Inventor
Brian J. Goolsby
Inventor
Austin, TX, US
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices73%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
PatentTitleYear
7,821,067'Electronic devices including a semiconductor layer'20107,737,496'Electronic devices including a semiconductor layer'20107,566,623'Electronic device including a semiconductor fin having a plurality of gate electrodes and a process for forming the electronic device'20097,402,476'Method for forming an electronic device'20087,361,561'Method of making a metal gate semiconductor device'20087,265,004'Electronic devices including a semiconductor layer and a process for forming the same'20077,238,561'Method for forming uniaxially strained devices'20077,208,424'Method of forming a semiconductor device having a metal layer'20077,091,071'Semiconductor fabrication process including recessed source/drain regions in an SOI wafer'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2010Patents assigned to FREESCALE SEMICONDUCTOR INC (8)· patent assignee history
2006–2010Based in Austin, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 8 | 2006–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 9 | 2006–2010 |