Inventor

Innocenzo Tortorelli

Inventor

Cernusco Sul Naviglio, IT

Overview

2013–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 85 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores25%

H10NElectric solid-state devices not otherwise provided for23%

H01LSemiconductor devices20%

H10BElectronic memory devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

G06FElectric digital data processing2%

H10DInorganic electric semiconductor devices2%

G06NComputing arrangements based on specific computational models1%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%

G01NInvestigating or analysing materials by determining their chemical or physical properties1%

PatentTitleYear

11,120,870Mixed cross point memory2021 11,114,159Dedicated read voltages for data structures2021 11,114,613Cross-point memory and methods for forming of the same2021 11,094,879Structures incorporating and methods of forming metal lines including carbon2021 11,094,377Multi-level self-selecting memory device2021 11,074,971Apparatuses and methods including memory and operation of same2021 11,062,767Techniques for programming neural memory unit using cell conditioning2021 11,037,613Implementations to store fuse data in memory devices2021 11,031,553Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references2021 11,024,372Segregation-based memory2021 11,018,300Self-aligned memory decks in cross-point memory arrays2021 10,985,212Multi-component cell architectures for a memory device2021 10,976,936Sensing operations in memory2021 10,937,829Three dimensional memory arrays2021 10,921,989Sensing operations in memory2021 10,896,932Three dimensional memory array2021 10,892,406Phase change memory structures and devices2021 10,884,640Set technique for phase change memory2021 10,861,539Neural network memory2020 10,854,674Cross-point memory and methods for fabrication of same2020 10,854,813Dopant-modulated etching for memory devices2020 10,803,939Techniques for programming a memory cell2020 10,803,934Mixed cross point memory2020 10,777,291Drift mitigation with embedded refresh2020 10,777,275Reset refresh techniques for self-selecting memory2020 10,777,266Mixed cross point memory2020 10,707,271Memory cells having resistors and formation of the same2020 10,680,170Cross-point memory and methods for forming of the same2020 10,672,833Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices2020 10,665,298Techniques to access a self-selecting memory device2020 10,658,035Apparatuses and methods of reading memory cells2020 10,658,034Dedicated read voltages for data structures2020 10,600,481Apparatuses including memory cells and methods of operation of same2020 10,600,456Program operations in memory2020 10,580,980Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references2020 10,559,353Weight storage using memory device2020 10,546,632Multi-level self-selecting memory device2020 10,510,957Self-aligned memory decks in cross-point memory arrays2019 10,497,753Three dimensional memory array2019 10,497,863Method, system, and device for L-shaped memory component2019 10,461,125Three dimensional memory arrays2019 10,446,226Apparatuses including multi-level memory cells and methods of operation of same2019 10,424,374Programming enhancement in self-selecting memory2019 10,418,102Apparatuses and methods including memory and operation of same2019 10,381,077Apparatuses and methods including memory and operation of same2019 10,283,703Cross-point memory and methods for forming of the same2019 10,283,198Apparatuses and methods of reading memory cells based on response to a test pulse2019 10,269,442Drift mitigation with embedded refresh2019 10,263,039Memory cells having resistors and formation of the same2019 10,255,975Apparatuses and methods of reading memory cells2019 10,248,351Set technique for phase change memory2019 10,186,659Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references2019 10,163,982Multi-deck memory device with inverted deck2018 10,163,506Apparatuses including memory cells and methods of operation of same2018 10,157,650Program operations in memory2018 10,157,667Mixed cross point memory2018 10,157,670Apparatuses including memory cells and methods of operation of same2018 10,153,428Structures incorporating and methods of forming metal lines including carbon2018 10,134,470Apparatuses and methods including memory and operation of same2018 10,102,891Double-polarity memory read2018 10,096,655Three dimensional memory array2018 10,062,433Apparatuses and methods of reading memory cells2018 9,876,168Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references2018 9,806,129'Cross-point memory and methods for fabrication of same'2017 9,799,381'Double-polarity memory read'2017 9,768,378'Cross-point memory and methods for fabrication of same'2017 9,705,080'Forming self-aligned conductive lines for resistive random access memories'2017 9,698,345'Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references'2017 9,672,908'Apparatuses and methods of reading memory cells based on response to a test pulse'2017 9,645,102'Material test structure'2017 9,634,245'Structures incorporating and methods of forming metal lines including carbon'2017 9,570,167'Apparatuses and methods of reading memory cells'2017 9,520,555'Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact'2016 9,444,043'Method, system and device for phase change memory with shunt'2016 9,406,881'Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same'2016 9,275,730'Apparatuses and methods of reading memory cells based on response to a test pulse'2016 9,196,530'Forming self-aligned conductive lines for resistive random access memories'2015 8,988,926'Method, system and device for phase change memory with shunt'2015 8,976,570'Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact'2015 8,945,403'Material test structure'2015 8,837,201'Programming an array of resistance random access memory cells using unipolar pulses'2014 8,680,499'Memory cells'2014 8,599,599'Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact'2013 8,467,226'Programming an array of resistance random access memory cells using unipolar pulses'2013 8,410,527'Electrical fuse device based on a phase-change memory element and corresponding programming method'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2021Patents assigned to MICRON TECHNOLOGY INC (70)· patent assignee history

2013–2015Patents assigned to TORTORELLI INNOCENZO (6)· patent assignee history

2013–2015Patents assigned to PELLIZZER FABIO (4)· patent assignee history

2013–2021Based in Moncalieri, IT· patent location history

2015–2021Based in Cernusco Sul Naviglio, IT· patent location history

2016–2021Patents assigned to OVONYX MEMORY TECH LLC (6)· patent assignee history

2017–2021Patents assigned to INTEL CORP (7)· patent assignee history

2019–2021Based in Santa Clara, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MICRON TECHNOLOGY INC	70	2013–2021
INTEL CORP	7	2017–2021
OVONYX MEMORY TECH LLC	6	2016–2021
TORTORELLI INNOCENZOself	6	2013–2015
PELLIZZER FABIO	4	2013–2015

Locations

Location	Patents	Span
Cernusco Sul Naviglio, IT	69	2015–2021
Moncalieri, IT	14	2013–2021
Santa Clara, California, US	2	2019–2021