Inventor
Jen-Cheng Liu
Inventor
Hsinchu, TW
Overview
Patents· 267 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation29%
H01LSemiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10DInorganic electric semiconductor devices6%
H04NPictorial communication, e.g. television2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
G02BOptical elements, systems or apparatus1%
E05BLocks1%
PatentTitleYear
11,034,578Multi-layer sealing film for high seal yield202110,879,297Image sensor device and method of forming same202010,861,894Multiple deep trench isolation (MDTI) structure for CMOS image sensor202010,861,899Interconnect structure for stacked device and method202010,825,853Semiconductor image sensor device with deep trench isolations and method for manufacturing the same202010,811,398Semiconductor structure and method for manufacturing the same202010,804,155Inductor structure for integrated circuit202010,797,091Semiconductor imaging device having improved dark current performance202010,790,194Inductor structure for integrated circuit202010,790,327Semiconductor device structure with a conductive feature passing through a passivation layer202010,790,265Semiconductor device structure with back-side layer to reduce leakage202010,777,590Method for forming image sensor device structure with doping layer in light-sensing region202010,763,292Interconnect apparatus and method for a stacked semiconductor device202010,734,423Semiconductor switching device separated by device isolation202010,734,428Image sensor device202010,727,265Multiple deep trench isolation (MDTI) structure for CMOS image sensor202010,727,164Semiconductor structure and manufacturing method for the same202010,727,205Hybrid bonding technology for stacking integrated circuits202010,682,523Interconnect structure and method of forming same202010,680,027Stacked semiconductor dies with a conductive feature passing through a passivation layer202010,672,819Mechanisms for forming image-sensor device with deep-trench isolation structure202010,629,592Through silicon via design for stacking integrated circuits202010,622,394Image sensing device202010,566,288Structure for standard logic performance improvement having a back-side through-substrate-via202010,566,378Back side illuminated image sensor with reduced sidewall-induced leakage202010,535,696Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips202010,535,706Interconnect structure for stacked device and method202010,535,697Structure and method for 3D Image sensor202010,522,525Semiconductor device structure201910,515,994Semiconductor devices, methods of manufacturing thereof, and image sensor devices201910,510,912Image sensor device and method201910,510,790High-k dielectric liners in shallow trench isolations201910,510,7293DIC interconnect apparatus and method201910,510,791Elevated photodiode with a stacked scheme201910,510,592Integrated circuit (IC) structure for high performance and functional density201910,510,7923DIC seal ring structure and methods of forming same201910,510,542Gate electrodes with notches and methods for forming the same201910,504,784Inductor structure for integrated circuit201910,475,828Image sensor device structure with doping layer in light-sensing region201910,475,843Method and apparatus for image sensor packaging201910,468,443Pixel structure of image sensor and method of forming same201910,468,441Semiconductor switching device separated by device isolation201910,461,109Multiple deep trench isolation (MDTI) structure for CMOS image sensor201910,361,233High-k dielectric liners in shallow trench isolations201910,304,886Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor201910,304,889Image sensor device and manufacturing method thereof201910,304,818Method of manufacturing semiconductor devices having conductive plugs with varying widths201910,290,671Image sensor device and method of forming same201910,276,619Semiconductor device structure with a conductive feature passing through a passivation layer201910,276,622Mechanisms for forming image-sensor device with expitaxial isolation feature201910,269,840Image sensing device and manufacturing method thereof201910,269,848Image sensor having enhanced backside illumination quantum efficiency201910,269,863Methods and apparatus for via last through-vias201910,192,918Image sensor including dual isolation and method of making the same201910,177,186Pixel structure of image sensor and method of forming same201910,163,973Method for forming the front-side illuminated image sensor device structure with light pipe201810,163,956Interconnect apparatus and method201810,163,758Semiconductor structure and manufacturing method for the same201810,163,951Image sensor device201810,164,133Image sensor device and method201810,163,878Semiconductor structure and method for manufacturing the same201810,157,959Interconnect structure for stacked device and method201810,157,958Vertically integrated image sensor chips and methods for forming the same201810,157,8913DIC interconnect apparatus and method201810,153,316Mechanisms for forming image sensor device with deep-trench isolation structure201810,147,682Structure for stacked logic performance improvement201810,141,358Semiconductor switching device separated by device isolation201810,134,794Image sensor chip sidewall interconnection201810,128,304Isolation for semiconductor devices201810,121,812Stacked substrate structure with inter-tier interconnection201810,096,515Interconnect structure for stacked device201810,096,645Method and apparatus for image sensor packaging201810,092,768Interconnect structure and method of forming same201810,090,353Semiconductor devices, methods of manufacturing thereof, and image sensor devices201810,090,349CMOS image sensor chips with stacked scheme and methods for forming the same201810,062,728Image sensor device and method201810,062,721Elevated photodiode with a stacked scheme201810,056,3533DIC interconnect apparatus and method201810,049,981Through via structure, semiconductor device and manufacturing method thereof201810,008,532Implant isolated devices and method for forming the same20189,978,805Method for manufacturing image sensor structure having wide contact20189,935,147Deep trench isolation structure in image sensor device20189,929,198'Infrared image sensor'20189,923,011'Semiconductor device structure with stacked semiconductor dies'20189,917,123'Method and apparatus for image sensor packaging'20189,905,426'Gate electrodes with notches and methods for forming the same'20189,887,234'CMOS image sensor and method for forming the same'20189,875,989Semiconductor device structure20189,865,645'Interconnect structure for stacked device and method'20189,859,322'Methods and apparatus for glass removal in CMOS image sensors'20189,847,368Vertically integrated image sensor chips and methods for forming the same20179,837,464Backside structure and methods for BSI image sensors20179,818,735'Method of manufacturing a semiconductor device'20179,812,409'Seal ring structure with a metal pad'20179,812,482'Frontside illuminated (FSI) image sensor with a reflector'20179,812,487'Structure and method for 3D image sensor'20179,806,119'3DIC seal ring structure and methods of forming same'20179,786,592'Integrated circuit structure and method of forming the same'20179,780,137'Mechanisms for forming image-sensor device with epitaxial isolation feature'20179,780,134'Semiconductor device and method of forming the same'20179,773,828'Image sensor device and method of forming same'20179,764,153'Interconnect structure and method of forming same'20179,761,629'Image sensor device and method'20179,754,925'3DIC interconnect apparatus and method'20179,748,304'Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods'20179,747,973'Solid state storage device and data writing method to prevent data loss during program cycle'20179,722,109'Image sensor device and method'20179,704,910'Semiconductor switching device separated by device isolation'20179,699,897'Pad structure'20179,673,246'Dual metal for a backside package of backside illuminated image sensor'20179,673,245'Implant isolated devices and method for forming the same'20179,666,630'Semiconductor devices, methods of manufacturing thereof, and image sensor devices'20179,666,624'Mechanisms for forming image-sensor device with deep-trench isolation structure'20179,659,987'Approach for reducing pixel pitch using vertical transfer gates and implant isolation regions'20179,653,508'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'20179,640,582'Method of manufacturing image sensor having enhanced backside illumination quantum efficiency'20179,634,053'Image sensor chip sidewall interconnection'20179,627,430'Method and apparatus for low resistance image sensor contact'20179,620,548'Image sensor with wide contact'20179,613,996'Backside structure and methods for BSI image sensors'20179,576,999'Backside structure and methods for BSI image sensors'20179,570,497'Back side illuminated image sensor having isolated bonding pads'20179,570,431'Semiconductor wafer for integrated packages'20179,570,503'Ridge structure for back side illuminated image sensor'20179,559,244'CMOS image sensors and methods for forming the same'20179,553,020'Interconnect structure for connecting dies and methods of forming the same'20179,536,777'Interconnect apparatus and method'20179,536,915'Image sensor with embedded infrared filter layer'20179,530,811'Elevated photodiode with a stacked scheme'20169,525,003'Structure and method for 3D image sensor'20169,520,433'Method of fabricating deep trench isolation structure in image sensor and device thereof'20169,455,288'Image sensor structure to reduce cross-talk and improve quantum efficiency'20169,443,836'Forming pixel units of image sensors through bonding two chips'20169,412,719'3DIC interconnect apparatus and method'20169,412,725'Method and apparatus for image sensor packaging'20169,406,715'Image sensor device'20169,406,711'Apparatus and method for backside illuminated image sensors'20169,406,712'Interconnect structure for connecting dies and methods of forming the same'20169,401,380'Backside structure and methods for BSI image sensors'20169,379,093'Method and apparatus for image sensor packaging'20169,374,538'Image sensor with embedded infrared filter layer'20169,373,657'System and method for fabricating a 3D image sensor structure'20169,368,545'Elevated photodiodes with crosstalk isolation'20169,362,329'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'20169,356,058'Backside structure for BSI image sensor'20169,356,069'Photo diode and method of forming the same'20169,355,888'Implant isolated devices and method for forming the same'20169,356,066'Interconnect structure for stacked device and method'20169,337,235'Method and apparatus for image sensor packaging'20169,324,761'Method of making image sensor devices having a concave reflective shield'20169,318,528'Image sensor device and method'20169,318,370'High-k dielectric liners in shallow trench isolations'20169,318,526'Mechanisms for forming image-sensor device with deep-trench isolation structure'20169,312,294'Semiconductor devices, methods of manufacturing thereof, and image sensor devices'20169,305,966'Backside structure and method for BSI image sensors'20169,293,502'Semiconductor switching device separated by device isolation'20169,287,310'Methods and apparatus for glass removal in CMOS image sensors'20169,287,312'Imaging sensor structure and method'20169,281,334'Pickup device structure within a device isolation region'20169,263,272'Gate electrodes with notches and methods for forming the same'20169,245,912'Method and apparatus for low resistance image sensor contact'20169,224,770'Image sensor device and method'20159,196,547'Dual shallow trench isolation and related applications'20159,196,646'Method for reducing crosstalk in image sensors using implant technology'20159,184,207'Pad structures formed in double openings in dielectric layers'20159,177,986'Isolation for semiconductor devices'20159,165,970'Back side illuminated image sensor having isolated bonding pads'20159,159,852'Image sensor device and method'20159,153,565'Image sensors with a high fill-factor'20159,147,702'Image sensor for mitigating dark current'20159,147,703'CMOS image sensor structure'20159,142,690'Semiconductor device having a bonding pad and shield structure and method of manufacturing the same'20159,142,586'Pad design for backside illuminated image sensor'20159,136,302'Apparatus for vertically integrated backside illuminated image sensors'20159,136,298'Mechanisms for forming image-sensor device with deep-trench isolation structure'20159,123,615'Vertically integrated image sensor chips and methods for forming the same'20159,123,617'Elevated photodiode with a stacked scheme'20159,117,879'Semiconductor device and manufacturing method thereof'20159,076,708'CMOS image sensors and methods for forming the same'20159,076,715'Interconnect structure for connecting dies and methods of forming the same'20159,064,989'Photo diode and method of forming the same'20159,064,986'Photo diode and method of forming the same'20159,059,061'Structure and method for 3D image sensor'20159,048,162'CMOS image sensors and methods for forming the same'20159,040,891'Image device and methods of forming the same'20159,041,841'Image sensor having enhanced backside illumination quantum efficiency'20159,041,206'Interconnect structure and method'20159,035,445'Seal ring structure with a metal pad'20159,029,183'Method and apparatus for image sensor packaging'20159,013,022'Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips'20158,987,855'Pad structures formed in double openings in dielectric layers'20158,981,510'Ridge structure for back side illuminated image sensor'20158,969,991'Backside structure and methods for BSI image sensors'20158,962,375'Method of making a reflective shield'20158,957,358'CMOS image sensor chips with stacked scheme and methods for forming the same'20158,952,497'Scribe lines in wafers'20158,946,784'Method and apparatus for image sensor packaging'20158,946,849'BSI image sensor chips with separated color filters and methods for forming the same'20158,941,204'Apparatus and method for reducing cross talk in image sensors'20158,933,527'Elevated photodiodes with crosstalk isolation'20158,900,966'Alignment for backside illumination sensor'20148,895,349'Backside illuminated image sensor having capacitor on pixel region'20148,883,544'Method of forming an image device'20148,878,325'Elevated photodiode with a stacked scheme'20148,878,242'Pickup device structure within a device isolation region'20148,816,457'Sensor structure for optical performance enhancement'20148,810,700'Front side implanted guard ring structure for backside'20148,809,098'Back side defect reduction for back side illuminated image sensor'20148,802,538'Methods for hybrid wafer bonding'20148,766,387'Vertically integrated image sensor chips and methods for forming the same'20148,736,006'Backside structure for a BSI image sensor device'20148,710,612'Semiconductor device having a bonding pad and shield structure of different thickness'20148,710,607'Method and apparatus for image sensor packaging'20148,709,854'Backside structure and methods for BSI image sensors'20148,685,820'Multiple gate dielectric structures and methods of forming the same'20148,674,467'Image sensor and method of fabricating same'20148,669,135'System and method for fabricating a 3D image sensor structure'20148,664,736'Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same'20148,629,524'Apparatus for vertically integrated backside illuminated image sensors'20148,629,523'Inserted reflective shield to improve quantum efficiency of image sensors'20148,614,495'Back side defect reduction for back side illuminated image sensor'20138,604,405'Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same'20138,569,807'Backside illuminated image sensor having capacitor on pixel region'20138,564,085'CMOS image sensor structure'20138,558,351'Alignment for backside illumination sensor'20138,531,565'Front side implanted guard ring structure for backside illuminated image sensor'20138,513,587'Image sensor with anti-reflection layer and method of manufacturing the same'20138,502,389'CMOS image sensor and method for forming the same'20138,461,021'Multiple seal ring structure'20138,460,979'Method of fabricating a backside illuminated image sensor'20138,455,971'Apparatus and method for improving charge transfer in backside illuminated image sensor'20138,440,540'Method for doping a selected portion of a device'20138,440,495'Method for reducing crosstalk in image sensors using implant technology'20138,435,824'Backside illumination sensor having a bonding pad structure and method of making the same'20138,405,182'Back side illuminated image sensor with improved stress immunity'20138,390,089'Image sensor with deep trench isolation structure'20138,377,733'Antireflective layer for backside illuminated image sensor and method of manufacturing same'20138,338,917'Multiple seal ring structure'20128,293,122'Dual metal for a backside package of backside illuminated image sensor'20128,283,754'Seal ring structure with metal pad'20128,278,152'Bonding process for CMOS image sensor'20128,227,899'Alignment for backside illumination sensor'20128,227,288'Image sensor and method of fabricating same'20128,222,710'Sensor structure for optical performance enhancement'20128,202,791'Method for generating two dimensions for different implant energies'20128,164,124'Photodiode with multi-epi films for image sensor'20127,968,424'Method of implantation'20117,588,993'Alignment for backside illumination sensor'20097,423,306'CMOS image sensor devices'20086,995,085'Underlayer protection for the dual damascene etching'20066,909,675'Method for switching an optical disc apparatus to different accessing speeds'20056,884,728'Method for removing polymeric residue contamination on semiconductor feature sidewalls'20056,828,251'Method for improved plasma etching control'20046,790,770'Method for preventing photoresist poisoning'20046,727,183'Prevention of spiking in ultra low dielectric constant material'20046,429,119'Dual damascene process to reduce etch barrier thickness'20026,399,483'Method for improving faceting effect in dual damascene process'20026,383,943'Process for improving copper fill integrity'20026,323,121'Fully dry post-via-etch cleaning method for a damascene process'20016,319,821'Dual damascene approach for small geometry dimension'20016,309,962'Film stack and etching sequence for dual damascene'20016,297,168'Edge defect inhibited trench etch plasma etch method'20016,242,362'Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask'20016,225,203'PE-SiN spacer profile for C2 SAC isolation window'20016,211,063'Method to fabricate self-aligned dual damascene structures'20016,211,061'Dual damascene process for carbon-based low-K materials'20016,140,218'Method for fabricating a T-shaped hard mask/conductor profile to improve self-aligned contact isolation'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (123)· patent assignee history
2000–2002Based in Chia I, TW· patent location history
2001–2006Based in Chiayi, TW· patent location history
2004–2020Based in Hsinchu, TW· patent location history
2012–2016Patents assigned to LIU JEN-CHENG (59)· patent assignee history
2012–2016Patents assigned to YAUNG DUN-NIAN (57)· patent assignee history
2012–2016Patents assigned to WANG WEN-DE (26)· patent assignee history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (141)· patent assignee history
2016–2020Based in Hsinchu County, TW· patent location history
2016–2018Based in Zhubei City, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 141 | 2015–2021 |
| TAIWAN SEMICONDUCTOR MFG | 123 | 2000–2016 |
| LIU JEN-CHENGself | 59 | 2012–2016 |
| YAUNG DUN-NIAN | 57 | 2012–2016 |
| WANG WEN-DE | 26 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 233 | 2004–2020 |
| Chia I, TW | 9 | 2000–2002 |
| Hsinchu County, TW | 7 | 2016–2020 |
| Chiayi, TW | 6 | 2001–2006 |
| Zhubei City, TW | 3 | 2016–2018 |