A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.

Claims

12 · 2 independent · depth 4

12 granted claims

›1.independentA method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate, comprising:nloading the …+10

›2.↳ 1The method of claim 1, wherein the loading, the accommodating, and the vapor-diffusing are performed on the target substrate and the dummy substrate i…d2

›3.↳ 1The method of claim 1, wherein after vapor-diffusing the impurities, an oxygen gas purge is performed.d2

›4.↳ 1The method of claim 1, wherein after vapor-diffusing the impurities, performing the method is completed without performing oxygen gas purge.d2

›5.↳ 1The method of claim 1, wherein the oxide is selected from any one of silicon oxide and metal oxide.d2

›6.↳ 1The method of claim 1, wherein the nitride includes silicon nitride.d2

›7.↳ 1The method of claim 1, wherein the dummy substrate is made of quartz.d2

›8.↳ 1The method of claim 1, wherein the diffusion region of the target substrate is made of a semiconductor material, and in vapor-diffusing the impurities…d2+2

›11.↳ 1The method of claim 1, wherein boron trichloride gas is used in vapor-diffusing the impurities in a form of an impurity source gas.d2

›12.independentA method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate, comprising:nloading the …

Classifications

3 codes

IPC · International Patent Classification

Section H — Electricity

H01L21/67
H01L21/223
H01L21/22

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Pendency

2.2 y

819 days filing → grant

Office actions

non-final + final

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2 RCE

Examiner

Pamela E Perkins

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Citations: 9 back · 0 forward

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20140030879 A1	30 Jan 2014

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