Inventor

Ganming Qin

Inventor

Chandler, AZ, US

Overview

24→

Patents

2002–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices42%

H01LSemiconductor devices35%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

G06FElectric digital data processing2%

H01JElectric discharge tubes or discharge lamps2%

PatentTitleYear

10,811,502Method of manufacture of super-junction power semiconductor device2020 10,672,902Bidirectional power MOSFET structure with a cathode short structure2020 10,644,146Vertical bi-directional switches and method for making same2020 10,431,678Termination design for trench superjunction power MOSFET2019 10,297,684Bidirectional power MOSFET structure with a cathode short structure2019 10,153,357Superjunction power semiconductor device and method for forming2018 10,103,257Termination design for trench superjunction power MOSFET2018 10,074,743Trench MOSFET shield poly contact2018 9,680,003'Trench MOSFET shield poly contact'2017 9,553,184'Edge termination for trench gate FET'2017 9,515,178'Shielded trench semiconductor devices and related fabrication methods'2016 9,419,128'Bidirectional trench FET with gate-based resurf'2016 9,397,213'Trench gate FET with self-aligned source contact'2016 9,368,620'Trench gate FET with self-aligned source contact'2016 9,362,394'Power device termination structures and methods'2016 9,324,800'Bidirectional MOSFET with suppressed bipolar snapback and method of manufacture'2016 9,293,535'Power MOSFET current sense structure and method'2016 9,178,027'Bidirectional trench FET with gate-based resurf'2015 8,895,394'Trench FET with source recess etch'2014 8,143,126'Method for forming a vertical MOS transistor'2012 8,030,153'High voltage TMOS semiconductor device with low gate charge structure and method of making'2011 7,602,014'Superjunction power MOSFET'2009 7,378,317'Superjunction power MOSFET'2008 6,424,083'Field emission device having an improved ballast resistor'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Based in Chandler, AZ, US· patent location history

2008–2017Patents assigned to FREESCALE SEMICONDUCTOR INC (14)· patent assignee history

2012–2016Patents assigned to QIN GANMING (6)· patent assignee history

2012–2016Patents assigned to KU PON SUNG (5)· patent assignee history

2012–2016Patents assigned to DE FRESART EDOUARD D (3)· patent assignee history

2017–2020Patents assigned to NXP USA INC (10)· patent assignee history

2018–2019Based in Austin, TX, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FREESCALE SEMICONDUCTOR INC	14	2008–2017
NXP USA INC	10	2017–2020
QIN GANMINGself	6	2012–2016
KU PON SUNG	5	2012–2016
DE FRESART EDOUARD D	3	2012–2016

Locations

Location	Patents	Span
Chandler, AZ, US	22	2002–2020
Austin, Texas, US	2	2018–2019