Inventor
Takashi Shinohe
Inventor
Yokosuka, JP
Overview
Patents· 114 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C30BSingle-crystal growth2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
C23CCoating metallic material1%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
H03KPulse technique1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation0%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications0%
PatentTitleYear
10,943,981Semiconductor device202110,944,015Semiconductor device202110,927,458Method of forming film202110,930,743Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device202110,770,553Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device202010,644,115Layered structure and semiconductor device including layered structure202010,580,648Semiconductor device and method of manufacturing semiconductor device202010,460,934Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film201910,319,819Semiconductor device and method for manufacturing the same201910,312,330Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device201910,177,251Semiconductor device, inverter circuit, drive device, vehicle, and elevator201910,177,009Manufacturing method for semiconductor device including first and second thermal treatments201910,079,282Semiconductor device and method of manufacturing the same20189,978,842Semiconductor device and method for manufacturing the same20189,941,361Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device20189,837,488Semiconductor device20179,825,121'Semiconductor device'20179,812,589'Semiconductor device with schottky barrier diode'20179,793,824'Gate driving circuit, semiconductor device, and power conversion device'20179,793,354'Semiconductor device and method of manufacturing the same'20179,786,513'Manufacturing method for semiconductor device including first and second thermal treatments'20179,786,740'Semiconductor device and method for producing the same'20179,741,798'Semiconductor device'20179,716,186'Semiconductor device manufacturing method, and semiconductor device'20179,601,581'Semiconductor device and method for producing the same'20179,564,802'Electric power conversion device'20179,559,172'Semiconductor device and method of manufacturing the same'20179,490,327'Semiconductor device and method of manufacturing the same'20169,484,415'Semiconductor device and method for manufacturing the same'20169,443,937'Semiconductor device'20169,437,682'Semiconductor device and semiconductor device manufacturing method'20169,419,517'Electric power conversion device'20169,412,823'Semiconductor device and method of manufacturing the same'20169,373,686'Semiconductor device and method for manufacturing same and semiconductor substrate'20169,324,826'Semiconductor device and manufacturing method of the same'20169,324,787'Semiconductor device'20169,318,324'Manufacturing method of SiC epitaxial substrate, manufacturing method of semiconductor device, and semiconductor device'20169,306,007'Semiconductor device and method for manufacturing the same'20169,281,365'Semiconductor device and method for manufacturing the same'20169,269,781'Semiconductor device and method for manufacturing the same'20169,236,434'Semiconductor device and manufacturing method thereof'20169,214,459'Semiconductor device'20159,184,229'Semiconductor device and method for manufacturing same'20159,178,052'Semiconductor device'20159,171,908'SiC semiconductor device and method of manufacturing the same'20159,153,646'Semiconductor device and method for manufacturing the same'20159,142,661'Semiconductor device and method for manufacturing the same'20159,142,551'Semiconductor device having a pair of transistors that are directly coupled and capacitively coupled'20159,111,844'Semiconductor device having silicon carbide epitaxial layers and method of manufacturing the same'20159,099,342'Transistor and method for manufacturing same'20159,093,362'Semiconductor device and method of manufacturing the same'20159,064,779'Semiconductor rectifier'20159,041,008'Semiconductor device and method of manufacturing the same'20159,029,869'Semiconductor device'20159,018,637'Transistor and method for manufacturing same'20159,018,636'Semiconductor device having a plurality of transistors with different crystal face'20159,012,923'Semiconductor device'20158,994,034'Semiconductor device and method of manufacturing the same'20158,987,812'Semiconductor device and semiconductor device manufacturing method'20158,951,898'Method for manufacturing a silicon carbide DIMOSFET'20158,941,120'Semiconductor device and method for manufacturing the same'20158,933,464'SiC epitaxial wafer and semiconductor device'20158,933,465'Semiconductor device'20158,901,622'Semiconductor device and method for fabricating the same'20148,841,741'High breakdown voltage semiconductor rectifier'20148,835,288'Method of manufacturing silicon carbide semiconductor device'20148,823,148'Diode with epitaxially grown semiconductor layers'20148,796,694'Semiconductor device'20148,790,983'Semiconductor device and method for manufacturing the same'20148,686,436'Silicon carbide semiconductor device'20148,686,437'DIMOSFET SiC semiconductor device'20148,679,957'Method of manufacturing semiconductor device'20148,669,562'Semiconductor device and method for manufacturing the same'20148,658,503'Semiconductor device and method of fabricating the same'20148,629,456'Semiconductor device'20148,624,264'Semiconductor device with low resistance SiC-metal contact'20148,569,795'Semiconductor device and method of manufacturing the same'20138,431,974'Silicon carbide semiconductor device'20138,367,507'Manufacturing method of semiconductor device'20138,354,715'Semiconductor device and method of fabricating the same'20138,012,837'Method of manufacturing semiconductor device'20117,977,210'Semiconductor substrate and semiconductor device'20117,947,988'Semiconductor device and method of manufacturing the same'20117,777,292'Semiconductor device'20107,649,213'Semiconductor device'20107,569,900'Silicon carbide high breakdown voltage semiconductor device'20097,508,045'SiC Schottky barrier semiconductor device'20097,439,563'High-breakdown-voltage semiconductor device'20087,368,783'Semiconductor device'20087,238,576'Semiconductor device and method of manufacturing the same'20077,078,781'High-breakdown-voltage semiconductor device'20067,049,675'High withstand voltage semiconductor device'20067,026,668'High-breakdown-voltage semiconductor device'20066,969,887'Semiconductor device'20056,855,970'High-breakdown-voltage semiconductor device'20056,831,345'High withstand voltage semiconductor device'20046,246,077'Semiconductor device'20016,236,069'Insulated-gate thyristor'20016,111,454'Power supply circuit'20006,054,748'High voltage semiconductor power device'20005,977,564'Semiconductor device'19995,969,400'High withstand voltage semiconductor device'19995,962,893'Schottky tunneling device'19995,910,738'Driving circuit for driving a semiconductor device at high speed and method of operating the same'19995,793,065'Insulated-gate thyristor'19985,464,994'Insulated-gate thyristor'19955,381,026'Insulated-gate thyristor'19955,210,432'Insulated gate GTO thyristor'19934,963,972'Gate turn-off thyristor with switching control field effect transistor'19904,914,496'Gate turn-off thyristor with independent turn-on/off controlling transistors'19904,791,470'Reverse conducting gate turn-off thyristor device'19884,760,431'Gate turn-off thyristor with independent turn-on/off controlling transistors'19884,717,940'MIS controlled gate turn-off thyristor'19884,617,583'Gate turn-off thyristor'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–2019Patents assigned to TOSHIBA KK (104)· patent assignee history
1986–1988Based in Kawasaki, JP· patent location history
1988–2001Based in Yokohama, JP· patent location history
1999–2019Based in Yokosuka, JP· patent location history
2004–2017Based in Kanagawa, JP· patent location history
2013–2016Patents assigned to SHINOHE TAKASHI (21)· patent assignee history
2013–2015Patents assigned to KONO HIROSHI (10)· patent assignee history
2014–2015Patents assigned to NISHIO JOHJI (6)· patent assignee history
2019–2021Patents assigned to FLOSFIA INC (8)· patent assignee history
2019–2021Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 104 | 1986–2019 |
| SHINOHE TAKASHIself | 21 | 2013–2016 |
| KONO HIROSHI | 10 | 2013–2015 |
| FLOSFIA INC | 8 | 2019–2021 |
| NISHIO JOHJI | 6 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokosuka, JP | 46 | 1999–2019 |
| Kanagawa, JP | 44 | 2004–2017 |
| Yokohama, JP | 13 | 1988–2001 |
| Kyoto, JP | 8 | 2019–2021 |
| Kawasaki, JP | 2 | 1986–1988 |