Method and apparatus for image sensor packaging

A sensor device, comprising:na substrate with a front side and a backside, the front side having a first surface area;a first column of pixels comprising a first pixel and a second pixel within the substrate;a first bond pad located at a top metal layer at the front side of the substrate connected to the first pixel and the second pixel by a first inter metal line, the first inter metal line extending in a first direction;a second bond pad located at the top metal layer;a plurality of dummy pads on the front side of the substrate, the plurality of dummy pads having a cumulative surface area of less than about 40% of the first surface area, at least one dummy pad being interjacent the first bond pad and the second bond pad; anda through via extending through the substrate and electrically connecting the second bond pad to a contact disposed on the backside of the substrate.

An integrated circuit (IC) device, comprising:na sensor device comprising:na substrate with a front side and a backside;a first column of pixels comprising a first pixel and a second pixel within the substrate;a first bond pad located at a first top metal layer of a first intermetal dielectric (IMD) layer disposed at the front side of the substrate connected to the first pixel and the second pixel by a first inter metal line; anda plurality of dummy pads in the first top metal layer of the first IMD, wherein a dummy pad is not connected to any functional circuit of the sensor device; andan application specific integrated circuit (ASIC) chip comprising a plurality of bond pads disposed in a second top metal layer of a second IMD layer, wherein the first bond pad of the sensor device is bonded to a bond pad of the plurality of bond pads of the ASIC in a one-to-one aligned fashion;wherein the first IMD layer directly contacts the second IMD layer; andwherein the second IMD layer directly contacts a surface of one of the plurality of dummy pads, wherein the surface of the one of the plurality of dummy pads is substantially level with an interface between the sensor device and the ASIC chip.

An integrated circuit (IC) device, comprising:na sensor device comprising:na substrate with a front side having a first surface area and a backside;a first column of pixels comprising a first pixel and a second pixel within the substrate;a first plurality of bond pads located at a first top metal layer at the front side of the substrate connected to the first pixel and the second pixel by a first inter metal line;a first top dielectric layer; anda plurality of dummy pads located at the first top metal layer and electrically insulated from the first pixel and second pixel, the plurality of dummy pads having a cumulative surface area of less than about 40% of the first surface area; anda die comprising a second plurality of bond pads and a second top dielectric layer, wherein each bond pad of the second plurality of bond pads is bonded to a respective bond pad of the first plurality of bond pads of the die, and wherein the first top dielectric layer directly contacts the second top dielectric layer, and wherein the second top dielectric layer contacts the dummy pad.