Inventor
Taro Nishiguchi
Inventor
Itami, JP
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices16%
C23CCoating metallic material5%
C03BManufacture, shaping, or supplementary processes3%
LOC133%
Y10TTechnical subjects covered by former us classification3%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
10,770,550Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device202010,741,683Semiconductor device and method for manufacturing same202010,734,222Semiconductor stack202010,612,160Epitaxial wafer and method for manufacturing same202010,580,647Semiconductor stack202010,490,634Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device201910,472,736Epitaxial wafer and method for manufacturing same201910,395,924Semiconductor stack201910,396,163Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device201910,229,836Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device20199,966,249Silicon carbide semiconductor substrate and method for manufacturing same20189,957,641Epitaxial wafer and method for manufacturing same20189,947,782Semiconductor device and method for manufacturing same20189,777,404'Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate'20179,728,628'Silicon carbide semiconductor device and method for manufacturing same'20179,631,296'Method of manufacturing silicon carbide substrate'20179,583,571'Dislocation in SiC semiconductor substrate'20179,450,054'Dislocation in SiC semiconductor substrate'20169,255,344'Silicon carbide substrate and method of manufacturing the same'20169,184,239'Dislocation in SiC semiconductor substrate'20159,090,992'Method of manufacturing single crystal'20159,082,621'Method for manufacturing silicon carbide single crystal, and silicon carbide substrate'20159,057,147'Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate'20158,912,550'Dislocations in SiC semiconductor substrate'20148,642,153'Single crystal silicon carbide substrate and method of manufacturing the same'20148,642,154'Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot'20148,629,457'Light-emitting device'20148,435,866'Method for manufacturing silicon carbide substrate'20138,168,515'Method for manufacturing semiconductor substrate'2012D0655256'Semiconductor substrate'2012D0651991'Semiconductor substrate'2012D0651992'Semiconductor substrate'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (29)· patent assignee history
2012–2018Patents assigned to NISHIGUCHI TARO (12)· patent assignee history
2012–2018Patents assigned to SASAKI MAKOTO (11)· patent assignee history
2012–2018Patents assigned to HARADA SHIN (10)· patent assignee history
2012–2016Patents assigned to FUJIWARA SHINSUKE (9)· patent assignee history
2012–2020Based in Itami, JP· patent location history
2017Based in Osaka, JP· patent location history
2019–2020Based in Hyogo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO ELECTRIC INDUSTRIES | 29 | 2012–2020 |
| NISHIGUCHI TAROself | 12 | 2012–2018 |
| SASAKI MAKOTO | 11 | 2012–2018 |
| HARADA SHIN | 10 | 2012–2018 |
| FUJIWARA SHINSUKE | 9 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Itami, JP | 28 | 2012–2020 |
| Hyogo, JP | 3 | 2019–2020 |
| Osaka, JP | 1 | 2017 |