A light emitting device comprising:nan LED semiconductor body comprising a number of radiation-generating active layers, the number being at least two; anda resistor connected in series with the active layers;wherein, the number of active layers is adapted to an operating voltage applied to the light emitting device in such a way that a voltage drop across the resistor is at most of the same magnitude as a voltage drop across the LED semiconductor body; andwherein the LED semiconductor body is integrated with the series resistor into a chip.
›2.↳ 1The light emitting device as claimed in claim 1, wherein the active layers each have a forward voltage and wherein the voltage drop across the resisto…d2
The light emitting device as claimed in claim 1, wherein the active layers each have a forward voltage and wherein the voltage drop across the resistor is less than the smallest forward voltage drop in the LED semiconductor body.
›3.↳ 1The light emitting device as claimed in claim 1, wherein the active layers are monolithically integrated in the LED semiconductor body.d2
The light emitting device as claimed in claim 1, wherein the active layers are monolithically integrated in the LED semiconductor body.
›4.↳ 1The light emitting device as claimed in claim 1, wherein the active layers are arranged one above another in a vertical direction.d2
The light emitting device as claimed in claim 1, wherein the active layers are arranged one above another in a vertical direction.
›5.↳ 1The light emitting device as claimed in claim 1, wherein the active layers generate radiation having the same wavelength.d2
The light emitting device as claimed in claim 1, wherein the active layers generate radiation having the same wavelength.
›6.↳ 1The light emitting device as claimed in claim 1, wherein the active layers generate radiation having different wavelengths.d2
The light emitting device as claimed in claim 1, wherein the active layers generate radiation having different wavelengths.
›7.↳ 1The light emitting device as claimed in claim 1, further comprising a housing body, wherein the LED semiconductor body is integrated with the series r…d2
The light emitting device as claimed in claim 1, further comprising a housing body, wherein the LED semiconductor body is integrated with the series resistor into the housing body.
›8.↳ 1The light emitting device as claimed in claim 1, further comprising a tunnel junction formed between two of the active layers.d2
The light emitting device as claimed in claim 1, further comprising a tunnel junction formed between two of the active layers.
›9.↳ 1The light emitting device as claimed in claim 1, wherein the LED semiconductor body comprises a first and a second outer contact for an electrical con…d2+3
The light emitting device as claimed in claim 1, wherein the LED semiconductor body comprises a first and a second outer contact for an electrical connection.
›10.↳ 9The light emitting device as claimed in claim 9, wherein a first operating voltage can be applied to the light emitting device by means of the first a…d3+2
The light emitting device as claimed in claim 9, wherein a first operating voltage can be applied to the light emitting device by means of the first and the second outer contacts.
›11.↳ 10The light emitting device as claimed in claim 10, further comprising an inner contact between two of the active layers.d4+1
The light emitting device as claimed in claim 10, further comprising an inner contact between two of the active layers.
›12.↳ 11The light emitting device as claimed in claim 11, wherein a second operating voltage can be applied to the light emitting device by means of the first…d5
The light emitting device as claimed in claim 11, wherein a second operating voltage can be applied to the light emitting device by means of the first or second outer contact and the inner contact.
›13.↳ 1The light emitting device as claimed in claim 1, wherein the operating voltage is a DC voltage.d2+5
The light emitting device as claimed in claim 1, wherein the operating voltage is a DC voltage.
›14.↳ 13The light emitting device as claimed in claim 13, wherein the LED semiconductor body comprises three inner contacts.d3+4
The light emitting device as claimed in claim 13, wherein the LED semiconductor body comprises three inner contacts.
›15.↳ 14The light emitting device as claimed in claim 14, wherein an operating voltage of 5 V can be applied to the light emitting device to cause the light e…d4+3
The light emitting device as claimed in claim 14, wherein an operating voltage of 5 V can be applied to the light emitting device to cause the light emitting device to emit light, the operating voltage applied by means of the first outer contact and a first inner contact.
›16.↳ 15The light emitting device as claimed in claim 15, wherein an operating voltage of 9 V can be applied to the light emitting device to cause the light e…d5+2
The light emitting device as claimed in claim 15, wherein an operating voltage of 9 V can be applied to the light emitting device to cause the light emitting device to emit light, the operating voltage applied by means of the first outer contact and a second inner contact.
›17.↳ 16The light emitting device as claimed in claim 16, wherein an operating voltage of 12 V can be applied to the light emitting device to cause the light …d6+1
The light emitting device as claimed in claim 16, wherein an operating voltage of 12 V can be applied to the light emitting device to cause the light emitting device to emit light, the operating voltage applied by means of the first outer contact and a third inner contact.
›18.↳ 17The light emitting device as claimed in claim 17, wherein an operating voltage of 24 V can be applied to the light emitting device to cause the light …d7
The light emitting device as claimed in claim 17, wherein an operating voltage of 24 V can be applied to the light emitting device to cause the light emitting device to emit light, the operating voltage applied by means of the first outer contact and the second outer contact.
›19.↳ 1The light emitting device as claimed in claim 1, wherein the operating voltage is 5 V, 12 V or 24 V.d2
The light emitting device as claimed in claim 1, wherein the operating voltage is 5 V, 12 V or 24 V.
›20.↳ 1The light emitting device as claimed in claim 1, wherein the operating voltage is an AC voltage.d2+1
The light emitting device as claimed in claim 1, wherein the operating voltage is an AC voltage.
›21.↳ 20The light emitting device as claimed in claim 20, wherein the operating voltage is 2 V, 12 V or 18 V.d3
The light emitting device as claimed in claim 20, wherein the operating voltage is 2 V, 12 V or 18 V.
›22.↳ 1The light emitting device as claimed in claim 1, wherein two of the active layers are connected in antiparallel.d2
The light emitting device as claimed in claim 1, wherein two of the active layers are connected in antiparallel.
›23.↳ 1The light emitting device as claimed in claim 1, wherein the active layers are connected in series.d2
The light emitting device as claimed in claim 1, wherein the active layers are connected in series.
›24.↳ 1The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mP, where 0≦n≦1, 0≦m≦1 an…d2
The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mP, where 0≦n≦1, 0≦m≦1 and n+m≦1.
›25.↳ 1The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mAs, where 0≦n≦1, 0≦m≦1 a…d2
The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mAs, where 0≦n≦1, 0≦m≦1 and n+m≦1.
›26.↳ 1The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mN, where 0≦n≦1, 0≦m≦1 an…d2
The light emitting device as claimed in claim 1, wherein at least one of the active layers comprises AlnGamIn1−n−mN, where 0≦n≦1, 0≦m≦1 and n+m≦1.
›27.↳ 1The light emitting device as claimed in claim 1, wherein the LED semiconductor body is a thin-film semiconductor body.d2
The light emitting device as claimed in claim 1, wherein the LED semiconductor body is a thin-film semiconductor body.
