an element isolating insulating film'20107,718,483'Method of manufacturing non-volatile semiconductor memory'20107,651,930'Method of manufacturing semiconductor storage device'20107,602,013'Semiconductor device with recessed channel'20097,537,978'Semiconductor device and manufacturing method thereof'20097,525,154'Semiconductor substrate, manufacturing method therefor, and semiconductor device'20097,521,263'Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device'20097,521,300'Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate'20097,510,945'Element formation substrate, method of manufacturing the same, and semiconductor device'20097,507,634'Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment'20097,459,748'Semiconductor memory device'20087,420,249'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20087,372,086'Semiconductor device including MOSFET and isolation region for isolating the MOSFET'20087,358,198'Semiconductor device and method for fabricating same'20087,294,562'Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same'20077,285,825'Element formation substrate for forming semiconductor device'20077,265,017'Method for manufacturing partial SOI substrates'20077,235,456'Method of making empty space in silicon'20077,208,353'Semiconductor device and manufacturing method thereof'20077,187,035'Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate'20077,160,818'Semiconductor device and method for fabricating same'20077,148,543'Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions'20067,145,215'Semiconductor device with a cavity therein and a method of manufacturing the same'20067,129,125'Semiconductor device and manufacturing method thereof including heating a silicon oxide in a helium gas'20067,126,178'Semiconductor device and its manufacturing method'20067,122,864'Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same'20067,071,039'Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof'20067,019,365'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20067,018,904'Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same'20067,019,364'Semiconductor substrate having pillars within a closed empty space'20067,009,273'Semiconductor device with a cavity therein and a method of manufacturing the same'20066,989,316'Semiconductor device and method for manufacturing'20066,982,198'Semiconductor device and its manufacturing method'20066,979,846'Semiconductor device and manufacturing method thereof'20056,956,265'Semiconductor device and method for manufacturing partial SOI substrates'20056,946,699'Semiconductor device and its manufacturing method'20056,927,139'Nonvolatile semiconductor memory and manufacturing method for the same'20056,924,518'Semiconductor device and method of manufacturing the same'20056,906,384'Semiconductor device having one of patterned SOI and SON structure'20056,903,025'Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device'20056,893,928'Semiconductor device and method of manufacturing the same'20056,891,232'Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same'20056,846,750'High precision pattern forming method of manufacturing a semiconductor device'20056,835,981'Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions'20046,794,713'Semiconductor device and method of manufacturing the same including a dual layer raised source and drain'20046,772,045'System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device'20046,744,104'Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same'20046,713,359'Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC'20046,630,714'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20036,617,226'Semiconductor device and method for manufacturing the same'20036,600,189'Semiconductor device and semiconductor device manufacturing method'20036,570,217'Semiconductor device and method of manufacturing the same'20036,552,380'Semiconductor device and manufacturing method thereof'20036,531,754'Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof'20036,395,621'Method of manufacturing a semiconductor device with oxide mediated epitaxial layer'20026,362,511'MIS-type semiconductor device having a multi-portion gate electrode'20026,346,732'Semiconductor device with oxide mediated epitaxial layer'20026,342,421'Semiconductor device and manufacturing method thereof'20026,335,251'Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor'20026,232,641'Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor'20016,207,591'Method and equipment for manufacturing semiconductor device'20016,100,132'Method of deforming a trench by a thermal treatment'20006,018,185'Semiconductor device with element isolation film'20005,864,161'Semiconductor device and manufacturing method thereof'19995,598,025'Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure'19975,413,943'Semiconductor device and method of manufacturing the same'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2020Patents assigned to TOSHIBA KK (101)· patent assignee history
1995–2020Based in Yokohama, JP· patent location history
2001–2004Based in Tokyo, JP· patent location history
2004–2014Based in Kanagawa, JP· patent location history
2011–2015Patents assigned to MIZUSHIMA ICHIRO (17)· patent assignee history
2011–2013Patents assigned to NAKAO TAKASHI (4)· patent assignee history
2012–2014Patents assigned to OZAWA YOSHIO (4)· patent assignee history
2013–2014Patents assigned to MORI SHINJI (4)· patent assignee history
2015–2016Based in Yokkaichi, JP· patent location history
2016–2020Based in Kanazawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK1011995–2020
MIZUSHIMA ICHIROself172011–2015
MORI SHINJI42013–2014
NAKAO TAKASHI42011–2013
OZAWA YOSHIO42012–2014
Locations
LocationPatentsSpan
Yokohama, JP771995–2020
Kanagawa, JP192004–2014
Yokkaichi, JP32015–2016
Kanazawa, JP22016–2020
Tokyo, JP22001–2004