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Inventor

Shigeru Komatsu

Inventor
Yokohama, JP

Overview

51→
Patents
1977–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
G09GArrangements or circuits for control of indicating devices using static means to present variable information9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H04NPictorial communication, e.g. television7%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles3%
A61CDentistry2%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
B60YIndexing scheme relating to aspects cross-cutting vehicle technology2%
PatentTitleYear
9,943,023Lift control apparatus for ground work apparatus20189,759,319'Traveling work vehicle'20179,725,090'Speed control for working vehicle'20179,670,939'Operation control system'20177,702,413'Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator'20107,643,089'Decoder device and receiver using the same'20107,623,937'Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator'20097,375,761'Receiver having motion picture data decoder'20087,272,460'Method for designing a manufacturing process, method for providing manufacturing process design and technology computer-aided design system'20076,710,817'Decoder device and receiver using the same'20046,452,638'Decoder device and receiver using the same'20026,310,654'Decoder device and receiver using the same'20015,986,327'Bipolar type diode'19995,179,642'Image synthesizing apparatus for superposing a second image on a first image'19935,006,070'Dental implant with y-shaped body'19914,980,765'Frame buffer memory for display'19904,888,306'Method of manufacturing a bipolar transistor'19894,882,290'Semiconductor device and a method of manufacturing the same'19894,879,252'Semiconductor device and a method of manufacturing the same'19894,824,799'Method of making a bipolar semiconductor device'19894,802,847'Dental implant'19894,732,872'Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide'19884,710,241'Method of making a bipolar semiconductor device'19874,692,190'Trimming of metal interconnection layer by selective migration of metal atoms by energy beams'19874,677,427'Display control circuit'19874,638,497'Framing code detector for a teletext receiver'19874,591,845'Character and graphic signal generating apparatus'19864,589,936'Method for fabricating a semiconductor device by co-diffusion of arsenic and phosphorus'19864,577,397'Method for manufacturing a semiconductor device having vertical and lateral transistors'19864,516,147'Semiconductor device having a substrate covered with a high impurity concentration first polycrystalline layer and then a lower impurity concentration second polycrystalline layer'19854,484,212'Semiconductor device'19844,467,312'Semiconductor resistor device'19844,451,844'Polysilicon emitter and base contacts separated by lightly doped poly separator'19844,438,556'Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions'19844,423,434'Semiconductor device having two or more semiconductor elements with paired characteristics regularly arranged in a semiconductor substrate'19834,417,318'Arrangement for control of the operation of a random access memory in a data processing system'19834,408,197'Pattern display apparatus'19834,404,552'Display device for both a character display and a graphic display'19834,388,707'Memory selecting system'19834,388,621'Drive circuit for character and graphic display device'19834,368,461'Digital data processing device'19834,298,883'Plastic material package semiconductor device having a mechanically stable mounting unit for a semiconductor pellet'19814,279,671'Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition'19814,272,304'Method of manufacturing a semiconductor device'19814,261,765'Method of manufacturing a semiconductor device'19814,236,832'Strain insensitive integrated circuit resistor pair'19804,224,088'Method for manufacturing a semiconductor device'19804,210,689'Method of producing semiconductor devices'19804,119,167'Steering drive axle assembly'19784,118,402'Preparation of maleic anhydride'19784,036,780'Catalyst for the preparation of maleic anhydride'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1978Based in Himeji, JP· patent location history
1978–2018Based in Osaka, JP· patent location history
1980–1989Patents assigned to TOKYO SHIBAURA ELECTRIC CO (17)· patent assignee history
1980–2010Based in Yokohama, JP· patent location history
1983–2010Patents assigned to HITACHI LTD (16)· patent assignee history
1986–2010Based in Kamakura, JP· patent location history
1987–2010Patents assigned to TOSHIBA KK (8)· patent assignee history
1987–1989Based in Kitakyushu, JP· patent location history
2001–2010Patents assigned to HITACHI ULSI SYS CO LTD (5)· patent assignee history
2017–2018Patents assigned to KUBOTA KK (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO SHIBAURA ELECTRIC CO171980–1989
HITACHI LTD161983–2010
TOSHIBA KK81987–2010
HITACHI ULSI SYS CO LTD52001–2010
KUBOTA KK42017–2018
Locations
LocationPatentsSpan
Yokohama, JP311980–2010
Osaka, JP51978–2018
Kamakura, JP51986–2010
Kitakyushu, JP51987–1989
Himeji, JP21977–1978