Inventor

Kuang-Hsin Chen

Inventor
Jungli, TW

Overview

64→
Patents
2005–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 64 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
G11CStatic stores1%
G06FElectric digital data processing1%
H10BElectronic memory devices1%
PatentTitleYear
10,840,143Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment mark202010,629,481Method for forming interconnect structure202010,546,786Method of fabricating a FinFET device202010,361,085Fin field effect transistor (finFET) device structure with ultra-thin body and method for forming the same201910,347,766Semiconductor device and method of fabricating the same201910,319,675Capacitor embedded with nanocrystals201910,249,562Package structure and fabrication method thereof201910,205,024Semiconductor structure having field plate and associated fabricating method201910,199,320Method of fabricating electronic package201910,177,036Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrate201910,163,516Semiconductor device structure201810,134,626Mechanisms for forming FinFETs with different fin heights201810,068,984Method of manufacturing high-k dielectric using HfO/Ti/Hfo layers201810,062,614FinFET device201810,056,299Metal gate structure and manufacturing method thereof201810,049,973Electronic package and fabrication method thereof and substrate structure201810,008,494Semiconductor component and method for fabricating the same20189,947,766Semiconductor device and fabricating method thereof20189,911,658'Methods for forming a semiconductor arrangement with multiple-height fins and substrate trenches'20189,842,761'Mechanisms for forming FinFETs with different fin heights'20179,818,683'Electronic package and method of fabricating the same'20179,768,069'Method of manufacturing semiconductor device'20179,748,183'Fabrication method of semiconductor package'20179,716,034'Method for forming interconnect structure'20179,711,611'Modified self-aligned contact process and semiconductor device'20179,711,408'Integrated circuit structure and method for manufacturing thereof'20179,704,970'Semiconductor device and fabricating method thereof'20179,673,340'Semiconductor device structure'20179,627,307'Semiconductor package and fabrication method thereof'20179,620,645'Fin field effect transistor (FinFET) device structure with ultra-thin body and method for forming the same'20179,614,088'Metal gate structure and manufacturing method thereof'20179,583,362'Metal gate structure and manufacturing method thereof'20179,570,568'Semiconductor component and method for fabricating the same'20179,559,011'Mechanisms for forming FinFETs with different fin heights'20179,508,590'Methods and apparatus of metal gate transistors'20169,425,285'Fabricating method of semiconductor device'20169,379,211'Fabricating method of semiconductor device'20169,324,577'Modified self-aligned contact process and semiconductor device'20169,306,023'Semiconductor device with gate stacks and method of manufacturing the same'20169,269,626'Integrated circuit structure and method for manufacturing thereof'20169,257,505'Structures and formation methods of finFET device'20169,252,259'Methods and apparatus of metal gate transistors'20169,231,067'Semiconductor device and fabricating method thereof'20169,196,596'Interposer and method of manufacturing the same'20159,190,319'Method for forming interconnect structure'20159,184,087'Mechanisms for forming FinFETs with different fin heights'20159,122,828'Apparatus and method for designing an integrated circuit layout having a plurality of cell technologies'20159,076,796'Interconnection structure for package and fabrication method thereof'20158,860,151'Semiconductor device having a spacer and a liner overlying a sidewall of a gate structure and method of forming the same'20148,697,515'Method of making a FinFET device'20147,986,029'Dual SOI structure'20117,923,759'Metal gate semiconductor device and manufacturing method'20117,732,298'Metal salicide formation having nitride liner to reduce silicide stringer and encroachment'20107,663,185'FIN-FET device structure formed employing bulk semiconductor substrate'20107,538,351'Method for forming an SOI structure with improved carrier mobility and ESD protection'20097,528,078'Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer'20097,332,777'STI liner for SOI structure'20087,297,587'Composite gate structure in an integrated circuit'20077,265,425'Semiconductor device employing an extension spacer and a method of forming the same'20077,205,601'FinFET split gate EEPROM structure and method of its fabrication'20077,183,596'Composite gate structure in an integrated circuit'20077,074,692'Method for reducing a short channel effect for NMOS devices in SOI circuits'20067,026,196'Method of forming field effect transistor and structure formed thereby'20066,955,955'STI liner for SOI structure'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (16)· patent assignee history
2005–2010Based in Hsinchu, TW· patent location history
2006–2020Based in Jungli, TW· patent location history
2009Patents assigned to FREESCALE SEMICONDUCTOR INC (1)· patent assignee history
2014Patents assigned to CHEN KUANG-HSIN (1)· patent assignee history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (37)· patent assignee history
2015–2019Patents assigned to SILICONWARE PRECISION INDUSTRIES CO LTD (8)· patent assignee history
2015–2019Based in Taichung, TW· patent location history
2016–2019Based in Taoyuan, TW· patent location history
2016–2019Based in Taoyuan County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD372015–2020
TAIWAN SEMICONDUCTOR MFG162005–2016
SILICONWARE PRECISION INDUSTRIES CO LTD82015–2019
CHEN KUANG-HSINself12014
FREESCALE SEMICONDUCTOR INC12009
Locations
LocationPatentsSpan
Jungli, TW362006–2020
Taoyuan, TW112016–2019
Taichung, TW82015–2019
Hsinchu, TW42005–2010
Taoyuan County, TW32016–2019