An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.

Claims

20 · 3 independent · depth 3

20 granted claims

›1.independentA structure during formation of an electronic device, the structure comprising:na substrate;an insulating layer over the substrate;a first semiconduct…+8

›2.↳ 1The structure of claim 1, wherein the concentration gradient is characterized as a function of a distance from the first semiconductor portion to the …d2

›3.↳ 1The structure of claim 1, wherein:nthe first semiconductor portion has a first stress with respect to the insulating layer; andthe second semiconducto…d2

›4.↳ 1The structure of claim 1, wherein each of the first, second, and third semiconductor portions lies on the insulating layer.d2

›5.↳ 1The structure of claim 1, whereinnthe first semiconductor portion has a tensile stress; andthe second semiconductor portion has a compressive stress.d2

›6.↳ 1The structure of claim 1, wherein the second semiconductor portion has a lattice constant no greater than approximately 0.56 nm.d2

›7.↳ 1The structure of claim 1, further comprising:nan oxidation-resistant layer that overlies the first semiconductor portion and part of the semiconductor…d2+1

›9.↳ 1The structure of claim 1, wherein the first, second, and third semiconductor portions include silicon, and the first semiconductor element is germaniu…d2

›10.independentAn electronic device comprising:na substrate;an insulating layer over the substrate;a first semiconductor portion abutting the insulating layer, where…+4

›14.independentAn electronic device comprising:na substrate;an insulating layer over the substrate;a first semiconductor portion overlying the insulating layer, wher…+5

Classifications

3 codes

IPC · International Patent Classification

Section H — Electricity

H01L21/84

USPC · US Patent Classification

257/347257/E21.561

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Pendency

2.8 y

1,040 days filing → grant

Office actions

non-final + final

Responses

1 RCE

Examiner

Richard A. Booth

art unit 2812 · TC 2800

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20070272952 A1	29 Nov 2007

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