Inventor

Shimpei Takagi

Inventor

Osaka, JP

Overview

2011–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light43%

B82YSpecific uses or applications of nanostructures35%

G01NInvestigating or analysing materials by determining their chemical or physical properties6%

H10HInorganic light-emitting semiconductor devices having potential barriers6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

B41MPrinting, duplicating, marking, or copying processes2%

C09DCoating compositions, e.g. paints, varnishes or lacquers2%

H01LSemiconductor devices2%

PatentTitleYear

10,407,585Aqueous ink for ink jet recording, aqueous ink set for ink jet recording, and ink jet recording method2019 9,379,521'Group III nitride semiconductor laser device, method for producing group III nitride semiconductor laser device, method for evaluating end facet for optical cavity of group III nitride semiconductor laser device, and method for evaluating scribe groove'2016 9,231,370'Group III nitride semiconductor light emitting device'2016 9,036,671'Method for fabricating group-III nitride semiconductor laser device'2015 8,953,656'III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device'2015 8,929,416'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2015 8,772,064'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'2014 8,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2014 8,642,366'Method for fabricating group-III nitride semiconductor laser device'2014 8,594,145'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2013 8,548,020'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2013 8,507,305'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate'2013 8,420,419'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2013 8,401,048'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'2013 8,389,312'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'2013 8,361,885'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'2013 8,265,113'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'2012 8,213,475'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2012 8,175,129'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'2012 8,139,619'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2012 8,105,857'Method of fabricating group-III nitride semiconductor laser device'2012 8,076,167'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2011 8,071,405'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2016Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (21)· patent assignee history

2011–2016Patents assigned to TAKAGI SHIMPEI (19)· patent assignee history

2011–2016Patents assigned to UENO MASAKI (17)· patent assignee history

2011–2016Patents assigned to YOSHIZUMI YUSUKE (17)· patent assignee history

2011–2014Patents assigned to IKEGAMI TAKATOSHI (15)· patent assignee history

2011–2016Based in Osaka, JP· patent location history

2019Based in Minami-ashigara, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SUMITOMO ELECTRIC INDUSTRIES	21	2011–2016
TAKAGI SHIMPEIself	19	2011–2016
UENO MASAKI	17	2011–2016
YOSHIZUMI YUSUKE	17	2011–2016
IKEGAMI TAKATOSHI	15	2011–2014

Locations

Location	Patents	Span
Osaka, JP	22	2011–2016
Minami-ashigara, JP	1	2019