Display device and method of fabricating the display device
Granted 22 Sep 2015 · no office action yet
Current assignee: Semiconductor Energy Laboratory Co., Ltd. · originally Semiconductor Energy Laboratory
Law firm: Law firm · Log in to unlock
Attorney: Attorney · Log in to unlock
Inventors: Hideomi Suzawa, Shunpei Yamazaki, Ichiro Uehara · Examiner: Joseph L Williams · AU 2889 · TC 2800
Life of the patent
13 dated eventsAbstract
In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented.
Claims
40 · 4 independent · depth 2Classifications
3 codes- H01L27/32
- H05B33/00
- H01L27/12
Claim changes
SoonSee which claims were amended, added or cancelled during examination, with every added and removed word marked.
The published claims of this patent are not paired with the granted ones in what we hold.
File wrapper
See the full prosecution history — every USPTO and applicant action on this file, in order.
Log in to unlockTerm & fees
See the term timeline — pendency span, in-force span, the maintenance fees paid and both computed expiry dates.
Log in to unlockPriority chain
1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20140183576 A1 | 3 Jul 2014 |
Validity challenges
See the validity challenges on record — reexaminations, IPRs and PGRs, with their institution decisions and outcomes.
Log in to unlockCitations
See every patent this one cites and every patent that cites it back — publication, assignee, and how each one was found.
Log in to unlock