Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
Granted 19 Oct 1999 · no office action yet
Current assignee: N.V.E., Inc. · originally Nonvolatile Electronics, Incorporated
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Inventors: Arthur V. Pohm, James M. Daughton · Examiner: Josie Ballato
Life of the patent
3 dated eventsAbstract
A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.
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