Inventor

Zheng Xu

Inventor
Foster City, CA, US

Overview

125→
Patents
1995–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 125 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01JElectric discharge tubes or discharge lamps13%
H01LSemiconductor devices8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
Y02PClimate change mitigation technologies in the production or processing of goods4%
H01RElectrically-conductive connections2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
10,784,457Fabricating method of QLED device and QLED device202010,610,117Flexible silicon nanowire electrode202010,309,012Wafer carrier for reducing contamination from carbon particles and outgassing201910,164,127Module fabrication of solar cells with low resistivity electrodes201810,115,839Module fabrication of solar cells with low resistivity electrodes201810,084,107Transparent conducting oxide for photovoltaic devices201810,084,099Aluminum grid as backside conductor on epitaxial silicon thin film solar cells201810,074,755High efficiency solar panel201810,047,430Self-ionized and inductively-coupled plasma for sputtering and resputtering20189,991,157Method for depositing a diffusion barrier layer and a metal conductive layer20189,899,554'Method of installing a strain relief apparatus to a solar cell'20189,887,306'Tunneling-junction solar cell with copper grid for concentrated photovoltaic application'20189,865,754'Hole collectors for silicon photovoltaic cells'20189,800,053'Solar panels with integrated cell-level MPPT devices'20179,773,928'Solar cell with electroplated metal grid'20179,537,032'Low-cost high-efficiency solar module using epitaxial Si thin-film absorber and double-sided heterojunction solar cell with integrated module fabrication'20179,502,590'Photovoltaic devices with electroplated metal grids'20169,496,427'Module fabrication of solar cells with low resistivity electrodes'20169,496,451'System for improving solar cell manufacturing yield'20169,461,189'Photovoltaic devices with electroplated metal grids'20169,460,925'System and apparatus for efficient deposition of transparent conductive oxide'20169,412,884'Module fabrication of solar cells with low resistivity electrodes'20169,390,970'Method for depositing a diffusion barrier layer and a metal conductive layer'20169,391,230'Method for improving solar cell manufacturing yield'20169,343,595'Photovoltaic devices with electroplated metal grids'20169,281,436'Radio-frequency sputtering system with rotary target for fabricating solar cells'20169,219,174'Module fabrication of solar cells with low resistivity electrodes'20159,214,576'Transparent conducting oxide for photovoltaic devices'20159,054,256'Tunneling-junction solar cell with copper grid for concentrated photovoltaic application'20159,012,766'Aluminum grid as backside conductor on epitaxial silicon thin film solar cells'20158,872,020'Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design'20148,845,809'Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition'20148,696,875'Self-ionized and inductively-coupled plasma for sputtering and resputtering'20148,686,283'Solar cell with oxide tunneling junctions'20148,668,816'Self-ionized and inductively-coupled plasma for sputtering and resputtering'20148,652,259'Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition'20148,637,761'Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers'20148,619,436'Electrical component and method for making the same'20138,454,395'Electrical connector having improved contact member'20138,398,832'Coils for generating a plasma and for sputtering'20138,283,557'Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design'20128,215,982'Electrical connector having reliable connection between LED devices and printed circuit board'20128,158,511'Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features'20127,989,343'Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features'20117,948,771'Electrical component and method for making the same'20117,795,138'Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate'20107,736,176'Modular jack assembly having improved connecting terminal'20107,687,909'Metal / metal nitride barrier layer for semiconductor device applications'20107,670,172'Modular jack assembly'20107,589,016'Method of depositing a sculptured copper seed layer'20097,517,254'Modular jack assembly having improved base element'20097,510,441'Electrical connector having improved based element'20097,485,004'Electrical connector having improved electrical element'20097,381,639'Method of depositing a metal seed layer on semiconductor substrates'20087,294,574'Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement'20077,253,109'Method of depositing a tantalum nitride/tantalum diffusion barrier layer system'20077,090,542'Multi-port modular jack assembly with accurate assemblying means'20067,074,714'Method of depositing a metal seed layer on semiconductor substrates'20067,048,837'End point detection for sputtering and resputtering'20067,006,888'Semiconductor wafer preheating'20067,003,006'Green diode laser'20066,991,709'Multi-step magnetron sputtering process'20066,960,284'Rotational and reciprocal radial movement of a sputtering magnetron'20056,919,275'Method of preventing diffusion of copper through a tantalum-comprising barrier layer'20056,875,321'Auxiliary magnet array in conjunction with magnetron sputtering'20056,787,006'Operating a magnetron sputter reactor in two modes'20046,783,639'Coils for generating a plasma and for sputtering'20046,758,947'Damage-free sculptured coating deposition'20046,692,617'Sustained self-sputtering reactor having an increased density plasma'20046,672,864'Method and apparatus for processing substrates in a system having high and low pressure areas'20046,660,134'Feedthrough overlap coil'20036,610,184'Magnet array in conjunction with rotating magnetron for plasma sputtering'20036,599,399'Sputtering method to generate ionized metal plasma using electron beams and magnetic field'20036,547,934'Reduction of metal oxide in a dual frequency etch chamber'20036,514,390'Method to eliminate coil sputtering in an ICP source'20036,485,618'Integrated copper fill process'20026,451,179'Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma'20026,451,177'Vault shaped target and magnetron operable in two sputtering modes'20026,449,525'Computer system to control multiple step ionized metal plasma deposition process for conformal step coverage'20026,413,382'Pulsed sputtering with a small rotating magnetron'20026,409,890'Method and apparatus for forming a uniform layer on a workpiece during sputtering'20026,399,479'Processes to improve electroplating fill'20026,372,633'Method and apparatus for forming metal interconnects'20026,368,469'Coils for generating a plasma and for sputtering'20026,313,027'Method for low thermal budget metal filling and planarization of contacts vias and trenches'2001D0450070'Sputtering chamber coil'20016,277,249'Integrated process for copper via filling using a magnetron and target producing highly energetic ions'20016,274,008'Integrated process for copper via filling'20016,254,746'Recessed coil for generating a plasma'20016,238,528'Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source'20016,238,803'Titanium nitride barrier layers'20016,238,533'Integrated PVD system for aluminum hole filling using ionized metal adhesion layer'20016,235,169'Modulated power for ionized metal plasma deposition'20016,231,725'Apparatus for sputtering material onto a workpiece with the aid of a plasma'20016,232,665'Silicon-doped titanium wetting layer for aluminum plug'20016,217,721'Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer'2001D0440582'Sputtering chamber coil'20016,217,718'Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma'20016,190,513'Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition'20016,146,508'Sputtering method and apparatus with small diameter RF coil'20006,136,095'Apparatus for filling apertures in a film layer on a semiconductor substrate'20006,110,821'Method for forming titanium silicide in situ'20006,080,285'Multiple step ionized metal plasma deposition process for conformal step coverage'20006,077,402'Central coil design for ionized metal plasma deposition'20006,051,114'Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition'20006,045,666'Aluminum hole filling method using ionized metal adhesion layer'20006,033,541'Deposition process for coating or filling re-entry shaped contact holes'20005,976,334'Reliable sustained self-sputtering'19995,962,923'Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches'19995,911,113'Silicon-doped titanium wetting layer for aluminum plug'19995,902,461'Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma'19995,895,266'Titanium nitride barrier layers'19995,876,574'Magnet design for a sputtering chamber'19995,868,847'Clamp ring for shielding a substrate during film layer deposition'19995,851,364'Method for forming aluminum contacts'19985,851,344'Ultrasonic wave assisted contact hole filling'19985,847,461'Integrated circuit structure having contact openings and vias filled by self-extrusion of overlying metal layer'19985,841,624'Cover layer for a substrate support chuck and method of fabricating same'19985,780,357'Deposition process for coating or filling re-entry shaped contact holes'19985,763,851'Slotted RF coil shield for plasma deposition system'19985,736,021'Electrically floating shield in a plasma reactor'19985,685,960'Method for forming aluminum contacts'19975,668,055'Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer'19975,610,103'Ultrasonic wave assisted contact hole filling'19975,467,220'Method and apparatus for improving semiconductor wafer surface temperature uniformity'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2018Patents assigned to APPLIED MATERIALS INC (81)· patent assignee history
1995–2018Based in Foster City, CA, US· patent location history
2007–2019Based in Pleasanton, CA, US· patent location history
2009–2013Based in Kunshan, CN· patent location history
2012–2017Patents assigned to XU ZHENG (16)· patent assignee history
2012–2018Patents assigned to SILEVO INC (13)· patent assignee history
2012–2017Patents assigned to FU JIANMING (11)· patent assignee history
2015–2019Patents assigned to SOLARCITY CORP (20)· patent assignee history
2020Based in Guangdong, CN· patent location history
2020Based in Wappingers Falls, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC811995–2018
SOLARCITY CORP202015–2019
XU ZHENGself162012–2017
SILEVO INC132012–2018
FU JIANMING112012–2017
Locations
LocationPatentsSpan
Foster City, California, US781995–2018
Pleasanton, California, US312007–2019
Kunshan, CN92009–2013
Guangdong, CN12020
Wappingers Falls, New York, US12020