LexDanaLexDanabeta
Inventor

Yoshitaka Yamamoto

Inventor
Yamatokoriyama, JP

Overview

90→
Patents
1982–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 90 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices21%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein18%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
G02BOptical elements, systems or apparatus4%
G09GArrangements or circuits for control of indicating devices using static means to present variable information4%
G11CStatic stores4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,374,097Semiconductor device20199,960,416Positive electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery and battery module20189,947,800Transistor, method for manufacturing transistor, semiconductor device, and electronic device20189,939,127Illumination device20189,893,194'Method for manufacturing semiconductor device'20189,882,059'Semiconductor device'20189,812,466'Semiconductor device'20179,748,563'Electrode material, electrode plate, lithium ion battery, manufacturing method for electrode material, and manufacturing method for electrode plate'20179,685,560'Transistor, method for manufacturing transistor, semiconductor device, and electronic device'20179,672,873'Semiconductor device'20179,543,295'Semiconductor device'20179,525,023'Semiconductor device'20169,449,853'Method for manufacturing semiconductor device comprising electron trap layer'20169,450,080'Method for manufacturing semiconductor device'20169,401,396'Method for manufacturing semiconductor device and plasma oxidation treatment method'20169,362,411'Semiconductor device and manufacturing method thereof'20169,349,418'Semiconductor device and method for driving the same'20169,331,207'Oxide semiconductor device and manufacturing method therof'20169,310,619'Optical film'20169,312,349'Semiconductor device and method for manufacturing semiconductor device'20169,269,822'Semiconductor device and method for manufacturing semiconductor device'20169,263,705'Successive deposition apparatus and successive deposition method'20169,236,507'Photoelectric conversion element and method for manufacturing same'20169,217,552'Illumination device'20159,196,743'Field effect device with oxide semiconductor layer'20159,159,781'Method for manufacturing semiconductor device and plasma oxidation treatment method'20159,048,453'Light-emitting device'20158,853,697'Semiconductor device'20148,785,926'Semiconductor device'20148,772,752'Semiconductor device'20148,426,295'Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device'20138,344,297'Container for electromagnetic cookers'20137,985,476'Transparent zirconia dispersion and zirconia particle-containing resin composition, composition for sealing light emitting element and light emitting element, hard coat film and optical functional film and optical component, and method for producing zirconia particle-containing resin'20117,608,891'Thin film transistor, circuit apparatus and liquid crystal display'20097,352,002'Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same'20087,164,157'Light emitting device and light emitting device module'20077,138,715'Interconnect, interconnect forming method, thin film transistor, and display device'20067,118,946'Thin film transistor, circuit device and liquid crystal display'20067,102,174'Light emitting device and light emitting device module'20067,087,505'Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same'20067,046,312'Active matrix liquid crystal display and method of fabricating same'20067,023,518'Semiconductor device having a non-conductive material or a weakly conductive material applied to a side edge of a substrate and a method of fabricating the same'20066,987,035'Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus'20066,953,714'Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it'20056,890,849'Interconnect, interconnect forming method, thin film transistor, and display device'20056,828,178'Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it'20046,523,432'Shock-absorbing steering assembly'20036,304,307'Liquid crystal display and method of manufacturing the same'20016,246,454'Active matrix liquid crystal display and method of fabricating same'20016,211,535'Method of manufacturing a semiconductor device'20016,175,351'Image display apparatus and a method for driving the same'20016,162,667'Method for fabricating thin film transistors'20006,118,506'Electro-optical device and method of fabricating same'20005,955,204'Transfer material and transfer product'19995,926,735'Method of forming semiconductor device'19995,844,538'Active matrix-type image display apparatus controlling writing of display data with respect to picture elements'19985,837,569'Semiconductor device and method for producing the same'19985,821,562'Semiconductor device formed within asymetrically-shaped seed crystal region'19985,815,226'Electro-optical device and method of fabricating same'19985,815,231'Liquid crystal display and method of manufacturing the same'19985,790,219'Color liquid-crystal display panel with black-mask overlapping color-filter more on downwardly rubbing side of switching element'19985,764,320'Liquid crystal display device'19985,696,003'Method for fabricating a semiconductor device using a catalyst introduction region'19975,685,190'Expanding mandrel, expanding method and expanding apparatus using the expanding mandrel and heat exchanger with heat exchanging tubes expanded by the expanding method'19975,659,332'Display unit of input integral type'19975,657,100'Optical transmittance adjusting device having a matrix of electrodes each connected to a photoconductor smaller than the electrode'19975,642,214'Optical modulating element and electronic apparatus using it'19975,640,259'Liquid crystal device with the retardation of the liquid crystal layer greater than .lambda./2 and a method for driving the same'19975,627,557'Display apparatus'19975,619,044'Semiconductor device formed with seed crystals on a layer thereof'19975,617,229'Field sequential ferroelectric LCD having a single crystalline layer in which a plurality of circuit elements are formed'19975,592,318'Liquid crystal display apparatus having an inorganic filler between pixel electrodes and a method for producing the same'19975,579,199'Non-volatile memory device and a method for producing the same'19965,566,010'Liquid crystal display with several capacitors for holding information at each pixel'19965,552,840'Three dimensional projection display reflecting divided polarized light on to reflective liquid crystal display elements'19965,550,070'Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same'19965,539,547'Liquid crystal device with plural polymer network films'19965,536,933'Light information device and method for producing the same'19965,535,027'Liquid crystal display device with a photoconductor at each intersection of a linear luminous source and a linear electrode'19965,528,401'Liquid crystal display device having an orientation layer containing liquid crystal with a controlled orientation and method for manufacturing the same'19965,515,316'Non-volatile memory device having a memory medium containing a liquid crystal compound'19965,506,705'Goggle type display apparatus'19965,461,400'Display device'19955,444,651'Non-volatile memory device'19955,426,526'Reflection type single crystal silicon substrate liquid crystal display device and system'19955,341,231'Liquid crystal display device with edge lit lightguide reflecting light to back reflector by total internal reflection'19945,321,536'Liquid crystal operation device and an image system using the same'19944,966,978'Process for separating indole in refined form'19904,712,414'Rolling method of plate-like stock material by edger, and continuous hot rolling mill'19874,329,559'Resistance welder'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2018Patents assigned to SHARP KK (54)· patent assignee history
1994–2018Based in Yamatokoriyama, JP· patent location history
1998–2019Patents assigned to SEMICONDUCTOR ENERGY LAB (32)· patent assignee history
1998–2019Based in Nara, JP· patent location history
2004–2008Patents assigned to ADV LCD TECH DEV CT CO LTD (7)· patent assignee history
2004–2013Based in Yokohama, JP· patent location history
2013–2018Patents assigned to YAMAMOTO YOSHITAKA (12)· patent assignee history
2013–2018Based in Osaka, JP· patent location history
2014–2016Patents assigned to MATSUO TAKUYA (4)· patent assignee history
2017–2018Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK541994–2018
SEMICONDUCTOR ENERGY LAB321998–2019
YAMAMOTO YOSHITAKAself122013–2018
ADV LCD TECH DEV CT CO LTD72004–2008
MATSUO TAKUYA42014–2016
Locations
LocationPatentsSpan
Yamatokoriyama, JP351994–2018
Nara, JP221998–2019
Osaka, JP122013–2018
Yokohama, JP82004–2013
Tokyo, JP22017–2018