Vacuum storage method and device for crystalline material
Granted 15 Dec 2015 · no office action yet
Current assignee: MITSUBISHI MATERIALS TECHNO CORPORATION · originally Mitsubishi Electric Corporation
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Attorney: Attorney · Log in to unlock
Inventors: Jiro Kajiwara, Hirotsugu Sanada, Yukichi Horioka · Examiner: Stephen M Gravini · AU 3744 · TC 3700
Life of the patent
3 dated eventsAbstract
The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10 −4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
Claims
12 · 2 independent · depth 3Classifications
8 codes- B22F3/00
- C30B15/10
- C30B11/00
- C30B15/00
- C30B29/06
- C30B29/42
- F26B3/18
- F26B13/10
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20140223763 A1 | 14 Aug 2014 |
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