Inventor
Yoshimaro Fujii
Inventor
Hamamatsu, JP
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
B23KSoldering or unsoldering16%
B28DWorking stone or stone-like materials16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01LSemiconductor devices14%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G01TMeasurement of nuclear or x-radiation2%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%
PatentTitleYear
11,101,315Detector, PET system and X-ray CT system202110,879,303Detector, PET system and X-ray CT system202010,840,294Detector, PET system and X-ray CT system202010,622,255Substrate dividing method202010,068,801Substrate dividing method20189,711,405'Substrate dividing method'20179,553,023'Substrate dividing method'20179,548,246'Substrate dividing method'20179,543,256'Substrate dividing method'20179,543,207'Substrate dividing method'20179,385,151'Manufacturing method for edge illuminated type photodiode and semiconductor wafer'20169,293,499'Semiconductor light detecting element having silicon substrate and conductor'20169,287,177'Substrate dividing method'20169,252,056'Substrate dividing method'20169,142,458'Substrate dividing method'20158,993,361'Manufacturing method for edge illuminated type photodiode and semiconductor wafer'20158,889,525'Substrate dividing method'20148,518,801'Substrate dividing method'20138,519,511'Substrate dividing method'20138,518,800'Substrate dividing method'20138,314,013'Semiconductor chip manufacturing method'20128,304,325'Substrate dividing method'20128,268,704'Method for dicing substrate'20127,960,202'Photodiode array having semiconductor substrate and crystal fused regions and method for making thereof'20117,649,236'Semiconductor photodetector and photodetecting device having layers with specific crystal orientations'20107,566,635'Substrate dividing method'20097,336,808'Optical sensor'20086,933,489'Back illuminated photodiode array and method of manufacturing the same'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2021Patents assigned to HAMAMATSU PHOTONICS KK (26)· patent assignee history
2005–2020Based in Hamamatsu, JP· patent location history
2012–2016Patents assigned to FUJII YOSHIMARO (7)· patent assignee history
2012–2013Patents assigned to FUKUMITSU KENSHI (6)· patent assignee history
2012–2013Patents assigned to FUKUYO FUMITSUGU (6)· patent assignee history
2012–2013Patents assigned to UCHIYAMA NAOKI (6)· patent assignee history
2021Based in Iwata, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HAMAMATSU PHOTONICS KK | 26 | 2005–2021 |
| FUJII YOSHIMAROself | 7 | 2012–2016 |
| FUKUMITSU KENSHI | 6 | 2012–2013 |
| FUKUYO FUMITSUGU | 6 | 2012–2013 |
| UCHIYAMA NAOKI | 6 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hamamatsu, JP | 27 | 2005–2020 |
| Iwata, JP | 1 | 2021 |