Inventor

Dun-Nian Yaung

Inventor

Taipei, TW

Overview

1999–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 423 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation32%

H01LSemiconductor devices27%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

H10DInorganic electric semiconductor devices7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

H04NPictorial communication, e.g. television3%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%

H10BElectronic memory devices1%

Y02PClimate change mitigation technologies in the production or processing of goods1%

G02BOptical elements, systems or apparatus1%

PatentTitleYear

11,121,159Pixel structure of image sensor having dielectric layer surrounding photo conversion layer and color filter2021 11,114,486Implant isolated devices and method for forming the same2021 11,107,767Structure for standard logic performance improvement having a back-side through-substrate-via2021 11,088,192Metal block and bond pad structure2021 11,088,196Metal reflector grounding for noise reduction in light detector2021 11,069,736Via support structure under pad areas for BSI bondability improvement2021 11,069,731Apparatus for reducing optical cross-talk in image sensors2021 11,063,038Through silicon via design for stacking integrated circuits2021 11,063,080Implant damage free image sensor and method of the same2021 11,063,081Device over photodetector pixel sensor2021 11,062,977Shield structure for backside through substrate vias (TSVs)2021 11,043,522Stacked substrate structure with inter-tier interconnection2021 11,037,885Semiconductor packaging device comprising a shield structure2021 11,037,909Stacked semiconductor structure and method2021 11,024,602Hybrid bond pad structure2021 11,011,567Structure and method for 3D image sensor2021 11,004,880Semiconductor imaging device having improved dark current performance2021 10,991,752Vertically integrated image sensor chips and methods for forming the same2021 10,978,345Interconnect structure for stacked device2021 10,964,692Through silicon via design for stacking integrated circuits2021 10,930,699Method and apparatus for image sensor packaging2021 10,916,502Semiconductor device and manufacturing method thereof2021 10,910,420Semiconductor switching device separate by device isolation2021 10,886,320Mechanisms for forming image-sensor device with epitaxial isolation feature2021 10,879,297Image sensor device and method of forming same2020 10,867,891Ion through-substrate via2020 10,868,071Method for forming semiconductor image sensor2020 10,861,899Interconnect structure for stacked device and method2020 10,861,894Multiple deep trench isolation (MDTI) structure for CMOS image sensor2020 10,833,119Pad structure for front side illuminated image sensor2020 10,825,853Semiconductor image sensor device with deep trench isolations and method for manufacturing the same2020 10,811,398Semiconductor structure and method for manufacturing the same2020 10,804,155Inductor structure for integrated circuit2020 10,797,091Semiconductor imaging device having improved dark current performance2020 10,790,265Semiconductor device structure with back-side layer to reduce leakage2020 10,790,194Inductor structure for integrated circuit2020 10,790,327Semiconductor device structure with a conductive feature passing through a passivation layer2020 10,777,590Method for forming image sensor device structure with doping layer in light-sensing region2020 10,763,292Interconnect apparatus and method for a stacked semiconductor device2020 10,734,428Image sensor device2020 10,734,423Semiconductor switching device separated by device isolation2020 10,727,265Multiple deep trench isolation (MDTI) structure for CMOS image sensor2020 10,727,205Hybrid bonding technology for stacking integrated circuits2020 10,727,164Semiconductor structure and manufacturing method for the same2020 10,692,914Implant damage free image sensor and method of the same2020 10,682,523Interconnect structure and method of forming same2020 10,680,027Stacked semiconductor dies with a conductive feature passing through a passivation layer2020 10,672,819Mechanisms for forming image-sensor device with deep-trench isolation structure2020 10,629,592Through silicon via design for stacking integrated circuits2020 10,629,568Stacked integrated circuits with redistribution lines2020 10,622,394Image sensing device2020 10,566,378Back side illuminated image sensor with reduced sidewall-induced leakage2020 10,566,288Structure for standard logic performance improvement having a back-side through-substrate-via2020 10,566,374Via support structure under pad areas for BSI bondability improvement2020 10,535,696Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips2020 10,535,697Structure and method for 3D Image sensor2020 10,535,706Interconnect structure for stacked device and method2020 10,522,586Apparatus for reducing optical cross-talk in image sensors2019 10,522,525Semiconductor device structure2019 10,515,994Semiconductor devices, methods of manufacturing thereof, and image sensor devices2019 10,515,995Bond pad structure for bonding improvement2019 10,510,7293DIC interconnect apparatus and method2019 10,510,793Uniform-size bonding patterns2019 10,510,791Elevated photodiode with a stacked scheme2019 10,510,789Extra doped region for back-side deep trench isolation2019 10,510,542Gate electrodes with notches and methods for forming the same2019 10,510,592Integrated circuit (IC) structure for high performance and functional density2019 10,510,912Image sensor device and method2019 10,510,730Stacked semiconductor structure and method2019 10,510,790High-k dielectric liners in shallow trench isolations2019 10,510,7923DIC seal ring structure and methods of forming same2019 10,504,784Inductor structure for integrated circuit2019 10,490,580Image sensor pickup region layout2019 10,475,828Image sensor device structure with doping layer in light-sensing region2019 10,475,758Semiconductor device structure and method for forming the same2019 10,475,843Method and apparatus for image sensor packaging2019 10,468,443Pixel structure of image sensor and method of forming same2019 10,468,441Semiconductor switching device separated by device isolation2019 10,468,448Semiconductor image sensor and method for forming the same2019 10,461,109Multiple deep trench isolation (MDTI) structure for CMOS image sensor2019 10,388,642Hybrid bonding with uniform pattern density2019 10,361,233High-k dielectric liners in shallow trench isolations2019 10,304,818Method of manufacturing semiconductor devices having conductive plugs with varying widths2019 10,304,886Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor2019 10,297,631Metal block and bond pad structure2019 10,297,632Method for an image sensor device2019 10,290,671Image sensor device and method of forming same2019 10,283,549Via support structure under pad areas for BSI bondability improvement2019 10,276,622Mechanisms for forming image-sensor device with expitaxial isolation feature2019 10,276,618Extra doped region for back-side deep trench isolation2019 10,276,619Semiconductor device structure with a conductive feature passing through a passivation layer2019 10,269,848Image sensor having enhanced backside illumination quantum efficiency2019 10,269,768Stacked integrated circuits with redistribution lines2019 10,269,863Methods and apparatus for via last through-vias2019 10,269,770Hybrid bond pad structure2019 10,192,918Image sensor including dual isolation and method of making the same2019 10,177,186Pixel structure of image sensor and method of forming same2019 10,177,187Implant damage free image sensor and method of the same2019 10,170,512Uniform-size bonding patterns2019 10,163,956Interconnect apparatus and method2018 10,164,133Image sensor device and method2018 10,163,951Image sensor device2018 10,163,878Semiconductor structure and method for manufacturing the same2018 10,163,758Semiconductor structure and manufacturing method for the same2018 10,157,889Stacked semiconductor structure and method2018 10,157,959Interconnect structure for stacked device and method2018 10,157,8913DIC interconnect apparatus and method2018 10,157,958Vertically integrated image sensor chips and methods for forming the same2018 10,153,316Mechanisms for forming image sensor device with deep-trench isolation structure2018 10,147,752Back-side illuminated (BSI) image sensor with global shutter scheme2018 10,147,682Structure for stacked logic performance improvement2018 10,141,358Semiconductor switching device separated by device isolation2018 10,128,304Isolation for semiconductor devices2018 10,121,812Stacked substrate structure with inter-tier interconnection2018 10,121,821Biased backside illuminated sensor shield structure2018 10,103,287Semiconductor arrangement and formation thereof2018 10,092,768Interconnect structure and method of forming same2018 10,096,515Interconnect structure for stacked device2018 10,096,645Method and apparatus for image sensor packaging2018 10,090,353Semiconductor devices, methods of manufacturing thereof, and image sensor devices2018 10,090,349CMOS image sensor chips with stacked scheme and methods for forming the same2018 10,074,612Method for forming alignment marks and structure of same2018 10,062,721Elevated photodiode with a stacked scheme2018 10,062,728Image sensor device and method2018 10,062,720Deep trench isolation fabrication for BSI image sensor2018 10,056,3533DIC interconnect apparatus and method2018 10,049,981Through via structure, semiconductor device and manufacturing method thereof2018 10,038,025Via support structure under pad areas for BSI bondability improvement2018 10,038,026Bond pad structure for bonding improvement2018 10,014,340Stacked SPAD image sensor2018 10,008,532Implant isolated devices and method for forming the same2018 9,978,805Method for manufacturing image sensor structure having wide contact2018 9,966,405Method and apparatus for image sensor packaging2018 9,966,412Method for reducing optical cross-talk in image sensors2018 9,960,142Hybrid bonding with air-gap structure2018 9,954,022Extra doped region for back-side deep trench isolation2018 9,941,249Multi-wafer stacking by Ox-Ox bonding2018 9,935,147Deep trench isolation structure in image sensor device2018 9,923,011'Semiconductor device structure with stacked semiconductor dies'2018 9,917,123'Method and apparatus for image sensor packaging'2018 9,905,605'Phase detection autofocus techniques'2018 9,905,426'Gate electrodes with notches and methods for forming the same'2018 9,893,111'Full-PDAF (phase detection autofocus) CMOS image sensor structures'2018 9,887,182'3DIC structure and method for hybrid bonding semiconductor wafers'2018 9,887,234'CMOS image sensor and method for forming the same'2018 9,881,884'Semiconductor device structure and method for forming the same'2018 9,875,989Semiconductor device structure2018 9,865,630'Image sensor pickup region layout'2018 9,865,645'Interconnect structure for stacked device and method'2018 9,859,322'Methods and apparatus for glass removal in CMOS image sensors'2018 9,853,082Color filter array and micro-lens structure for imaging system2017 9,847,368Vertically integrated image sensor chips and methods for forming the same2017 9,847,364Image sensor devices and design and manufacturing methods thereof2017 9,837,464Backside structure and methods for BSI image sensors2017 9,818,735'Method of manufacturing a semiconductor device'2017 9,812,409'Seal ring structure with a metal pad'2017 9,812,487'Structure and method for 3D image sensor'2017 9,812,482'Frontside illuminated (FSI) image sensor with a reflector'2017 9,812,483'Back-side illuminated (BSI) image sensor with global shutter scheme'2017 9,806,119'3DIC seal ring structure and methods of forming same'2017 9,786,592'Integrated circuit structure and method of forming the same'2017 9,780,137'Mechanisms for forming image-sensor device with epitaxial isolation feature'2017 9,773,828'Image sensor device and method of forming same'2017 9,768,224'Image sensor including multiple lenses and method of manufacture thereof'2017 9,764,153'Interconnect structure and method of forming same'2017 9,761,629'Image sensor device and method'2017 9,754,925'3DIC interconnect apparatus and method'2017 9,748,304'Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods'2017 9,741,665'Alignment marks in non-STI isolation formation and methods of forming the same'2017 9,728,570'Deep trench isolation fabrication for BSI image sensor'2017 9,728,521'Hybrid bond using a copper alloy for yield improvement'2017 9,722,109'Image sensor device and method'2017 9,716,078'Stacked semicondcutor structure and method'2017 9,711,562'Apparatus and method for reducing optical cross-talk in image sensors'2017 9,704,827'Hybrid bond pad structure'2017 9,704,910'Semiconductor switching device separated by device isolation'2017 9,699,897'Pad structure'2017 9,673,245'Implant isolated devices and method for forming the same'2017 9,673,246'Dual metal for a backside package of backside illuminated image sensor'2017 9,666,566'3DIC structure and method for hybrid bonding semiconductor wafers'2017 9,666,624'Mechanisms for forming image-sensor device with deep-trench isolation structure'2017 9,666,630'Semiconductor devices, methods of manufacturing thereof, and image sensor devices'2017 9,653,508'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'2017 9,640,582'Method of manufacturing image sensor having enhanced backside illumination quantum efficiency'2017 9,627,326'Method for forming alignment marks and structure of same'2017 9,627,430'Method and apparatus for low resistance image sensor contact'2017 9,620,548'Image sensor with wide contact'2017 9,614,000'Biased backside illuminated sensor shield structure'2017 9,613,996'Backside structure and methods for BSI image sensors'2017 9,576,999'Backside structure and methods for BSI image sensors'2017 9,570,503'Ridge structure for back side illuminated image sensor'2017 9,570,497'Back side illuminated image sensor having isolated bonding pads'2017 9,559,244'CMOS image sensors and methods for forming the same'2017 9,553,020'Interconnect structure for connecting dies and methods of forming the same'2017 9,543,257'3DIC interconnect devices and methods of forming same'2017 9,536,810'Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes'2017 9,536,777'Interconnect apparatus and method'2017 9,530,811'Elevated photodiode with a stacked scheme'2016 9,525,003'Structure and method for 3D image sensor'2016 9,520,433'Method of fabricating deep trench isolation structure in image sensor and device thereof'2016 9,473,753'Apparatus and method for reducing optical cross-talk in image sensors'2016 9,455,158'3DIC interconnect devices and methods of forming same'2016 9,455,288'Image sensor structure to reduce cross-talk and improve quantum efficiency'2016 9,449,914'Stacked integrated circuits with redistribution lines'2016 9,443,836'Forming pixel units of image sensors through bonding two chips'2016 9,437,578'Stacked IC control through the use of homogenous region'2016 9,425,150'Multi-via interconnect structure and method of manufacture'2016 9,412,719'3DIC interconnect apparatus and method'2016 9,412,725'Method and apparatus for image sensor packaging'2016 9,406,711'Apparatus and method for backside illuminated image sensors'2016 9,406,715'Image sensor device'2016 9,406,712'Interconnect structure for connecting dies and methods of forming the same'2016 9,401,380'Backside structure and methods for BSI image sensors'2016 9,391,109'Uniform-size bonding patterns'2016 9,391,101'Image sensor pickup region layout'2016 9,391,114'Semiconductor devices, methods of manufacturing thereof, and image sensor devices'2016 9,379,093'Method and apparatus for image sensor packaging'2016 9,373,657'System and method for fabricating a 3D image sensor structure'2016 9,368,545'Elevated photodiodes with crosstalk isolation'2016 9,362,329'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'2016 9,355,888'Implant isolated devices and method for forming the same'2016 9,355,964'Method for forming alignment marks and structure of same'2016 9,356,066'Interconnect structure for stacked device and method'2016 9,356,069'Photo diode and method of forming the same'2016 9,356,058'Backside structure for BSI image sensor'2016 9,337,235'Method and apparatus for image sensor packaging'2016 9,324,761'Method of making image sensor devices having a concave reflective shield'2016 9,318,528'Image sensor device and method'2016 9,318,526'Mechanisms for forming image-sensor device with deep-trench isolation structure'2016 9,318,640'Method and apparatus for image sensor packaging'2016 9,318,370'High-k dielectric liners in shallow trench isolations'2016 9,312,294'Semiconductor devices, methods of manufacturing thereof, and image sensor devices'2016 9,312,229'Hybrid bonding with air-gap structure'2016 9,305,966'Backside structure and method for BSI image sensors'2016 9,305,822'Alignment marks in non-STI isolation formation and methods of forming the same'2016 9,299,736'Hybrid bonding with uniform pattern density'2016 9,293,502'Semiconductor switching device separated by device isolation'2016 9,287,312'Imaging sensor structure and method'2016 9,287,310'Methods and apparatus for glass removal in CMOS image sensors'2016 9,281,334'Pickup device structure within a device isolation region'2016 9,263,272'Gate electrodes with notches and methods for forming the same'2016 9,257,326'Method of making backside illuminated image sensors'2016 9,257,414'Stacked semiconductor structure and method'2016 9,245,912'Method and apparatus for low resistance image sensor contact'2016 9,230,941'Bonding structure for stacked semiconductor devices'2016 9,224,770'Image sensor device and method'2015 9,196,547'Dual shallow trench isolation and related applications'2015 9,190,345'Semiconductor devices and methods of manufacture thereof'2015 9,184,207'Pad structures formed in double openings in dielectric layers'2015 9,177,986'Isolation for semiconductor devices'2015 9,165,970'Back side illuminated image sensor having isolated bonding pads'2015 9,159,852'Image sensor device and method'2015 9,153,565'Image sensors with a high fill-factor'2015 9,147,702'Image sensor for mitigating dark current'2015 9,147,703'CMOS image sensor structure'2015 9,142,586'Pad design for backside illuminated image sensor'2015 9,142,690'Semiconductor device having a bonding pad and shield structure and method of manufacturing the same'2015 9,136,298'Mechanisms for forming image-sensor device with deep-trench isolation structure'2015 9,136,302'Apparatus for vertically integrated backside illuminated image sensors'2015 9,123,615'Vertically integrated image sensor chips and methods for forming the same'2015 9,123,617'Elevated photodiode with a stacked scheme'2015 9,117,879'Semiconductor device and manufacturing method thereof'2015 9,076,715'Interconnect structure for connecting dies and methods of forming the same'2015 9,076,708'CMOS image sensors and methods for forming the same'2015 9,064,986'Photo diode and method of forming the same'2015 9,064,989'Photo diode and method of forming the same'2015 9,059,061'Structure and method for 3D image sensor'2015 9,048,162'CMOS image sensors and methods for forming the same'2015 9,041,841'Image sensor having enhanced backside illumination quantum efficiency'2015 9,040,891'Image device and methods of forming the same'2015 9,041,206'Interconnect structure and method'2015 9,035,445'Seal ring structure with a metal pad'2015 9,029,183'Method and apparatus for image sensor packaging'2015 9,013,022'Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips'2015 8,987,855'Pad structures formed in double openings in dielectric layers'2015 8,987,113'Image sensor including multiple lenses and method of manufacture thereof'2015 8,981,510'Ridge structure for back side illuminated image sensor'2015 8,969,991'Backside structure and methods for BSI image sensors'2015 8,962,375'Method of making a reflective shield'2015 8,957,358'CMOS image sensor chips with stacked scheme and methods for forming the same'2015 8,952,497'Scribe lines in wafers'2015 8,952,474'Method of fabricating backside-illuminated image sensor'2015 8,946,847'Backside illuminated image sensors and method of making the same'2015 8,946,849'BSI image sensor chips with separated color filters and methods for forming the same'2015 8,946,784'Method and apparatus for image sensor packaging'2015 8,941,204'Apparatus and method for reducing cross talk in image sensors'2015 8,933,527'Elevated photodiodes with crosstalk isolation'2015 8,900,966'Alignment for backside illumination sensor'2014 8,895,349'Backside illuminated image sensor having capacitor on pixel region'2014 8,883,544'Method of forming an image device'2014 8,878,242'Pickup device structure within a device isolation region'2014 8,878,325'Elevated photodiode with a stacked scheme'2014 8,816,457'Sensor structure for optical performance enhancement'2014 8,810,700'Front side implanted guard ring structure for backside'2014 8,809,098'Back side defect reduction for back side illuminated image sensor'2014 8,790,954'Method of making wafer structure for backside illuminated color image sensor'2014 8,791,541'Backside-illuminated image sensor having a supporting substrate'2014 8,785,984'Method for making multi-step photodiode junction structure for backside illuminated sensor'2014 8,766,387'Vertically integrated image sensor chips and methods for forming the same'2014 8,736,006'Backside structure for a BSI image sensor device'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (205)· patent assignee history

1999–2021Based in Taipei, TW· patent location history

2007–2019Based in Hsinchu, TW· patent location history

2012–2016Patents assigned to YAUNG DUN-NIAN (69)· patent assignee history

2012–2016Patents assigned to LIU JEN-CHENG (57)· patent assignee history

2012–2016Patents assigned to WANG WEN-DE (26)· patent assignee history

2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (215)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	215	2015–2021
TAIWAN SEMICONDUCTOR MFG	205	1999–2016
YAUNG DUN-NIANself	69	2012–2016
LIU JEN-CHENG	57	2012–2016
WANG WEN-DE	26	2012–2016

Locations

Location	Patents	Span
Taipei, TW	418	1999–2021
Hsinchu, TW	5	2007–2019