A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.

Claims

26 · 3 independent · depth 3

26 granted claims

›1.independentA semiconductor switching device comprising:na control-triggered stage comprising:na plurality of semiconductor devices connected in parallel, each se…+10

›2.↳ 1The semiconductor switching device of claim 1, wherein the control-triggered stage further comprises:na breakover switch comprising a first end and a …d2+3

›6.↳ 1The semiconductor switching device of claim 1, wherein each respective auto-triggered stage further comprises:na suppressor comprising a first end and…d2

›7.↳ 1The semiconductor switching device of claim 1, wherein:neach respective auto-triggered stage comprises a respective resistor; andthe first end of the …d2

›8.↳ 1The semiconductor switching device of claim 1, wherein each breakover switch is a breakover diode.d2

›9.↳ 1The semiconductor switching device of claim 1, wherein the control-triggered stage further comprises a capacitor having a first end and a second end, …d2+1

›11.↳ 1The semiconductor switching device of claim 1, wherein each semiconductor device has a low output impedance.d2

›12.independentA semiconductor switching device comprising:na control-triggered stage comprising:na plurality of semiconductor devices connected in parallel, each se…+9

›13.↳ 12The semiconductor switching device of claim 12, wherein the control-triggered stage further comprises:na suppressor comprising a first end and a secon…d2+2

›16.↳ 12The semiconductor switching device of claim 12, wherein each breakover switch is a breakover diode.d2

›17.↳ 12The semiconductor switching device of claim 12, wherein the each auto-triggered stage further comprises:na suppressor comprising a first end and a sec…d2+1

›19.↳ 12The semiconductor switching device of claim 12, wherein each breakover switch is a breakover diode.d2

›20.↳ 12The semiconductor switching device of claim 12, wherein the control-triggered stage further comprises a capacitor having a first end and a second end,…d2+1

›22.independentA semiconductor switching device comprising:na device input;a device output;a control-triggered stage comprising:nan input;an output;a resistor;a plur…+4

A semiconductor switching device comprising:na device input;a device output;a control-triggered stage comprising:nan input;an output;a resistor;a plurality of semiconductor devices connected in parallel, each semiconductor device comprising a power input connected to the input of the control-triggered stage, a power output connected to the output of the control triggered stage, and a control input;a breakover switch comprising a first end and a second end, the first end of the breakover switch coupled to the power input of each semiconductor device of the control-triggered stage via the resistor, the second end of the breakover switch coupled to the control input of each semiconductor device of the control-triggered stage; anda control switch connected across the breakover switch, the control switch configured for turning on each semiconductor device; anda turn-off circuit coupled to the control input of each semiconductor device, the turn-off circuit configured for turning off each semiconductor device; anda plurality of auto-triggered stages, each comprising:nan input;an output;a resistor;a plurality of semiconductor devices connected in parallel, each semiconductor device of each auto-triggered stage comprising a power input connected to the input of the each auto-triggered stage, a power output connected to the output of the auto-triggered stage, and a control input; anda breakover switch comprising a first end and a second end, the first end of the breakover switch of the each auto-triggered stage coupled to the power input of each semiconductor device of the each auto-triggered stage via the resistor of the each auto-triggered stage, the second end of the breakover switch of the each auto-triggered stage coupled to the control input of each semiconductor device of the each auto-triggered stage;wherein the input of the control-triggered stage is connected to the output of one of the auto-triggered stages,wherein the output of the control-triggered stage is connected to the device output,wherein the input of each auto-triggered stage except for a highest one of the auto-triggered stages is connect to the output of a next higher one of the auto-triggered stages,wherein the input of the highest auto-triggered stage is connect to the device input, andwherein the auto-triggered stages are configured to turn on when the control-triggered stage turns on.

›23.↳ 22The semiconductor switching device of claim 22, wherein each breakover switch is a breakover diode.d2

›24.↳ 22The semiconductor switching device of claim 22, wherein:nthe control-triggered stage further comprises a suppressor comprising a first end and a secon…d2

›25.↳ 22The semiconductor switching device of claim 22, wherein the control-triggered stage further comprises a capacitor having a first end and a second end,…d2+1

Classifications

8 codes

IPC · International Patent Classification

Section H — Electricity

H03K17/12
H03K17/74
H03K17/60
H03K3/57
H03K17/04
H03K17/10

USPC · US Patent Classification

327/421327/427

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1.1 y

384 days filing → grant

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non-final + final

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Hai L Nguyen

art unit 2842 · TC 2800

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Type	Document	Date
related publication	US 20140035655 A1	6 Feb 2014

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