Inventor
Victor A. K. Temple
Inventor
Clifton Park, NY, US
Overview
Patents· 85 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H03KPulse technique5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
G02BOptical elements, systems or apparatus3%
Y10TTechnical subjects covered by former us classification2%
H01HElectric switches1%
H01LSemiconductor devices1%
PatentTitleYear
9,543,932'Matrix stages solid state ultrafast switch'20179,159,790'Device and method for controlling the turn-off of a solid state switch (SGTO)'20158,970,286'Matrix-stages solid state ultrafast switch'20158,866,534'Matrix-stages solid state ultrafast switch'20148,575,990'Matrix-stages solid state ultrafast switch'20136,656,774'Method to enhance operating characteristics of FET, IGBT, and MCT structures'20036,274,892'Devices formable by low temperature direct bonding'20016,194,290'Methods for making semiconductor devices by low temperature direct bonding'20016,157,076'Hermetic thin pack semiconductor device'20006,153,495'Advanced methods for making semiconductor devices by low temperature direct bonding'20006,110,763'One mask, power semiconductor device fabrication process'20006,057,612'Flat power pack'20005,995,349'Protection device for solid state switched power electronics'19995,777,346'Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench'19985,757,036'Semiconductor device with improved turn-off capability'19985,654,226'Wafer bonding for power devices'19975,594,261'Device for isolating parallel sub-elements with reverse conducting diode regions'19975,585,310'Methods of mass production of semiconductor devices'19965,577,656'Method of packaging a semiconductor device'19965,532,635'Voltage clamp circuit and method'19965,521,436'Semiconductor device with a foil-sealed lid'19965,517,058'Semiconductor package and method with vertically extended electrode leads'19965,497,013'Semi-conductor chip having interdigitated gate runners with gate bonding pads'19965,473,193'Package for parallel subelement semiconductor devices'19955,468,668'Method of forming MOS-gated semiconductor devices having mesh geometry pattern'19955,463,344'Fast turn on switch circuit with parallel MOS controlled thyristor and silicon controlled rectifier'19955,446,316'Hermetic package for a high power semiconductor device'19955,424,563'Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices'19955,399,892'Mesh geometry for MOS-gated semiconductor devices'19955,366,932'Semi-conductor chip packaging method and semi-conductor chip having interdigitated gate runners with gate bonding pads'19945,350,935'Semiconductor device with improved turn-off capability'19945,260,590'Field effect transistor controlled thyristor having improved turn-on characteristics'19935,248,901'Semiconductor devices and methods of assembly thereof'19935,209,390'Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid'19935,208,575'Apparatus for coordinated triggering of chemically augmented electrical fuses'19935,166,773'Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid'19925,139,972'Batch assembly of high density hermetic packages for power semiconductor chips'19925,135,890'Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip'19925,111,268'Semiconductor device with improved turn-off capability'19925,105,536'Method of packaging a semiconductor chip in a low inductance package'19925,103,290'Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip'19925,082,795'Method of fabricating a field effect semiconductor device having a self-aligned structure'19925,041,896'Symmetrical blocking high voltage semiconductor device and method of fabrication'19915,028,987'High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip'19914,999,684'Symmetrical blocking high voltage breakdown semiconducotr device'19914,980,741'MOS protection device'19904,958,211'MCT providing turn-off control of arbitrarily large currents'19904,941,026'Semiconductor devices exhibiting minimum on-resistance'19904,927,772'Method of making high breakdown voltage semiconductor device'19904,908,687'Controlled turn-on thyristor'19904,904,609'Method of making symmetrical blocking high voltage breakdown semiconductor device'19904,905,075'Hermetic semiconductor enclosure'19904,885,630'High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop'19894,857,977'Lateral metal-oxide-semiconductor controlled triacs'19894,821,095'Insulated gate semiconductor device with extra short grid and method of fabrication'19894,816,892'Semiconductor device having turn-on and turn-off capabilities'19894,814,283'Simple automated discretionary bonding of multiple parallel elements'19894,809,047'Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short'19894,739,387'Amplifying gate thyristor having high gate sensitivity and high dv/dt rating'19884,648,174'Method of making high breakdown voltage semiconductor device'19874,646,117'Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions'19874,644,637'Method of making an insulated-gate semiconductor device with improved shorting region'19874,622,572'High voltage semiconductor device having an improved DV/DT capability and plasma spreading'19864,620,211'Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices'19864,466,176'Process for manufacturing insulated-gate semiconductor devices with integral shorts'19844,430,792'Minimal mask process for manufacturing insulated-gate semiconductor devices with integral shorts'19844,417,385'Processes for manufacturing insulated-gate semiconductor devices with integral shorts'19834,374,389'High breakdown voltage semiconductor device'19834,352,118'Thyristor with segmented turn-on line for directing turn-on current'19824,327,367'Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band'19824,314,266'Thyristor with voltage breakover current control separated from main emitter by current limit region'19824,305,084'Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means'19814,261,001'Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity'19814,261,000'High voltage semiconductor device having an improved dv/dt capability'19814,259,683'High switching speed P-N junction devices with recombination means centrally located in high resistivity layer'19814,257,058'Package for radiation triggered semiconductor device and method'19814,242,690'High breakdown voltage semiconductor device'19804,219,833'Multigate light fired thyristor and method'19804,207,583'Multiple gated light fired thyristor with non-critical light pipe coupling'19804,165,517'Self-protection against breakover turn-on failure in thyristors through selective base lifetime control'19794,144,541'Light-activated semiconductor device package unit'19794,087,834'Self-protecting semiconductor device'19784,079,403'Thyristor device with self-protection against breakover turn-on failure'19784,047,219'Radiation sensitive thyristor structure with isolated detector'19774,012,761'Self-protected semiconductor device'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–1993Patents assigned to GEN ELECTRIC (42)· patent assignee history
1977–1978Based in Elnora, NY, US· patent location history
1978–1989Patents assigned to ELECTRIC POWER RES INST (10)· patent assignee history
1978–2017Based in Clifton Park, NY, US· patent location history
1981–1992Based in Jonesville, NY, US· patent location history
1987Based in Saratoga, NY, US· patent location history
1993–1999Patents assigned to HARRIS CORP (21)· patent assignee history
2000–2001Patents assigned to INTERSIL CORP (5)· patent assignee history
2013–2017Patents assigned to SILICON POWER CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GEN ELECTRIC | 42 | 1977–1993 |
| HARRIS CORP | 21 | 1993–1999 |
| ELECTRIC POWER RES INST | 10 | 1978–1989 |
| INTERSIL CORP | 5 | 2000–2001 |
| SILICON POWER CORP | 4 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Clifton Park, New York, US | 73 | 1978–2017 |
| Jonesville, New York, US | 8 | 1981–1992 |
| Elnora, New York, US | 3 | 1977–1978 |
| Saratoga, New York, US | 1 | 1987 |