A method for making an interposer comprising:nforming a conductive layer contacting a replicate such that a shape of a surface of the conductive layer conforms to a shape of the contacted portion of the replicate, the conductive layer having a base and a plurality of conductive posts projecting away from the base, each conductive post having a post end opposite the base;attaching a support layer to the replicate to provide support to the replicate during at least one processing step;forming a dielectric layer covering the base and separating adjacent ones of the posts from each other; andremoving a portion of the conductive layer to insulate at least one post from at least one other post, a remaining portion of the conductive layer forming at least one via;forming a second conductive layer contacting the replicate such that a shape of a surface of the second conductive layer conforms to a shape of the contacted portion of the replicate, the second conductive layer having a second base and a plurality of second conductive posts projecting away from the second base, each second conductive post having a second post end opposite the second base, the second conductive layer contacting the replicate on a side of the replicate opposite the conductive layer;removing the replicate from the support layer;forming a first conductive coating over at least a portion of the conductive posts of the conductive layer; andforming a second conductive coating onto the base of the conductive layer,wherein the first and second conductive coatings are electrically connected through the conductive layer.
›2.↳ 1The method of claim 1, wherein forming the conductive layer includes electroless plating of a seed coating onto the replicate.d2
The method of claim 1, wherein forming the conductive layer includes electroless plating of a seed coating onto the replicate.
›3.↳ 1The method of claim 1, further comprising forming one or both of a barrier layer and an electroless adhesion layer onto the replicate prior to forming…d2
The method of claim 1, further comprising forming one or both of a barrier layer and an electroless adhesion layer onto the replicate prior to forming the conductive layer.
›4.↳ 1The method of claim 1, wherein forming the conductive layer comprises:nforming a seed coating onto the replicate; andelectrolytic plating of a conduct…d2
The method of claim 1, wherein forming the conductive layer comprises:nforming a seed coating onto the replicate; andelectrolytic plating of a conductive material onto the seed coating.
›5.↳ 1The method of claim 1, wherein the dielectric layer is one of a permanent resist coating, a mold, lamination, and a conformal coating.d2+1
The method of claim 1, wherein the dielectric layer is one of a permanent resist coating, a mold, lamination, and a conformal coating.
›6.↳ 5The method of claim 5, wherein the dielectric layer is a conformal coating and a heat conducting layer is formed on the conformal coating.d3
The method of claim 5, wherein the dielectric layer is a conformal coating and a heat conducting layer is formed on the conformal coating.
›7.↳ 1The method of claim 1, further comprising planarizing at least some of the portion of the dielectric layer covering the conductive layer to form a fla…d2+1
The method of claim 1, further comprising planarizing at least some of the portion of the dielectric layer covering the conductive layer to form a flat surface of the dielectric layer prior to forming the first conductive coating.
›8.↳ 7The method of claim 7, wherein planarizing is performed by milling.d3
The method of claim 7, wherein planarizing is performed by milling.
›9.↳ 1The method of claim 1, wherein the dielectric layer is formed to cover at least some of the plurality of conductive posts of the conductive layer, the…d2
The method of claim 1, wherein the dielectric layer is formed to cover at least some of the plurality of conductive posts of the conductive layer, the method further comprising thinning portions of the dielectric layer to remove unwanted materials and to expose the post ends of the at least some conductive posts.
›10.↳ 1The method of claim 1, further comprisingnremoving a portion of the conductive posts to expose a void within the conductive posts; andfilling the void…d2
The method of claim 1, further comprisingnremoving a portion of the conductive posts to expose a void within the conductive posts; andfilling the void to provide rigidity to the conductive post.
›11.↳ 1The method of claim 1, further comprising electrically coupling a first microelectronic element to a second microelectronic element through at least o…d2
The method of claim 1, further comprising electrically coupling a first microelectronic element to a second microelectronic element through at least one of the conductive posts.
›12.↳ 1The method of claim 1, wherein forming the first and second conductive coatings comprises forming first and second redistribution structures, respecti…d2
The method of claim 1, wherein forming the first and second conductive coatings comprises forming first and second redistribution structures, respectively, at oppositely-facing surfaces of the dielectric layer, the first and second redistribution structures having respective patterns of traces and redistribution dielectric layers, the traces of the first and second redistribution layers being electrically coupled through the conductive layer.
›13.↳ 1The method of claim 1, further comprising the steps of:nforming at least one first joining element on the post ends of at least a respective one of th…d2+1
The method of claim 1, further comprising the steps of:nforming at least one first joining element on the post ends of at least a respective one of the conductive posts, wherein the at one first joining element and the respective at least one of the conductive posts are electrically connected;attaching a first surface of at least a first microelectronic element to the at least one first joining element, the first microelectronic element being electrically connected to the at least one first joining element; andattaching a second surface of the at least first microelectronic element to a support element.
›14.↳ 13The method of claim 13, further comprising removing the replicate from the mold, wherein the second surface of the at least first microelectronic elem…d3
The method of claim 13, further comprising removing the replicate from the mold, wherein the second surface of the at least first microelectronic element remains attached to the support element after removing the replicate from the mold.
›15.↳ 1The method of claim 1 further comprising, prior to forming the conductive layer,nforming a seed coating onto a substrate;forming a mold dielectric lay…d2
The method of claim 1 further comprising, prior to forming the conductive layer,nforming a seed coating onto a substrate;forming a mold dielectric layer onto the seed coating, the mold dielectric layer including a plurality of holes therethrough;forming the plurality of extensions within respective ones of the plurality of holes of the mold dielectric layer;removing the mold dielectric layer from the seed coating to form a mold, the mold including the extensions; andforming the replicate on the extensions of the mold.
