There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount Î”Vth within a range of Â±3 V in PDS and NBIS) and field-effect mobility of 5 cm 2 /Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Znâ€”Snâ€”O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Claims

8 · 2 independent · depth 4

8 granted claims

›1.independentAn oxide semiconductor target formed by sintering a Znâ€”Snâ€”O oxide semiconductor material comprising zinc oxide and tin oxide as a main ingredient,…+6

›2.↳ 1The oxide semiconductor target according to claim 1, wherein the addition amount of the W is within a compositional range of 0.07 to 2.0 at %.d2

›3.↳ 1The oxide semiconductor target according to claim 1, wherein the relative density of the sintered oxide semiconductor material is 95% or more.d2

›4.↳ 1The oxide semiconductor target according to claim 1,nwherein at least one metal element of Ta (tantalum) and Hf (hafnium) is also added to the oxide s…d2+3

›8.independentAn oxide semiconductor material having an insulating property and constituting a protective film in a semiconductor device,nwherein the oxide semicond…

Classifications

7 codes

IPC · International Patent Classification

Section C — Chemistry; metallurgy

C23C14/08
C23C14/34

Section H — Electricity

H01L21/28
H01L29/786
H01L27/32
H01L21/02
H01L29/10

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Calvin Lee

art unit 2896 · TC 2800

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Type	Document	Date
related publication	US 20140042431 A1	13 Feb 2014

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