Inventor
Jens Schneider
Inventor
Munich, DE
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices11%
H01LSemiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y10TTechnical subjects covered by former us classification5%
C23CCoating metallic material4%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure4%
H10NElectric solid-state devices not otherwise provided for4%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,842,174Method for producing biomass which has a high exopolysaccharide content202010,756,081Avalanche diode having an enhanced defect concentration level and method of making the same202010,468,248Method for producing a self-aligning masking layer201910,241,391Method for processing a carrier, a carrier, an electronic device and a lithographic mask201910,068,893Diode-based ESD concept for DEMOS protection20189,812,438'Avalanche diode having an enhanced defect concentration level and method of making the same'20179,802,868'Shaped sintered ceramic bodies composed of Y2O3-stabilized zirconium oxide and process for producing a shaped sintered ceramic body composed of Y2O3-stabilized zirconium oxide'20179,613,812'Method for processing a carrier, a carrier, an electronic device and a lithographic mask'20179,257,523'Avalanche diode having an enhanced defect concentration level and method of making the same'20169,048,096'Diode-based ESD concept for DEMOS protection'20159,029,049'Method for processing a carrier, a carrier, an electronic device and a lithographic mask'20158,791,547'Avalanche diode having an enhanced defect concentration level and method of making the same'20148,715,910'Method for exposing an area on a substrate to a beam and photolithographic system'20148,413,101'System and method for detecting parasitic thyristors in an integrated circuit'20138,076,728'Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of production'20118,072,061'Semiconductor device with cooling element'20118,043,934'Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions'20117,986,009'Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of production'20117,985,983'Semiconductor ESD device and method of making same'20117,910,265'Reticle for use in a semiconductor lithographic system and method for modifying the same'20117,875,933'Lateral bipolar transistor with additional ESD implant'20117,838,940'Drain-extended field effect transistor'20107,828,987'Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits'20107,738,160'Optical components, illumination systems, and methods'20107,732,834'Semiconductor ESD device and method of making same'20107,709,896'ESD protection device and method'20107,678,632'MuGFET with increased thermal mass'20107,426,012'Exposure device for immersion lithography and method for monitoring parameters of an exposure device for immersion lithography'20087,410,732'Process for producing a mask'20087,097,947'Method for correcting local loading effects in the etching of photomasks'20067,087,910'Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method'20066,799,588'Apparatus for treating substrates'20046,110,336'High pressure magnetron cathode assembly and sputtering apparatus utilizing same'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to INFINEON TECHNOLOGIES AG (27)· patent assignee history
2006–2011Based in München, DE· patent location history
2010–2020Based in Munich, DE· patent location history
2010–2019Based in Moritzburg, DE· patent location history
2010–2011Based in Dresden, DE· patent location history
2011–2015Patents assigned to SCHNEIDER JENS (6)· patent assignee history
2011–2015Patents assigned to GOSSNER HARALD (3)· patent assignee history
2011–2014Patents assigned to ESMARK KAI (2)· patent assignee history
2011Patents assigned to RUSS CHRISTIAN (2)· patent assignee history
2020Based in Bielefeld, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 27 | 2006–2020 |
| SCHNEIDER JENSself | 6 | 2011–2015 |
| GOSSNER HARALD | 3 | 2011–2015 |
| ESMARK KAI | 2 | 2011–2014 |
| RUSS CHRISTIAN | 2 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 13 | 2010–2020 |
| München, DE | 7 | 2006–2011 |
| Moritzburg, DE | 5 | 2010–2019 |
| Dresden, DE | 2 | 2010–2011 |
| Bielefeld, DE | 1 | 2020 |