LexDanaLexDanabeta
Inventor

Shigeki Komori

Inventor
Isehara, JP

Overview

91→
Patents
1977–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 91 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices31%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein13%
H01LSemiconductor devices11%
H10BElectronic memory devices6%
H10KOrganic electric solid-state devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G05BControl or regulating systems in general2%
PatentTitleYear
11,024,763Semiconductor device and method for manufacturing the same202110,877,338Display device202010,852,576Display device202010,756,080Semiconductor device including protection circuit202010,559,599Display device202010,559,598Display device202010,437,091Display device201910,367,006Display Device201910,254,607Display device201910,236,303Semiconductor device having oxide semiconductor layer201910,229,904Display device including oxide semiconductor layer201910,181,545Semiconductor device and method for manufacturing the same201910,074,646Display device201810,032,796Display device201810,018,887Display device20189,915,843'Display device with pixel including capacitor'20189,703,157'Display device'20179,570,470'Display device'20179,478,597'Semiconductor device'20169,366,894'Display device'20169,343,517'Display device'20169,257,594'Thin film transistor with an oxide semiconductor layer'20169,196,633'Display device'20159,130,067'Display device'20159,097,925'Display device'20159,082,688'Display device'20159,048,320'Display device including oxide semiconductor layer'20159,024,309'Display device'20158,941,114'Display device including protective circuit'20158,772,773'Display device including protective circuit'20148,674,371'Display device'20148,501,555'Semiconductor device and manufacturing method thereof'20138,427,595'Display device with pixel portion and common connection portion having oxide semiconductor layers'20138,389,988'Display device'20138,389,993'Display device having a buffer layer formed over a channel protective layer'20138,368,066'Display device'20138,361,820'Manufacturing method of a liquid crystal display device'20138,334,540'Display device'20128,304,765'Display device'20128,227,278'Methods for manufacturing thin film transistor and display device'20128,148,723'Light-emitting device and manufacturing method thereof'20128,133,771'Display device and manufacturing method of the same'20128,101,442'Method for manufacturing EL display device'20128,049,221'Liquid crystal display device'20117,993,991'Manufacturing method of thin film transistor and manufacturing method of display device'20117,989,815'Display device'20117,985,605'Light-emitting device and manufacturing method thereof'20117,947,538'Semiconductor device and manufacturing method thereof'20117,768,009'Display device and manufacturing method of the same'20107,608,490'Semiconductor device and manufacturing method thereof'20097,579,220'Semiconductor device manufacturing method'20097,396,764'Manufacturing method for forming all regions of the gate electrode silicided'20086,855,615'Method of manufacturing semiconductor device having an improved isolation structure'20056,844,228'Manufacturing method of a semiconductor device capable of accurately setting a resistance value of a resistance element'20056,747,323'Static semiconductor memory device'20046,667,526'Tunneling magnetoresistive storage unit'20036,555,885'Semiconductor device and method of manufacturing the same'20036,552,926'Magnetic random-access memory'20036,507,079'Static semiconductor memory device'20036,492,674'Semiconductor device having an improved plug structure and method of manufacturing the same'20026,452,246'Semiconductor device having an improved isolation structure, and method of manufacturing the semiconductor device'20026,448,630'Semiconductor device comprising a polish preventing pattern'20026,420,763'Semiconductor device having a retrograde well structure and method of manufacturing thereof'20025,978,294'Memory cell evaluation semiconductor device, method of fabricating the same and memory cell evaluation method'19995,852,327'Semiconductor device'19985,652,168'Method of forming a semiconductor device having a capacitor with improved element isolation and operation rate'19975,598,019'Semiconductor device having trench isolation structure and method of manufacturing the same'19975,536,665'Method of manufacturing a semiconductor device with double structured well'19965,478,761'Method of producing semiconductor device having first and second type field effect transistors'19955,473,016'Matte film or sheet and method for preparing same'19955,457,339'Semiconductor device for element isolation and manufacturing method thereof'19955,455,437'Semiconductor device having crystalline defect isolation regions'19955,448,093'Micro MIS type FET and manufacturing process therefor'19955,446,305'Semiconductor device with double structured well'19955,412,237'Semiconductor device with improved element isolation and operation rate'19955,401,671'Method of manufacturing a semiconductor device'19955,330,923'Manufacturing process for a micro MIS type FET'19945,296,401'MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof'19945,293,060'Semiconductor device with diffusion well isolation'19945,208,473'Lightly doped MISFET with reduced latchup and punchthrough'19935,196,908'Micro MIS type FET and manufacturing process therefor'19935,141,882'Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor'19925,138,420'Semiconductor device having first and second type field effect transistors separated by a barrier'19925,045,901'Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions'19915,019,520'Method for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthrough'19914,978,629'Method of making a metal-oxide-semiconductor device having shallow source and drain diffused regions'19904,793,956'Process for preparing porous film or sheet'19884,770,229'Horizontal type continuous casting machine for casting molten steel into cast steel strand'19884,660,618'Flow stop control method and apparatus for casting withdrawal control of horizontal continuous casting machine'19874,522,540'Method and apparatus for removing cutting burr sticking to lower surface of slab'19854,010,792'Method for continuously casting steel'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2003Patents assigned to MITSUBISHI ELECTRIC CORP (30)· patent assignee history
1990–2004Based in Hyogo, JP· patent location history
1998–2008Based in Tokyo, JP· patent location history
2009–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (49)· patent assignee history
2009–2013Based in Kanagawa, JP· patent location history
2011–2021Based in Isehara, JP· patent location history
2012–2016Patents assigned to KOMORI SHIGEKI (18)· patent assignee history
2012–2016Patents assigned to YAMAZAKI SHUNPEI (14)· patent assignee history
2012–2016Patents assigned to AKIMOTO KENGO (12)· patent assignee history
2015–2020Based in Tochigi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR ENERGY LAB492009–2021
MITSUBISHI ELECTRIC CORP301990–2003
KOMORI SHIGEKIself182012–2016
YAMAZAKI SHUNPEI142012–2016
AKIMOTO KENGO122012–2016
Locations
LocationPatentsSpan
Isehara, JP332011–2021
Hyogo, JP231990–2004
Kanagawa, JP112009–2013
Tokyo, JP111998–2008
Tochigi, JP62015–2020