Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/bâ‰§2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Claims

9 · 4 independent · depth 2

9 granted claims

›1.independentA method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitr…+1

›3.independentA method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitr…+1

›5.independentA method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitr…+1

›7.independentA plasma oxidation treatment method in which an insulating film or a semiconductor film is exposed to plasma in an oxidizing gas atmosphere containing…+2

Classifications

5 codes

IPC · International Patent Classification

Section H — Electricity

H01L29/66
H01L21/36
H01L29/04
H01L29/786
H01L21/20

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Pendency

3.5 y

1,293 days filing → grant

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1 RCE

Examiner

Thanh Y Tran

art unit 2817 · TC 2800

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20120270383 A1	25 Oct 2012

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