USPatentGranted
B2

Vacuum storage method and device for crystalline material

Granted 15 Dec 2015 · no office action yet

Current assignee: MITSUBISHI MATERIALS TECHNO CORPORATION · originally Mitsubishi Electric Corporation

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Inventors: Jiro Kajiwara, Hirotsugu Sanada, Yukichi Horioka · Examiner: Stephen M Gravini · AU 3744 · TC 3700

Life of the patent

3 dated events
⤢ drag to zoomJul 2011Jan 2012Jul 2012Jan 2013Jul 2013Jan 2014Jul 2014Jan 2015Jul 2015Jan 2016Prosecution
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Abstract

The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10 −4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.

Claims

12 · 2 independent · depth 3
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12 granted claims

Classifications

8 codes
IPC · International Patent Classification
Section B — Performing operations; transporting
  • B22F3/00
Section C — Chemistry; metallurgy
  • C30B15/10
  • C30B11/00
  • C30B15/00
  • C30B29/06
  • C30B29/42
Section F — Mechanical engineering; lighting; heating; weapons
  • F26B3/18
  • F26B13/10

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Pendency
4.3 y
1,573 days filing → grant
Office actions
0
none on record
Responses
1
no RCE
Examiner
Stephen M Gravini
art unit 3744 · TC 3700
Citations: 35 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20140223763 A114 Aug 2014

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Citations

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