Inventor
Ryota Sasajima
Inventor
Toyama, JP
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1037%
C23CCoating metallic material32%
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
C30BSingle-crystal growth1%
LOC231%
PatentTitleYear
10,287,680Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,081,868Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium201810,066,294Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201810,036,092Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium20189,966,251Method of manufacturing semiconductor device and substrate processing apparatus20189,966,252Method of manufacturing semiconductor device and substrate processing apparatus20189,881,789'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20189,837,262Method of manufacturing a SiOCN film, substrate processing apparatus and recording medium20179,691,606'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,620,357'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'2017D0783351'Gas nozzle substrate processing apparatus'20179,455,137'Method of manufacturing semiconductor device'20169,431,236'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20169,412,585'Method of manufacturing a SiOCN film, substrate processing apparatus, and recording medium'20169,394,607'Substrate processing apparatus'20169,390,911'Method of manufacturing semiconductor device'20169,378,943'Method of manufacturing semiconductor device, method of processing substrate substrate processing apparatus and non-transitory computer-readable recording medium'20169,340,872'Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and recording medium'20169,263,253'Method of manufacturing a SiOCN film, substrate processing apparatus, and recording medium'20169,218,955'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20159,136,114'Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus'20159,096,928'Method of manufacturing semiconductor device and substrate processing apparatus'20159,039,838'Method of manufacturing semiconductor device and substrate processing apparatus'20158,951,919'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20158,946,092'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'20158,901,014'Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium'20148,728,954'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20148,546,272'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'20138,415,258'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'20138,268,731'Semiconductor device producing method, substrate producing method and substrate processing apparatus'20128,252,701'Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus'20128,076,251'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'20117,901,206'Heat-treating apparatus and method of producing substrates'20117,891,975'Heat treatment apparatus and method of manufacturing substrate'20117,820,118'Substrate processing apparatus having covered thermocouple for enhanced temperature control'20107,625,205'Heat treatment apparatus and method of manufacturing substrates'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2019Patents assigned to HITACHI INT ELECTRIC INC (35)· patent assignee history
2009–2019Based in Toyama, JP· patent location history
2011–2016Patents assigned to SASAJIMA RYOTA (10)· patent assignee history
2011–2016Patents assigned to HIROSE YOSHIRO (9)· patent assignee history
2011–2015Patents assigned to AKAE NAONORI (6)· patent assignee history
2011–2015Patents assigned to OTA YOSUKE (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI INT ELECTRIC INC | 35 | 2009–2019 |
| SASAJIMA RYOTAself | 10 | 2011–2016 |
| HIROSE YOSHIRO | 9 | 2011–2016 |
| AKAE NAONORI | 6 | 2011–2015 |
| OTA YOSUKE | 5 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyama, JP | 36 | 2009–2019 |