Inventor
Ralph Wirth
Inventor
Lappersdorf, DE
Overview
Patents· 73 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers40%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H01LSemiconductor devices17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted3%
H05BElectric heating2%
F21KNon-electric light sources using luminescence2%
F21VFunctional features or details of lighting devices or systems thereof1%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
10,665,747Optoelectronic semiconductor component202010,418,530Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element201910,396,251Light-emitting diode including a plurality of luminescent regions201910,355,174Component having improved coupling-out properties201910,276,752Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component201910,217,909Optoelectronic semiconductor component201910,050,022Optoelectronic component20189,985,171Optoelectronic semiconductor component20189,735,321'Light-emitting diode including a plurality of luminescent regions'20179,728,683'Optoelectronic semiconductor component'20179,653,436'LED module with LED chips'20179,640,739'Optoelectronic component with inert gas atmosphere'20179,559,266'Lighting apparatus including an optoelectronic component'20179,538,609'Optoelectronic device'20179,520,442'Optoelectronic component'20169,497,826'Light-emitting diode arrangement and light-emitting means, in particular with such a light-emitting diode arrangement'20169,490,396'Optoelectronic semiconductor component'20169,488,344'Method for producing a lighting device and lighting device'20169,437,792'Optoelectronic semiconductor component'20169,419,193'Optoelectronic component and method for producing an opto-electronic component'20169,414,447'LED module'20169,398,664'Optoelectronic device that emits mixed light'20169,209,328'Optoelectronic semiconductor component'20159,190,573'Semiconductor light-emitting device with reflective surface region'20159,097,392'Mixed light source'20159,082,944'Optoelectronic semiconductor component and scattering body'20159,012,926'Radiation-emitting semiconductor component'20158,952,390'Optoelectronic component'20158,847,247'Optoelectronic module comprising at least one first semiconductor body having a radiation outlet side and an insulation layer and method for the production thereof'20148,835,931'Optoelectronic component and method for producing an optoelectronic component'20148,835,937'Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component'20148,785,951'Optoelectric component'20148,723,192'Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component'20148,624,269'Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip'20148,624,289'Optoelectronic component'20148,563,998'Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component'20138,558,259'Optoelectronic component having a dome-like conversion element'20138,501,513'Optoelectronic semiconductor component with current spreading layer'20138,405,104'Luminescent diode chip with luminescence conversion element and angular filter element'20138,354,682'Radiation emitting element'20138,314,431'LED semiconductor element having increased luminance'20128,293,553'Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element'20128,283,684'LED semiconductor body and use of an LED semiconductor body'20128,203,160'LED semiconductor body and use of an LED semiconductor body'20128,158,995'Optoelectronic semiconductor chip'20128,115,219'LED semiconductor body and use of an LED semiconductor body'20128,067,783'Radiation-emitting chip comprising at least one semiconductor body'20118,017,953'Luminescence diode chip with current spreading layer and method for producing the same'20118,003,974'LED semiconductor element having increased luminance'20117,989,830'Optoelectronic thin-film chip'20117,884,383'Radiation emitting semiconductor chip'20117,838,892'Optoelectronic semiconductor chip and method for forming a contact structure for making electrical contact with an optoelectronic semiconductor chip'20107,692,204'Radiation emitting semi-conductor element'20107,667,240'Radiation-emitting semiconductor chip and method for producing such a semiconductor chip'20107,663,150'Optoelectronic chip'20107,649,193'Semiconductor body and semiconductor chip comprising a semiconductor body'20107,547,921'Semiconductor chip for optoelectronics'20097,435,999'Semiconductor chip for optoelectronics and method for the production thereof'20087,435,605'Method for fabricating a component having an electrical contact region'20087,283,577'Radiation-emitting semiconductor component'20077,242,034'Method for fabricating a component having an electrical contact region, and component having an electrical contact region'20077,145,181'Semiconductor chip for optoelectronics'20067,135,709'Surface structured light-emitting diode with improved current coupling'20067,109,527'Semiconductor chip for optoelectronics and method for production thereof'20066,995,030'Semiconductor chip for optoelectronics'20066,979,842'Opto-electronic component with radiation-transmissive electrical contact layer'20056,936,853'Light-emitting semiconductor component'20056,900,476'Light-emitting semiconductor component'20056,784,027'Light-emitting semiconductor component'20046,710,374'Light-emitting semiconductor component'20046,661,033'LED with a coupling-out structure'20036,649,939'Light-emitting diode with a structured surface'20036,518,601'Light-emitting diode'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2020Patents assigned to OSRAM OPTO SEMICONDUCTORS GMBH (58)· patent assignee history
2003–2006Based in Regensburg, DE· patent location history
2005–2013Based in Pettendorf-Adlersberg, DE· patent location history
2006–2019Patents assigned to OSRAM GMBH (14)· patent assignee history
2010Based in Pettendorf, DE· patent location history
2011–2017Patents assigned to WIRTH RALPH (28)· patent assignee history
2011–2016Based in Mintraching, DE· patent location history
2013–2016Patents assigned to BARCHMANN BERND (5)· patent assignee history
2013–2016Patents assigned to WEGLEITER WALTER (4)· patent assignee history
2014–2020Based in Lappersdorf, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| OSRAM OPTO SEMICONDUCTORS GMBH | 58 | 2003–2020 |
| WIRTH RALPHself | 28 | 2011–2017 |
| OSRAM GMBH | 14 | 2006–2019 |
| BARCHMANN BERND | 5 | 2013–2016 |
| WEGLEITER WALTER | 4 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Lappersdorf, DE | 31 | 2014–2020 |
| Pettendorf-Adlersberg, DE | 18 | 2005–2013 |
| Mintraching, DE | 15 | 2011–2016 |
| Regensburg, DE | 8 | 2003–2006 |
| Pettendorf, DE | 1 | 2010 |