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Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

Granted 2 Feb 2016 · 4 office actions

Current assignee: FUJIFILM Corporation · originally Fujifilm Holdings Corporation

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Attorney: Attorney · Log in to unlock

Inventors: Shinichi Kanna, Hideaki Tsubaki · Examiner: Anca Eoff · AU 1722 · TC 1700

Application
14/549,164
filed 20 Nov 2014
Publication
US 20150079522
published 19 Mar 2015
Patent· this page
US 9,250,530
granted 2 Feb 2016
5
Claims
1 independent
100
File wrapper
transactions
2034
20-year term
term adjustment not held
none
Litigation
checked
5
Classifications
G03F7/40, G03F7/039
310
Citations
310 cites · 0 cited by

Life of the patent

9 dated events
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Abstract

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Claims

5 · 1 independent · depth 2
12345
5 granted claims

Classifications

5 codes
IPC · International Patent Classification
Section G — Physics
  • G03F7/40
  • G03F7/039
  • G03F7/20
  • G03F7/30
  • G03F7/32

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Pendency
1.2 y
439 days filing → grant
Office actions
2
non-final + final
Responses
1
1 RCE
Examiner
Anca Eoff
art unit 1722 · TC 1700
Law firm
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Citations: 310 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20150079522 A119 Mar 2015

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