Inventor
Yoshihiro Kusuyama
Inventor
Kanagawa, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H01LSemiconductor devices4%
H10KOrganic electric solid-state devices3%
H01JElectric discharge tubes or discharge lamps1%
PatentTitleYear
9,330,940'Semiconductor device and manufacturing method thereof'20169,142,574'Semiconductor device and fabrication method thereof'20158,921,169'Semiconductor device and fabrication method thereof'20148,735,889'Semiconductor device and manufacturing method thereof'20148,461,596'Semiconductor device including semiconductor film with outer end having tapered shape'20138,440,484'Semiconductor device and fabrication method thereof'20138,207,536'Semiconductor device and fabrication method thereof'20128,093,591'Semiconductor device and manufacturing method thereof'20128,053,339'Semiconductor device and manufacturing method thereof'20118,053,781'Semiconductor device having thin film transistor'20117,952,152'Semiconductor device and fabrication method thereof'20117,884,369'Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same'20117,875,886'Semiconductor device having a thin film transistor'20117,804,142'Semiconductor device and fabrication method thereof'20107,714,329'Semiconductor device having thin film transistor'20107,633,085'Semiconductor device and manufacturing method thereof'20097,420,209'Semiconductor device'20087,405,115'Semiconductor device and manufacturing method thereof'20087,238,600'Semiconductor device and fabrication method thereof'20077,169,710'Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same'20077,164,171'Semiconductor device and fabrication method thereof'20077,071,037'Semiconductor device and manufacturing method thereof'20066,984,550'Semiconductor device and manufacturing method thereof'20066,900,462'Semiconductor device and manufacturing method thereof'20056,686,228'Semiconductor device and manufacturing method thereof'20046,657,260'Thin film transistors having source wiring and terminal portion made of the same material as the gate electrodes'20036,642,089'Semiconductor device and fabrication method thereof'20036,475,836'Semiconductor device and manufacturing method thereof'20026,372,523'Etching method and etching device'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2016Patents assigned to SEMICONDUCTOR ENERGY LAB (28)· patent assignee history
2002–2016Based in Kanagawa, JP· patent location history
2007–2011Based in Atsugi, JP· patent location history
2008–2013Based in Tochigi, JP· patent location history
2012–2014Patents assigned to KUSUYAMA YOSHIHIRO (5)· patent assignee history
2012–2014Patents assigned to SUZAWA HIDEOMI (5)· patent assignee history
2012–2014Patents assigned to YAMAZAKI SHUNPEI (4)· patent assignee history
2012–2014Patents assigned to ONO KOJI (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 28 | 2002–2016 |
| KUSUYAMA YOSHIHIROself | 5 | 2012–2014 |
| SUZAWA HIDEOMI | 5 | 2012–2014 |
| YAMAZAKI SHUNPEI | 4 | 2012–2014 |
| ONO KOJI | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 22 | 2002–2016 |
| Tochigi, JP | 5 | 2008–2013 |
| Atsugi, JP | 2 | 2007–2011 |