The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.

Claims

17 · 2 independent · depth 3

17 granted claims

›1.independentA semiconductor device manufacturing system comprising:na processing apparatus to perform a process on a semiconductor substrate;a process control app…+8

›2.↳ 1The semiconductor device manufacturing system of claim 1, wherein a calculated value of the oxide film thickness by the oxide film thickness calculati…d2

›3.↳ 1The semiconductor device manufacturing system of claim 1, wherein chamber number information is added to equipment engineering system data to be proce…d2

›4.↳ 1The semiconductor device manufacturing system of claim 1, wherein the oxide film thickness calculation section is provided inside of the real time sim…d2

›5.↳ 1The semiconductor device manufacturing system of claim 1, wherein the real time simulator integrates with the internal information from the arrival ti…d2

›6.↳ 1The semiconductor device manufacturing system of claim 1, wherein the real time simulator is configured to monitor an end point appearance region of t…d2

›7.↳ 1The semiconductor device manufacturing system of claim 1, wherein the process control apparatus is configured to receive a process start command from …d2+1

›9.↳ 1The semiconductor device manufacturing system of claim 1, wherein the processing apparatus includes at least one of:na film formation processing appar…d2

›10.independentA method for manufacturing a semiconductor device, comprising:nprocessing a semiconductor substrate by a processing apparatus;controlling operation of…+7

›11.↳ 10The method of claim 10, wherein a calculated value of the oxide film thickness by the oxide film thickness calculation section is integrated over a pe…d2

›12.↳ 10The method of claim 10, wherein chamber number information is added to equipment engineering system data to be processed by a computer and, in a case …d2

›13.↳ 10The method of claim 10, wherein the oxide film thickness calculation section is provided inside of the real time simulator.d2

›14.↳ 10The method of claim 10, wherein the process processing simulation is integrated with internal information from an arrival time of a processing stop si…d2

›15.↳ 10The method of claim 10, wherein the simulation is monitoring an end point appearance region of the semiconductor substrate, and estimating a progress …d2+1

›17.↳ 10The method of claim 10, wherein the processing apparatus includes at least one of:na film formation processing apparatus for conducting a film formati…d2

Classifications

3 codes

IPC · International Patent Classification

Section G — Physics

G06F19/00

USPC · US Patent Classification

700/121438/770

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Pendency

5.2 y

1,903 days filing → grant

Office actions

non-final + final

Responses

2 RCE

Examiner

Ryan A Jarrett

art unit 2121 · TC 2100

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Citations: 19 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20050095774 A1	5 May 2005

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