Inventor
Kohei Kawamura
Inventor
Nirasaki, JP
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H01JElectric discharge tubes or discharge lamps19%
C23CCoating metallic material15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H01LSemiconductor devices5%
D01FChemical features in the manufacture of artificial filaments, threads, fibres, bristles or ribbons3%
H05HPlasma technique3%
A41GArtificial flowers2%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%
C08LCompositions of macromolecular compounds2%
PatentTitleYear
10,872,779Plasma etching method and plasma etching apparatus2020D0901407Integrated type ion shield for semiconductor manufacturing apparatus2020D0900760Ion shield plate for semiconductor manufacturing apparatus202010,418,254Etching method and etching apparatus201910,388,557Placing bed structure, treating apparatus using the structure, and method for using the apparatus20199,640,388'Method for forming insulating film and method for manufacturing semiconductor device'20179,560,891'Polyester-based fiber for artificial hair and hair ornament product including the same, and method for producing the same'20179,315,922'Polyester-based fiber for artificial hair and hair ornament product including the same'20169,177,846'Placing bed structure, treating apparatus using the structure, and method for using the apparatus'20158,711,265'Image processing apparatus, control method for the same, and storage medium'20148,435,882'Film forming method for a semiconductor'20138,394,231'Plasma process device and plasma process method'20138,197,913'Film forming method for a semiconductor'20128,124,523'Fabrication method of a semiconductor device and a semiconductor device'20128,021,975'Plasma processing method for forming a film and an electronic component manufactured by the method'20118,017,197'Plasma processing method and plasma processing apparatus'20117,923,819'Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same'20117,897,205'Film forming method and film forming apparatus'20117,776,736'Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same'20107,765,466'Information processing apparatus that stores a plurality of image data items having different data-formats and communicates with an external apparatus via a network, and method therefor'20107,717,061'Gas switching mechanism for plasma processing apparatus'20107,704,893'Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD'20107,612,000'Modacrylic shrinkable fiber and method for manufacturing the same'20097,601,402'Method for forming insulation film and apparatus for forming insulation film'20097,307,019'Method for supercritical carbon dioxide processing of fluoro-carbon films'20077,186,806'Process for producing regenerated collagen fiber and process for setting the same'20076,949,829'Semiconductor device and fabrication method therefor'20056,311,908'Crushing method for waste containing materials unfit for crushing and apparatus for its practice'20016,155,200'ECR plasma generator and an ECR system using the generator'20005,958,258'Plasma processing method in semiconductor processing system'19995,531,834'Plasma film forming method and apparatus and plasma processing apparatus'19965,522,934'Plasma processing apparatus using vertical gas inlets one on top of another'19965,476,182'Etching apparatus and method therefor'19955,308,791'Method and apparatus for processing surface of semiconductor layer'19945,290,609'Method of forming dielectric film for semiconductor devices'19945,252,892'Plasma processing apparatus'19935,101,110'Ion generator'19925,089,747'Electron beam excitation ion source'19925,083,061'Electron beam excited ion source'19925,028,791'Electron beam excitation ion source'19914,749,912'Ion-producing apparatus'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988–2019Patents assigned to TOKYO ELECTRON LTD (28)· patent assignee history
1988–2013Based in Nirasaki, JP· patent location history
1994–2020Based in Tokyo, JP· patent location history
1995–2011Based in Yamanashi, JP· patent location history
2009–2017Patents assigned to KANEKA CORP (3)· patent assignee history
2011–2019Based in Hillsboro, OR, US· patent location history
2012–2015Patents assigned to KAWAMURA KOHEI (6)· patent assignee history
2012–2013Patents assigned to MATSUOKA TAKAAKI (3)· patent assignee history
2017Based in Osaka, JP· patent location history
2019–2020Patents assigned to HITACHI HIGH TECH CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 28 | 1988–2019 |
| KAWAMURA KOHEIself | 6 | 2012–2015 |
| HITACHI HIGH TECH CORP | 4 | 2019–2020 |
| KANEKA CORP | 3 | 2009–2017 |
| MATSUOKA TAKAAKI | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nirasaki, JP | 14 | 1988–2013 |
| Tokyo, JP | 7 | 1994–2020 |
| Yamanashi, JP | 7 | 1995–2011 |
| Hillsboro, OR, US | 6 | 2011–2019 |
| Osaka, JP | 1 | 2017 |