LexDanaLexDanabeta
Inventor

Agus Sofian Tjandra

Inventor
San Jose, CA, US

Overview

20→
Patents
2009–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1036%
H01LSemiconductor devices21%
C23CCoating metallic material13%
H01JElectric discharge tubes or discharge lamps13%
F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far as they are of kinds occurring in more than one kind of furnace6%
H05BElectric heating2%
H10DInorganic electric semiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
LOC132%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
11,091,835Side inject nozzle design for processing chamber2021D0924825Chamber inlet202111,049,696Dogbone inlet cone profile for remote plasma oxidation chamber202110,847,337Side inject designs for improved radical concentrations202010,714,333Apparatus and method for selective oxidation at lower temperature using remote plasma source202010,689,757Gas injection apparatus with heating channels202010,636,626Dogbone inlet cone profile for remote plasma oxidation chamber202010,600,641Silicon germanium selective oxidation process202010,260,149Side inject nozzle design for processing chamber201910,020,186Silicon germanium selective oxidation process20189,869,017'H2/O2 side inject to improve process uniformity for low temperature oxidation process'20189,514,968'Methods and apparatus for selective oxidation of a substrate'20169,123,758'Gas injection apparatus and substrate process chamber incorporating same'20158,993,458'Methods and apparatus for selective oxidation of a substrate'20158,888,916'Thermal reactor with improved gas flow distribution'20148,608,853'Thermal reactor with improved gas flow distribution'20138,492,292'Methods of forming oxide layers on substrates'20138,435,906'Methods for forming conformal oxide layers on semiconductor devices'20138,056,500'Thermal reactor with improved gas flow distribution'20117,509,035'Lamp array for thermal processing exhibiting improved radial uniformity'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2021Patents assigned to APPLIED MATERIALS INC (20)· patent assignee history
2009–2021Based in San Jose, CA, US· patent location history
2011–2013Patents assigned to YOKOTA YOSHITAKA (4)· patent assignee history
2011–2013Patents assigned to BEHDJAT MEHRAN (2)· patent assignee history
2011–2013Patents assigned to LERNER ALEXANDER N (2)· patent assignee history
2011–2013Patents assigned to NAVASCA ROBERT (2)· patent assignee history
2020–2021Based in Milpitas, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC202009–2021
YOKOTA YOSHITAKA42011–2013
BEHDJAT MEHRAN22011–2013
LERNER ALEXANDER N22011–2013
NAVASCA ROBERT22011–2013
Locations
LocationPatentsSpan
San Jose, California, US172009–2021
Milpitas, California, US32020–2021