Inventor
Naonori Akae
Inventor
Toyama, JP
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
C23CCoating metallic material29%
H01LSemiconductor devices21%
LOC135%
H01JElectric discharge tubes or discharge lamps4%
LOC233%
B08BCleaning in general2%
H10DInorganic electric semiconductor devices1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,513,774Substrate processing apparatus and guide portion201910,513,775Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,081,868Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium20189,966,251Method of manufacturing semiconductor device and substrate processing apparatus20189,966,252Method of manufacturing semiconductor device and substrate processing apparatus20189,905,413'Method of manufacturing semiconductor device'20189,685,317'Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium'20179,601,326'Method of manufacturing semiconductor device, including film having uniform thickness'2017D0773609'Return nozzle'20169,508,546'Method of manufacturing semiconductor device'2016D0771772'Return nozzle'2016D0771543'Return nozzle'20169,425,075'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20169,401,272'Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium'20169,269,566'Substrate processing apparatus'20169,196,473'Method of manufacturing an oxynitride film for a semiconductor device'20159,190,264'Method of manufacturing semiconductor device, method of processing substrate and non-transitory computer readable recording medium'2015D0739832'Reaction tube'20159,096,928'Method of manufacturing semiconductor device and substrate processing apparatus'20159,039,838'Method of manufacturing semiconductor device and substrate processing apparatus'20159,011,601'Substrate processing apparatus'2015D0725055'Reaction tube'2015D0720707'Reaction tube'20158,925,562'Substrate processing apparatus and method of manufacturing semiconductor device'2015D0719114'Reaction tube'20148,901,014'Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium'20148,895,455'Method for manufacturing semiconductor device and substrate processing apparatus'20148,895,457'Method of manufacturing semiconductor device and substrate processing apparatus'2014D0711843'Reaction tube'20148,809,204'Method of manufacturing semiconductor device and substrate processing apparatus'20148,673,790'Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus'20148,609,551'Method for manufacturing semiconductor device and substrate processing apparatus'20138,524,580'Manufacturing method of semiconductor substrate and substrate processing apparatus'20138,415,258'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'20138,367,557'Method of forming an insulation film having low impurity concentrations'20138,252,701'Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus'20128,202,809'Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus'20128,076,251'Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2019Patents assigned to HITACHI INT ELECTRIC INC (37)· patent assignee history
2011–2015Patents assigned to AKAE NAONORI (14)· patent assignee history
2011–2015Patents assigned to HIROSE YOSHIRO (13)· patent assignee history
2011–2015Patents assigned to OTA YOSUKE (8)· patent assignee history
2011–2015Patents assigned to SASAJIMA RYOTA (6)· patent assignee history
2011–2019Based in Toyama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI INT ELECTRIC INC | 37 | 2011–2019 |
| AKAE NAONORIself | 14 | 2011–2015 |
| HIROSE YOSHIRO | 13 | 2011–2015 |
| OTA YOSUKE | 8 | 2011–2015 |
| SASAJIMA RYOTA | 6 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyama, JP | 38 | 2011–2019 |