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Inventor

Yuichi Inaba

Inventor
Osaka, JP

Overview

15→
Patents
1990–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light13%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light10%
G02BOptical elements, systems or apparatus10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
G06VImage or video recognition or understanding7%
H03KPulse technique7%
H10DInorganic electric semiconductor devices7%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
G06FElectric digital data processing3%
H01LSemiconductor devices3%
PatentTitleYear
9,528,879'Infrared detection element, infrared detector, and infrared type gas sensor'20169,494,467'Infrared detection element, infrared detector, and infrared type gas sensor'20168,896,369'Switching device'20148,797,086'Switching device'20147,764,340'Optical interference filter that performs excellent color separation, and liquid crystal display, electroluminescence display and projection display apparatus having the optical interference filter'20107,750,354'Solid-state imaging device and manufacturing method for the same'20107,741,724'Semiconductor device'20107,655,569'Method of manufacturing semiconductor device'20107,623,166'Solid-state imaging device with high pixel count that includes color filter with high color reproducibility and camera that uses it'20097,416,915'Solid-state imaging device and manufacturing method for the same'20086,678,299'Semiconductor laser apparatus'20046,608,850'Semiconductor laser apparatus'20036,104,738'Semiconductor laser and process for producing the same'20005,793,788'Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same'19984,980,829'Method and system for language translation'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990Patents assigned to HITACHI LTD (1)· patent assignee history
1998–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (5)· patent assignee history
1998–2000Based in Katano, JP· patent location history
2003–2016Based in Osaka, JP· patent location history
2008–2010Based in Moriguchi, JP· patent location history
2009–2014Patents assigned to PANASONIC CORP (5)· patent assignee history
2010Patents assigned to SANYO ELECTRIC CO (2)· patent assignee history
2010Patents assigned to SANYO SEMICONDUCTOR CO LTD (2)· patent assignee history
2010Based in Gunma, JP· patent location history
2010Based in Ota, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51998–2008
PANASONIC CORP52009–2014
SANYO ELECTRIC CO22010
SANYO SEMICONDUCTOR CO LTD22010
HITACHI LTD11990
Locations
LocationPatentsSpan
Osaka, JP82003–2016
Moriguchi, JP22008–2010
Katano, JP21998–2000
Gunma, JP12010
Ota, JP12010