Dislocation in SiC semiconductor substrate

A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:nan outer circumferential area within 5 mm from an outer circumference; anda central area as an area other than the outer circumferential area, whereinwhen said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector is parallel to direction is at most 1×104 cm−2, whereinin said central area, density of dislocations of which Burgers vector is parallel to the direction is lower than density of dislocations of which Burgers vector includes components in the direction and direction.

A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:nan outer circumferential area within 5 mm from an outer circumference; anda central area as an area other than the outer circumferential area, whereinwhen said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector is parallel to direction, with dislocation line existing in the basal plane and the dislocation line exposed at the main surface of the semiconductor substrate, is at most 1×104 cm−2, whereinin said central area, density of dislocations of which Burgers vector is parallel to the direction is lower than density of dislocations of which Burgers vector includes components in the direction and the direction.

A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:nan outer circumferential area within 5 mm from an outer circumference; anda central area as an area other than the outer circumferential area, whereinwhen said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector includes components parallel to direction and direction is at most 1×104 cm−2.