Inventor
Arthur V. Pohm
Inventor
Ames, IA, US
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores24%
B82YSpecific uses or applications of nanostructures19%
H10BElectronic memory devices19%
H01FMagnets12%
H10NElectric solid-state devices not otherwise provided for12%
G11BInformation storage based on relative movement between record carrier and transducer6%
G01RMeasuring electric variables5%
Y10TTechnical subjects covered by former us classification2%
H01LSemiconductor devices1%
PatentTitleYear
RE047583Circuit selection of magnetic memory cells and related cell structures2019RE044878'Current switched magnetoresistive memory cell'20147,813,165'Magnetic memory layers thermal pulse transitions'20107,266,013'Magnetic memory layers thermal pulse transitions'20077,177,178'magnetic memory layers thermal pulse transitions'20077,148,531'Magnetoresistive memory SOI cell'20067,023,723'Magnetic memory layers thermal pulse transitions'20066,963,098'Thermally operated switch control memory cell'20056,777,730'Antiparallel magnetoresistive memory cells'20046,744,086'Current switched magnetoresistive memory cell'20046,709,696'Stabilization of GMR devices'20046,674,664'Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells'20046,538,921'Circuit selection of magnetic memory cells and related cell structures'20036,535,416'Magnetic memory coincident thermal pulse data storage'20036,455,177'Stabilization of GMR devices'20026,404,191'Read heads in planar monolithic integrated circuit chips'20026,349,053'Spin dependent tunneling memory'20026,340,886'Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface'20026,275,411'Spin dependent tunneling memory'20016,147,900'Spin dependent tunneling memory'20006,072,382'Spin dependent tunneling sensor'20006,021,065'Spin dependent tunneling memory'20005,969,522'Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface'19995,966,322'Giant magnetoresistive effect memory cell'19995,949,707'Giant magnetoresistive effect memory cell'19995,892,708'Magnetoresistive memory using large fraction of memory cell films for data storage'19995,768,180'Magnetoresistive memory using large fractions of memory cell films for data storage'19985,636,159'Magnetoresistive memory using large fractions of memory cell films for data storage'19975,424,236'Method for forming offset magnetoresistive memory structures'19955,420,819'Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage'19955,251,170'Offset magnetoresistive memory structures'19935,060,193'Magnetic state entry assurance'19915,012,444'Opposed field magnetoresistive memory sensing'19914,780,848'Magnetoresistive memory with multi-layer storage cells having layers of limited thickness'19884,088,954'Magnetometer with a miniature transducer and automatic scanning'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978–2014Patents assigned to POHM ARTHUR V (2)· patent assignee history
1978–2019Based in Ames, IA, US· patent location history
1988–1991Patents assigned to HONEYWELL INC (3)· patent assignee history
1993–2002Patents assigned to NONVOLATILE ELECTRONICS INC (13)· patent assignee history
2002–2019Patents assigned to NVE CORP (15)· patent assignee history
2002–2004Patents assigned to SEAGATE TECHNOLOGY LLC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NVE CORP | 15 | 2002–2019 |
| NONVOLATILE ELECTRONICS INC | 13 | 1993–2002 |
| HONEYWELL INC | 3 | 1988–1991 |
| POHM ARTHUR Vself | 2 | 1978–2014 |
| SEAGATE TECHNOLOGY LLC | 2 | 2002–2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ames, IA, US | 35 | 1978–2019 |