Inventor

Eric Shero

Inventor

Phoenix, AZ, US

Overview

1992–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material27%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%

H01LSemiconductor devices11%

H10DInorganic electric semiconductor devices10%

H01JElectric discharge tubes or discharge lamps4%

C30BSingle-crystal growth3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

B82YSpecific uses or applications of nanostructures2%

Y10TTechnical subjects covered by former us classification2%

C01BNon-metallic elements2%

PatentTitleYear

11,114,294Structure including SiOC layer and method of forming same2021 10,892,156Methods for forming a silicon nitride film on a substrate and related semiconductor device structures2021 10,876,205Reactant vaporizer and related systems and methods2020 10,875,774Tritertbutyl aluminum reactants for vapor deposition2020 10,865,475Deposition of metal borides and silicides2020 10,858,737Showerhead assembly and components thereof2020 10,844,486Semiconductor processing reactor and components thereof2020 10,832,903Process feed management for semiconductor substrate processing2020 10,714,315Semiconductor reaction chamber showerhead2020 10,683,571Gas supply manifold and method of supplying gases to chamber using same2020 10,636,889Titanium aluminum and tantalum aluminum thin films2020 10,556,799Tritertbutyl aluminum reactants for vapor deposition2020 10,529,542Cross-flow reactor and method2020 10,480,072Semiconductor processing reactor and components thereof2019 10,468,291Reaction system for growing a thin film2019 10,458,018Structures including metal carbide material, devices including the structures, and methods of forming same2019 10,370,761Pulsed valve manifold for atomic layer deposition2019 10,358,599Selective etching of reactor surfaces2019 10,276,355Multi-zone reactor, system including the reactor, and method of using the same2019 10,266,946Pulsed valve manifold for atomic layer deposition2019 10,118,828Tritertbutyl aluminum reactants for vapor deposition2018 10,087,522Deposition of metal borides2018 10,002,936Titanium aluminum and tantalum aluminum thin films2018 9,892,908'Process feed management for semiconductor substrate processing'2018 9,873,942Methods of vapor deposition with multiple vapor sources2018 9,593,416'Precursor delivery system'2017 9,583,348'Silane and borane treatments for titanium carbide films'2017 9,574,268'Pulsed valve manifold for atomic layer deposition'2017 9,481,937'Selective etching of reactor surfaces'2016 9,394,608'Semiconductor processing reactor and components thereof'2016 9,388,492'Vapor flow control apparatus for atomic layer deposition'2016 9,359,672'Reaction system for growing a thin film'2016 9,340,874'Chamber sealing member'2016 9,238,865'Multiple vapor sources for vapor deposition'2016 9,236,247'Silane and borane treatments for titanium carbide films'2016 9,228,259'Method for treatment of deposition reactor'2016 9,202,727'Susceptor heater shim'2015 9,167,625'Radiation shielding for a substrate holder'2015 9,139,906'Doping with ALD technology'2015 9,117,773'High concentration water pulses for atomic layer deposition'2015 9,111,749'Silane or borane treatment of metal thin films'2015 9,017,481'Process feed management for semiconductor substrate processing'2015 9,005,539'Chamber sealing member'2015 8,986,456'Precursor delivery system'2015 8,894,870'Multi-step method and apparatus for etching compounds containing a metal'2014 8,883,270'Systems and methods for thin-film deposition of metal oxides using excited nitrogenâ€”oxygen species'2014 8,877,655'Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species'2014 8,846,550'Silane or borane treatment of metal thin films'2014 8,841,182'Silane and borane treatments for titanium carbide films'2014 8,759,226'Method for minimizing contamination in semiconductor processing chamber'2014 8,563,444'ALD of metal silicate films'2013 8,309,173'System for controlling the sublimation of reactants'2012 8,293,658'Reactive site deactivation against vapor deposition'2012 8,287,648'Method and apparatus for minimizing contamination in semiconductor processing chamber'2012 8,216,380'Gap maintenance for opening to process chamber'2012 8,211,230'Reaction system for growing a thin film'2012 8,137,462'Precursor delivery system'2012 7,972,977'ALD of metal silicate films'2011 7,914,847'Reactor surface passivation through chemical deactivation'2011 7,851,019'Method for controlling the sublimation of reactants'2010 7,799,135'Reactor surface passivation through chemical deactivation'2010 7,795,160'ALD of metal silicate films'2010 7,790,556'Integration of high k gate dielectric'2010 D0614153'Reactant source vessel'2010 7,601,225'System for controlling the sublimation of reactants'2009 7,569,284'Incorporation of nitrogen into high k dielectric film'2009 7,476,627'Surface preparation prior to deposition'2009 7,405,453'Incorporation of nitrogen into high k dielectric film'2008 7,122,085'Sublimation bed employing carrier gas guidance structures'2006 7,118,779'Reactor surface passivation through chemical deactivation'2006 7,056,835'Surface preparation prior to deposition'2006 7,026,219'Integration of high k gate dielectric'2006 7,020,981'Reaction system for growing a thin film'2006 7,022,613'Reduced cross-contamination between chambers in a semiconductor processing tool'2006 6,960,537'Incorporation of nitrogen into high k dielectric film'2005 6,958,277'Surface preparation prior to deposition'2005 6,806,145'Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer'2004 6,797,617'Reduced cross-contamination between chambers in a semiconductor processing tool'2004 6,613,695'Surface preparation prior to deposition'2003 6,465,761'Heat lamps for zone heating'2002 5,145,924'Free radical polymerization of styrene monomer'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992Based in Scottsvale, AZ, US· patent location history

2002–2019Patents assigned to ASM INC (43)· patent assignee history

2002–2021Based in Phoenix, AZ, US· patent location history

2012–2017Patents assigned to SHERO ERIC (18)· patent assignee history

2012–2016Patents assigned to VERGHESE MOHITH (7)· patent assignee history

2012–2017Patents assigned to FONDURULIA KYLE (6)· patent assignee history

2014–2021Patents assigned to ASM IP HOLDING BV (31)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM INC	43	2002–2019
ASM IP HOLDING BV	31	2014–2021
SHERO ERICself	18	2012–2017
VERGHESE MOHITH	7	2012–2016
FONDURULIA KYLE	6	2012–2017

Locations

Location	Patents	Span
Phoenix, AZ, US	80	2002–2021
Scottsvale, AZ, US	1	1992